TI TAS5152DKDG4

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SLES127A − FEBRUARY 2005 − REVISED NOVEMBER 2005
TM
FEATURES
D 2×125 W at 10% THD+N Into 4-W BTL
D 2×98 W at 10% THD+N Into 6-W BTL
D 2×76 W at 10% THD+N Into 8-W BTL
D 4×45 W at 10% THD+N Into 3-W SE
D 4×35 W at 10% THD+N Into 4-W SE
D 1×192 W at 10% THD+N Into 3-W PBTL
D 1×240 W at 10% THD+N Into 2-W PBTL
D >100-dB SNR (A-Weighted)
D <0.1% THD+N at 1 W
D Thermally Enhanced Package Option:
− DKD (36-Pin PSOP3)
D High-Efficiency Power Stage (>90%) With
140-mW Output MOSFETs
D Power-On Reset for Protection on Power Up
Without Any Power-Supply Sequencing
D Integrated Self-Protection Circuits Including:
−
−
−
−
Undervoltage
Overtemperature
Overload
Short Circuit
A low-cost, high-fidelity audio system can be built using
a TI chipset, comprised of a modulator (e.g., TAS5508)
and the TAS5152. This system only requires a simple
passive LC demodulation filter to deliver high-quality,
high-efficiency audio amplification with proven EMI
compliance. This device requires two power supplies,
12 V for GVDD and VDD, and 35 V for PVDD. The
TAS5152 does not require power-up sequencing due to
internal power-on reset. The efficiency of this digital
amplifier is greater than 90% into 6 Ω, which enables the
use of smaller power supplies and heatsinks.
The TAS5152 has an innovative protection system
integrated on-chip, safeguarding the device against a
wide range of fault conditions that could damage the
system. These safeguards are short-circuit protection,
overcurrent protection, undervoltage protection, and
overtemperature protection. The TAS5152 has a new
proprietary current-limiting circuit that reduces the
possibility of device shutdown during high-level music
transients. A new programmable overcurrent detector
allows the use of lower-cost inductors in the
demodulation output filter.
BTL OUTPUT POWER vs SUPPLY VOLTAGE
130
D Error Reporting
D EMI Compliant When Used With
110
Recommended System Design
APPLICATIONS
D Mini/Micro Audio System
D DVD Receiver
D Home Theater
DESCRIPTION
The TAS5152 is a third-generation, high-performance,
integrated stereo digital amplifier power stage with
improved protection system. The TAS5152 is capable
of driving a 4-Ω bridge-tied load (BTL) at up to 125 W
per channel with low integrated noise at the output, low
THD+N performance, and low idle power dissipation.
100
PO − Output Power − W
D Intelligent Gate Drive
TC = 75°C
THD+N @ 10%
120
4Ω
90
80
70
6Ω
60
50
40
30
8Ω
20
10
0
0
5
10
15
20
25
30
35
PVDD − Supply Voltage − V
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments
semiconductor products and disclaimers thereto appears at the end of this data sheet.
PurePath Digital and PowerPAD are trademarks of Texas Instruments.
Other trademarks are the property of their respective owners.
! "#$ %!& %
"! "! '! ! !( ! %% )*&
% "!+ %! !!$* $%! !+ $$ "!!&
Copyright  2005, Texas Instruments Incorporated
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SLES127A − FEBRUARY 2005 − REVISED NOVEMBER 2005
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during
storage or handling to prevent electrostatic damage to the MOS gates.
GENERAL INFORMATION
The TAS5152 is available in a 36-pin PSOP3 (DKD)
thermally enhanced package. The package contains a
heat slug that is located on the top side of the device for
convenient thermal coupling to the heatsink.
DKD PACKAGE
(TOP VIEW)
GVDD_B
OTW
SD
PWM_A
RESET_AB
PWM_B
OC_ADJ
GND
AGND
VREG
M3
M2
M1
PWM_C
RESET_CD
PWM_D
VDD
GVDD_C
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
19
GVDD_A
BST_A
PVDD_A
OUT_A
GND_A
GND_B
OUT_B
PVDD_B
BST_B
BST_C
PVDD_C
OUT_C
GND_C
GND_D
OUT_D
PVDD_D
BST_D
GVDD_D
MODE Selection Pins
MODE PINS
M3
M2
M1
0
0
0
0
0
1
0
1
0
0
1
1
1
0
0
1
0
1
1
1
0
PWM INPUT
OUTPUT
CONFIGURATION
PROTECTION
SCHEME
2N (1) AD/BD
modulation
2 channels
BTL output
BTL mode (2)
Reserved
1N (1) AD
modulation
2 channels
BTL output
BTL mode (2)
1N (1) AD
modulation
1 channel
PBTL output
PBTL mode.
Only PWM_A
input is used.
4 channels
SE output
Protection works
similarly to BTL
mode (2). Only
difference in SE
mode is that
OUT_x is Hi-Z
instead of a
pulldown through
internal pulldown
resistor.
1N (1) AD
modulation
Reserved
1
1
1
(1) The 1N and 2N naming convention is used to indicate the required
number of PWM lines to the power stage per channel in a specific
mode.
(2) An overload protection (OLP) occurring on A or B causes both
channels to shut down. An OLP on C or D works similarly. Global
errors like overtemperature error (OTE), undervoltage protection
(UVP) and power-on reset (POR) affect all channels.
Package Heat Dissipation Ratings (1)
PARAMETER
TAS5152DKD
RθJC (°C/W)—2 BTL or 4 SE
channels (8 transistors)
1.28
RθJC 〈°C/W)—1 BTL or 2 SE
channel(s) (4 transistors)
2.56
RθJC (°C/W)—(1 transistor)
Pad area (2)
8.6
80 mm2
(1) JC is junction-to-case, CH is case-to-heatsink.
(2) RθCH is an important consideration. Assume a 2-mil thickness of
typical thermal grease between the pad area and the heatsink. The
RθCH with this condition is 0.8°C/W for the DKD package and
1.8°C/W for the DDV package.
2
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SLES127A − FEBRUARY 2005 − REVISED NOVEMBER 2005
Absolute Maximum Ratings
Ordering Information
over operating free-air temperature range unless otherwise noted(1)
TAS5152
VDD to AGND
–0.3 V to 13.2 V
GVDD_X to AGND
–0.3 V to 13.2 V
PVDD_X to GND_X (2)
OUT_X to GND_X (2)
–0.3 V to 50 V
–0.3 V to 63.2 V
VREG to AGND
–0.3 V to 4.2 V
GND_X to GND
–0.3 V to 0.3 V
GND_X to AGND
–0.3 V to 0.3 V
GND to AGND
–0.3 V to 0.3 V
PWM_X, OC_ADJ, M1, M2, M3 to
AGND
–0.3 V to 4.2 V
Maximum continuous sink current (SD,
OTW)
Maximum operating junction
temperature range, TJ
Storage temperature
PACKAGE
DESCRIPTION
TAS5152DKD
36-pin PSOP3
For the most current specification and package
information, see the TI Web site at www.ti.com.
–0.3 V to 50 V
BST_X to GND_X (2)
RESET_X, SD, OTW to AGND
TA
0°C to 70°C
–0.3 V to 7 V
9 mA
0°C to 125°C
–40_C to 125_C
Lead temperature, 1,6 mm (1/16 inch)
from case for 10 seconds
260_C
Minimum pulse width low
50 ns
(1) Stresses beyond those listed under “absolute maximum ratings”
may cause permanent damage to the device. These are stress
ratings only, and functional operation of the device at these or any
other conditions beyond those indicated under “recommended
operating conditions” is not implied. Exposure to absolutemaximum-rated conditions for extended periods may affect device
reliability.
(2) These voltages represent the dc voltage + peak ac waveform
measured at the terminal of the device in all conditions.
3
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SLES127A − FEBRUARY 2005 − REVISED NOVEMBER 2005
Terminal Functions
TERMINAL
NAME
NO.
FUNCTION (1)
FUNCTION
AGND
9
P
Analog ground
BST_A
35
P
HS bootstrap supply (BST), external capacitor to OUT_A required
BST_B
28
P
HS bootstrap supply (BST), external capacitor to OUT_B required
BST_C
27
P
HS bootstrap supply (BST), external capacitor to OUT_C required
BST_D
20
P
HS bootstrap supply (BST), external capacitor to OUT_D required
GND
8
P
Ground
GND_A
32
P
Power ground for half-bridge A
GND_B
31
P
Power ground for half-bridge B
GND_C
24
P
Power ground for half-bridge C
GND_D
23
P
Power ground for half-bridge D
GVDD_A
36
P
Gate-drive voltage supply requires 0.1-µF capacitor to AGND
GVDD_B
1
P
Gate-drive voltage supply requires 0.1-µF capacitor to AGND
GVDD_C
18
P
Gate-drive voltage supply requires 0.1-µF capacitor to AGND
GVDD_D
19
P
Gate-drive voltage supply requires 0.1-µF capacitor to AGND
M1
13
I
Mode selection pin
M2
12
I
Mode selection pin
M3
11
I
Mode selection pin
OC_ADJ
7
O
Analog overcurrent programming pin requires resistor to ground
OTW
2
O
Overtemperature warning signal, open drain, active-low
OUT_A
33
O
Output, half-bridge A
OUT_B
30
O
Output, half-bridge B
OUT_C
25
O
Output, half-bridge C
OUT_D
22
O
Output, half-bridge D
PVDD_A
34
P
Power-supply input for half-bridge A requires close decoupling of 0.1-µF capacitor to
GND_A
PVDD_B
29
P
Power-supply input for half-bridge B requires close decoupling of 0.1-µF capacitor to
GND_B
PVDD_C
26
P
Power-supply input for half-bridge C requires close decoupling of 0.1-µF capacitor to
GND_C
PVDD_D
21
P
Power-supply input for half-bridge D requires close decoupling of 0.1-µF capacitor to
GND_D
PWM_A
4
I
Input signal for half-bridge A
PWM_B
6
I
Input signal for half-bridge B
PWM_C
14
I
Input signal for half-bridge C
PWM_D
16
I
Input signal for half-bridge D
RESET_AB
5
I
Reset signal for half-bridge A and half-bridge B, active-low
RESET_CD
15
I
Reset signal for half-bridge C and half-bridge D, active-low
SD
3
O
Shutdown signal, open drain, active-low
VDD
17
P
Power supply for digital voltage regulator requires 0.1-µF capacitor to GND.
P
Digital regulator supply filter pin requires 0.1-µF capacitor to AGND
VREG
10
(1) I = input, O = Output, P = Power
4
DESCRIPTION
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SLES127A − FEBRUARY 2005 − REVISED NOVEMBER 2005
SYSTEM BLOCK DIAGRAM
OTW
System
Microcontroller
SD
TAS5508
OTW
SD
BST_A
BST_B
RESET_AB
RESET_CD
VALID
PWM_A
LeftChannel
Output
OUT_A
Output
H-Bridge 1
Input
H-Bridge 1
PWM_B
OUT_B
Bootstrap
Capacitors
2nd-Order L-C
Output Filter
for Each
Half-Bridge
2-Channel
H-Bridge
BTL Mode
OUT_C
PWM_C
4
35 V
PVDD
System
Power
Supply
GND
12 V
4
PVDD
PowerSupply
Decoupling
OC_ADJ
AGND
VREG
M3
OUT_D
2nd-Order L-C
Output Filter
for Each
Half-Bridge
BST_C
VDD
M2
GND
PVDD_A, B, C, D
M1
GVDD_A, B, C, D
Input
H-Bridge 2
PWM_D
Hardwire
Mode
Control
Output
H-Bridge 2
GND_A, B, C, D
RightChannel
Output
BST_D
Bootstrap
Capacitors
4
GVDD
VDD
VREG
Power-Supply
Decoupling
Hardwire
OC Limit
GND
GVDD (12 V)/VDD (12 V)
VAC
5
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SLES127A − FEBRUARY 2005 − REVISED NOVEMBER 2005
FUNCTIONAL BLOCK DIAGRAM
VDD
Undervoltage
Protection
OTW
Internal Pullup
Resistors to VREG
SD
M1
Protection
and
I/O Logic
M2
M3
4
VREG
VREG
Power
On
Reset
AGND
Temp.
Sense
GND
RESET_AB
Overload
Protection
RESET_CD
Isense
OC_ADJ
GVDD_D
BST_D
PVDD_D
PWM_D
PWM
Rcv.
Ctrl.
Timing
Gate
Drive
OUT_D
BTL/PBTL−Configuration
Pulldown Resistor
GND_D
GVDD_C
BST_C
PVDD_C
PWM_C
PWM
Rcv.
Ctrl.
Timing
Gate
Drive
OUT_C
BTL/PBTL−Configuration
Pulldown Resistor
GND_C
GVDD_B
BST_B
PVDD_B
PWM_B
PWM
Rcv.
Ctrl.
Timing
Gate
Drive
OUT_B
BTL/PBTL−Configuration
Pulldown Resistor
GND_B
GVDD_A
BST_A
PVDD_A
PWM_A
PWM
Rcv.
Ctrl.
Timing
Gate
Drive
OUT_A
BTL/PBTL−Configuration
Pulldown Resistor
GND_A
6
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SLES127A − FEBRUARY 2005 − REVISED NOVEMBER 2005
RECOMMENDED OPERATING CONDITIONS
CONDITIONS
MIN
NOM
MAX
UNIT
PVDD_x
Half-bridge supply
DC supply voltage
0
35
37
V
GVDD_x
Supply for logic regulators and gate-drive
circuitry
DC supply voltage
10.8
12
13.2
V
VDD
Digital regulator input
DC supply voltage
10.8
12
13.2
V
RL (BTL)
RL (SE)
Output filter: L = 10 µH, C = 470 nF
Output AD modulation, switching
frequency > 350 kHz
3
4
Load impedance
2
3
RL (PBTL)
LOutput (BTL)
2
10
LOutput (SE)
Output-filter inductance
Output-filter
LOutput (PBTL)
FPWM
TJ
1.5
Ω
Minimum output inductance under
short-circuit condition
µH
10
10
PWM frame rate
192
Junction temperature
384
0
432
kHz
125
_C
AUDIO SPECIFICATIONS (BTL)
PVDD_X = 35 V, GVDD = VDD = 12 V, BTL mode, RL = 4 Ω, audio frequency = 1 kHz, AES17 filter, FPWM = 384 kHz, case temperature = 75°C,
unless otherwise noted. Audio performance is recorded as a chipset, using TAS5508 PWM processor with an effective modulation index limit of
96.1%. All performance is in accordance with recommended operating conditions unless otherwise specified.
TAS5152
SYMBOL
Po
PARAMETER
Power output per channel
THD+N
Total harmonic distortion + noise
Vn
SNR
Output integrated noise
Signal-to-noise ratio (1)
DNR
Dynamic range
CONDITIONS
MIN
TYP
MAX
UNIT
RL = 4 Ω,10% THD, clipped input
signal
125
RL = 6 Ω,10% THD, clipped input
signal
98
RL = 8 Ω,10% THD, clipped input
signal
76
RL = 4 Ω, 0 dBFS, unclipped input
signal
96
RL = 6 Ω, 0 dBFS, unclipped input
signal
72
RL = 8 Ω, 0 dBFS, unclipped input
signal
57
0 dBFS
0.1
1W
0.02
A-weighted
145
µV
A-weighted
102
dB
A-weighted, input level = –60 dBFS
using TAS5508 modulator
102
dB
A-weighted, input level = –60 dBFS
using TAS5518 modulator
110
dB
2
W
Pidle
Power dissipation due to idle losses (IPVDDx)
PO = 0 W, 2 channels switching (2)
(1) SNR is calculated relative to 0-dBFS input level.
(2) Actual system idle losses are affected by core losses of output inductors.
W
%
7
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SLES127A − FEBRUARY 2005 − REVISED NOVEMBER 2005
AUDIO SPECIFICATIONS (Single-Ended Output)
PVDD_X = 35 V, GVDD = VDD = 12 V, SE mode, RL = 4 Ω, audio frequency = 1 kHz, AES17 filter, FPWM = 384 kHz, case temperature = 75°C,
unless otherwise noted. Audio performance is recorded as a chipset, using TAS5086 PWM processor with an effective modulation index limit of
96.1%. All performance is in accordance with recommended operating conditions unless otherwise specified.
TAS5152
SYMBOL
Po
PARAMETER
Power output per channel
THD+N
Total harmonic distortion + noise
Vn
SNR
Output integrated noise
Signal-to-noise ratio (1)
DNR
CONDITIONS
MIN
RL = 3 Ω,10% THD, clipped input
signal
45
RL = 4 Ω,10% THD, clipped input
signal
35
RL = 3 Ω, 0 dBFS, unclipped input
signal
35
RL = 4 Ω, 0 dBFS, unclipped input
signal
25
MAX
UNIT
W
0 dBFS
0.2
1W
0.03
%
A-weighted
90
µV
A-weighted
100
dB
100
dB
2
W
A-weighted, input level = –60 dBFS
using TAS5508 modulator
PO = 0 W, 4 channels switching (2)
Dynamic range
TYP
Pidle
Power dissipation due to idle losses (IPVDDx)
(1) SNR is calculated relative to 0-dBFS input level.
(2) Actual system idle losses are affected by core losses of output inductors.
AUDIO SPECIFICATIONS (PBTL)
PVDD_X = 35 V, GVDD = VDD = 12 V, PBTL mode, RL = 3 Ω, audio frequency = 1 kHz, AES17 filter, FPWM = 384 kHz, case temperature =
75°C, unless otherwise noted. Audio performance is recorded as a chipset, using TAS5508 PWM processor with an effective modulation index
limit of 96.1%. All performance is in accordance with recommended operating conditions unless otherwise specified.
TAS5152
SYMBOL
Po
PARAMETER
Power output per channel
THD+N
Total harmonic distortion + noise
Vn
SNR
Output integrated noise
Signal-to-noise ratio (1)
DNR
Dynamic range
CONDITIONS
TYP
MAX
UNIT
RL = 3 Ω,10% THD, clipped input
signal
192
RL = 2 Ω,10% THD, clipped input
signal
240
RL = 3 Ω, 0 dBFS, unclipped input
signal
145
RL = 2 Ω, 0 dBFS, unclipped input
signal
190
0 dBFS
0.2
1W
0.02
A-weighted
160
µV
A-weighted
102
dB
A-weighted, input level = –60 dBFS
using TAS5508 modulator
102
dB
A-weighted, input level = –60 dBFS
using TAS5518 modulator
110
dB
2
W
Pidle
Power dissipation due to idle losses (IPVDDx)
PO = 0 W, 1 channel switching (2)
(1) SNR is calculated relative to 0-dBFS input level.
(2) Actual system idle losses are affected by core losses of output inductors.
8
MIN
W
%
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SLES127A − FEBRUARY 2005 − REVISED NOVEMBER 2005
ELECTRICAL CHARACTERISTICS
RL= 4 Ω. FPWM = 384 kHz, unless otherwise noted. All performance is in accordance with recommended operating conditions unless otherwise
specified.
SYMBOL
PARAMETER
CONDITIONS
TAS5152
MIN
TYP
MAX
UNITS
3
V
Internal Voltage Regulator and Current Consumption
VREG
Voltage regulator, only used as a reference node
IVDD
VDD supply current
IGVDD_x
Gate supply current per half-bridge
IPVDD_x
Half-bridge idle current
VDD = 12 V
3.3
3.6
Operating, 50% duty cycle
7
17
Idle, reset mode
6
11
50% duty cycle
mA
5
16
Reset mode
0.3
1
50% duty cycle, without
output filter or load
15
25
mA
Reset mode, no switching
7
25
µA
mA
Output Stage MOSFETs
RDSon,LS
Drain-to-source resistance, LS
TJ= 25°C, includes
metallization resistance,
GVDD = 12 V
140
155
mΩ
RDSon,HS
Drain-to-source resistance, HS
TJ= 25°C, includes
metallization resistance,
GVDD = 12 V
140
155
mΩ
9
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SLES127A − FEBRUARY 2005 − REVISED NOVEMBER 2005
ELECTRICAL CHARACTERISTICS (continued)
RL= 4 Ω. FPWM = 384 kHz, unless otherwise noted. All performance is in accordance with recommended operating conditions unless otherwise
specified.
SYMBOL
PARAMETER
CONDITIONS
TAS5152
MIN
TYP
MAX
UNITS
I/O Protection
Vuvp,G
Undervoltage protection limit, GVDD_x
Vuvp,hyst(1) Undervoltage protection hysteresis
OTW(1)
Overtemperature warning
115
Temperature drop needed below OTW temp. for
OTWHYST(1)
OTW to be inactive after the OTW event
OTE(1)
9.8
V
250
mV
125
135
_C
25
Overtemperature error
145
155
_C
165
_C
OTE-OTW
OTE-OTW differential
differential(1)
30
_C
Temperature drop needed below OTE temp. for
OTEHYST(1)
SD to be released following an OTE event
25
_C
1.25
ms
OLPC
Overload protection counter
IOC
Overcurrent limit protection
IOCT
ROCP
Overcurrent response time
RPD
Fpwm = 384 kHz
Resistor-programmable, high
end, ROCP = 15 kΩ
8.5
10.8
11.8
A
69
kΩ
210
OC programming resistor range
Resistor tolerance = 5%
Internal pulldown resistor at the output of each
half-bridge
Connected when RESET is
active to provide bootstrap
capacitor charge. Not used in
SE mode
15
ns
2.5
kΩ
Static Digital Specifications
VIH
High-level input voltage
VIL
Low-level input voltage
Leakage
Input leakage current
PWM_A, PWM_B, PWM_C,
PWM_D, M1, M2, M3,
RESET_AB, RESET_CD
2
V
–10
0.8
V
10
µA
kΩ
OTW/SHUTDOWN (SD)
RINT_PU
Internal pullup resistance, OTW to VREG, SD to
VREG
VOH
High-level output voltage
Internal pullup resistor
VOL
Low-level output voltage
FANOUT
Device fanout OTW , SD
(1) Specified by design
10
External pullup of 4.7 kΩ to
5V
IO = 4 mA
No external pullup
20
26
32
3
3.3
3.6
4.5
5
0.2
30
0.4
V
V
Devices
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SLES127A − FEBRUARY 2005 − REVISED NOVEMBER 2005
TYPICAL CHARACTERISTICS, BTL CONFIGURATION
TOTAL HARMONIC DISTORTION + NOISE
vs
OUTPUT POWER
OUTPUT POWER
vs
SUPPLY VOLTAGE
10
TC = 75°C
THD+N @ 10%
120
110
100
PO − Output Power − W
THD+N − Total Harmonic Distortion + Noise − %
130
TC = 75°C
PVDD = 35 V
One Channel
1
4Ω
6Ω
0.1
4Ω
90
80
70
6Ω
60
50
40
30
8Ω
20
8Ω
0.01
10
0
1
10
0
100
5
10
15
20
25
PO − Output Power − W
PVDD − Supply Voltage − V
Figure 1
Figure 2
UNCLIPPED OUTPUT POWER
vs
SUPPLY VOLTAGE
SYSTEM EFFICIENCY
vs
OUTPUT POWER
130
30
35
100
120
TC = 75°C
90
110
80
8Ω
70
90
80
Efficiency − %
PO − Output Power − W
100
4Ω
70
60
50
6Ω
40
6Ω
4Ω
60
50
40
30
30
20
20
8Ω
10
TC = 25°C
Two Channels
10
0
0
0
5
10
15
20
25
30
35
0
25
50
75 100 125 150 175 200 225 250
PVDD − Supply Voltage − V
PO − Output Power − W
Figure 3
Figure 4
11
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SLES127A − FEBRUARY 2005 − REVISED NOVEMBER 2005
SYSTEM POWER LOSS
vs
OUTPUT POWER
SYSTEM OUTPUT POWER
vs
CASE TEMPERATURE
50
150
TC = 25°C
45
130
40
120
PO − Output Power − W
4Ω
35
Power Loss − W
4Ω
140
30
6Ω
25
20
15
10
6Ω
110
100
90
80
70
60
8Ω
50
40
30
20
8Ω
5
THD+N @10%
10
0
0
0
25
50
75 100 125 150 175 200 225 250
10
20
30
40
60
70
80
90 100 110 120
TC − Case Temperature − °C
Figure 5
Figure 6
NOISE AMPLITUDE
vs
FREQUENCY
0
TC = 75°C
–60 dB
1 kHz
−10
−20
Noise Amplitude − dBr
−30
−40
−50
−60
−70
−80
−90
−100
−110
−120
−130
−140
−150
0
2
4
6
8
10
12
14
f − Frequency − kHz
Figure 7
12
50
PO − Output Power − W
16
18
20
22
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SLES127A − FEBRUARY 2005 − REVISED NOVEMBER 2005
TYPICAL CHARACTERISTICS, SE CONFIGURATION
TOTAL HARMONIC DISTORTION + NOISE
vs
OUTPUT POWER
OUTPUT POWER
vs
SUPPLY VOLTAGE
TC = 75°C
THD+N @ 10%
45
40
PO − Output Power − W
10
1
3Ω
0.1
35
30
3Ω
25
20
15
4Ω
10
4Ω
5
0.01
0
1
10
0
50
5
10
15
20
25
PO − Output Power − W
PVDD − Supply Voltage − V
Figure 8
Figure 9
30
35
OUTPUT POWER
vs
CASE TEMPERATURE
60
3Ω
55
50
PO − Output Power − W
THD+N − Total Harmonic Distortion + Noise − %
50
TC = 75°C
PVDD = 35 V
One Channel
45
40
35
30
4Ω
25
20
15
10
5
[email protected] 10%
0
10
20
30
40
50
60
70
80
90 100 110 120
TC − Case Temperature − °C
Figure 10
13
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SLES127A − FEBRUARY 2005 − REVISED NOVEMBER 2005
TYPICAL CHARACTERISTICS, PBTL CONFIGURATION
TOTAL HARMONIC DISTORTION + NOISE
vs
OUTPUT POWER
OUTPUT POWER
vs
SUPPLY VOLTAGE
10
TC = 75°C
THD+N @ 10%
240
220
200
PO − Output Power − W
THD+N − Total Harmonic Distortion + Noise − %
260
TC = 75°C
PVDD = 35 V
One Channel
1
2Ω
0.1
180
160
2Ω
140
120
100
80
60
3Ω
0.01
3Ω
40
20
0
1
10
0
100
5
10
20
25
PVDD − Supply Voltage − V
Figure 11
Figure 12
SYSTEM OUTPUT POWER
vs
CASE TEMPERATURE
300
THD+N @ 10%
280
2Ω
PO − Output Power − W
260
240
3Ω
220
200
180
160
140
120
100
10
20
30
40
50
60
70
80
90 100 110 120
TC − Case Temperature − °C
Figure 13
14
15
PO − Output Power − W
30
35
www.ti.com
SLES127A − FEBRUARY 2005 − REVISED NOVEMBER 2005
PVDD
10 Ω
GVDD
10 µF
3.3 Ω
100 nF
47 µF
50 V
10 Ω
1000 µF
50 V
10 nF
50 V
10 nF
50 V
TAS5152DKD
100 nF
1
Microcontroller
2
0Ω
Optional
3
BKND_ERR
GVDD_B
GVDD_A
35
OTW
SD
5
VALID
22 kΩ
PWM_P_2
7
OUT_A
RESET_AB
GND_A
PWM_B
GND_B
OC_ADJ
OUT_B
12
13
14
28
AGND
BST_B
VREG
BST_C
26
M3
PVDD_C
M2
OUT_C
M1
GND_C
PWM_C
GND_D
RESET_CD
OUT_D
10 Ω
47 µF
50 V
47 µF
50 V
100 nF
50 V
3.3 Ω
470 nF
100 V
23
10 µH @ 10 A
PVDD_D
17
100 nF
50 V
20
BST_D
19
18
GVDD_C
10 nF
50 V
10 µH @ 10 A
24
21
PWM_D
100 nF
100 nF
50 V
22
VDD
10 µF
33 nF
100 nF
50 V
25
16
GVDD
33 nF
27
15
1Ω
10 nF
50 V
29
PVDD_B
10
100 nF 11
3.3 Ω
30
9
TAS5508
100 nF
50 V
31
GND
470 nF
100 V
10 µH @ 10 A
32
3.3 Ω
10 µH @ 10 A
33
PWM_A
8
PWM_M_2
100 nF
50 V
34
PVDD_A
6
PWM_M_1
33 nF
BST_A
4
PWM_P_1
100 nF
50 V
36
47 µF
50 V
100 nF
50 V
3.3 Ω
10 nF
50 V
33 nF
GVDD_D
PVDD
100 nF
100 nF
10 Ω
3.3 Ω
10 nF
50 V
1000 µF
50 V
Figure 14. Typical Differential (2N) BTL Application With AD Modulation Filters
15
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SLES127A − FEBRUARY 2005 − REVISED NOVEMBER 2005
PVDD
10 Ω
GVDD
10 µF
3.3 Ω
100 nF
47 µF
50 V
10 Ω
1000 µF
50 V
10 nF
50 V
10 nF
50 V
TAS5152DKD
100 nF
1
Microcontroller
2
0Ω
Optional
3
BKND_ERR
GVDD_B
GVDD_A
35
OTW
SD
5
VALID
7
OUT_A
RESET_AB
GND_A
PWM_B
GND_B
OC_ADJ
OUT_B
11
12
13
14
28
AGND
BST_B
VREG
BST_C
26
M3
PVDD_C
M2
OUT_C
M1
GND_C
PWM_C
GND_D
RESET_CD
OUT_D
10 Ω
100 nF
47 µF
50 V
47 µF
50 V
3.3 Ω
470 nF
100 V
10 µH @ 10 A
PVDD_D
100 nF
50 V
20
BST_D
19
18
GVDD_C
100 nF
50 V
23
21
PWM_D
10 nF
50 V
10 µH @ 10 A
22
VDD
10 µF
100 nF
50 V
24
17
GVDD
33 nF
100 nF
50 V
25
16
No connect
33 nF
27
15
1Ω
10 nF
50 V
29
PVDD_B
10
TAS5508
3.3 Ω
30
9
100 nF
100 nF
50 V
31
GND
470 nF
100 V
10 µH @ 10 A
32
3.3 Ω
10 µH @ 10 A
33
PWM_A
8
PWM_P_2
100 nF
50 V
34
PVDD_A
6
No connect
22 kΩ
33 nF
BST_A
4
PWM_P_1
100 nF
50 V
36
47 µF
50 V
50 nF
100 V
3.3 Ω
10 nF
50 V
33 nF
GVDD_D
PVDD
100 nF
100 nF
10 Ω
3.3 Ω
10 nF
50 V
1000 µF
50 V
Figure 15. Typical Non-Differential (1N) BTL Application With AD Modulation Filters
16
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SLES127A − FEBRUARY 2005 − REVISED NOVEMBER 2005
10 Ω
100 nF
GVDD
10 µF
PVDD
47 µF
50 V
10 Ω
3.3 Ω
TAS5152DKD
100 nF
1
Microcontroller
2
0Ω
Optional
3
BKND_ERR
GVDD_B
GVDD_A
35
OTW
5
VALID
SD
PVDD_A
39 kΩ
PWM_P_3
7
33
PWM_A
OUT_A
RESET_AB
GND_A
PWM_B
GND_B
OC_ADJ
OUT_B
30
29
PVDD_B
9
TAS5508
12
13
14
BST_B
VREG
BST_C
27
M3
PVDD_C
M2
OUT_C
M1
GND_C
PWM_C
GND_D
RESET_CD
OUT_D
47 µF
50 V
23
10 µH @ 10 A
D
21
PWM_D
PVDD_D
100 nF
50 V
20
BST_D
GVDD_D
PVDD
100 nF
100 nF
3.3 Ω
100 nF
100 V
PVDD
220 µF
50 V
1 µF
50 V
100 nF
100 V
10 nF
50 V
100 nF
100 V
3.3 Ω
C
10 nF @ 50 V
2.7 kΩ
PVDD
3.3 Ω
PVDD/2
220 µF
50 V
1 µF
50 V
100 nF
100 V
10 nF
50 V
3.3 Ω
10 nF @ 50 V
3.3 Ω
PVDD/2
220 µF
50 V
220 µF
50 V
100 nF
100 V
B
2.7 kΩ
PVDD
1000 µF
50 V
10 nF
50 V
10 Ω
2.7 kΩ
47 µF
50 V
33 nF
19
18
GVDD_C
10 Ω
A
C
10 µH @ 10 A
22
VDD
10 µF
47 µF
50 V
100 nF
50 V
24
17
100 nF
100 nF
50 V
25
16
1Ω
33 nF
26
15
GVDD
33 nF
28
AGND
10
11
B
31
GND
100 nF
10 µH @ 10 A
32
8
PWM_P_4
A
10 µH @ 10 A
100 nF
50 V
34
6
PWM_P_2
33 nF
BST_A
4
PWM_P_1
1000 µF
50 V
10 nF
50 V
36
220 µF
50 V
PVDD/2
1 µF
50 V
100 nF
100 V
10 nF
50 V
100 nF
100 V
3.3 Ω
D
10 nF @ 50 V
2.7 kΩ
PVDD
3.3 Ω
220 µF
50 V
1 µF
50 V
100 nF
100 V
10 nF
50 V
3.3 Ω
10 nF @ 50 V
3.3 Ω
PVDD/2
220 µF
50 V
220 µF
50 V
Figure 16. Typical SE Application
17
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SLES127A − FEBRUARY 2005 − REVISED NOVEMBER 2005
PVDD
10 Ω
GVDD
10 µF
3.3 Ω
100 nF
47 µF
50 V
10 Ω
1000 µF
50 V
10 nF
50 V
10 nF
50 V
TAS5152DKD
100 nF
1
Microcontroller
2
0Ω
Optional
3
BKND_ERR
GVDD_B
GVDD_A
35
OTW
SD
5
VALID
30 kΩ
7
OUT_A
RESET_AB
GND_A
PWM_B
GND_B
OC_ADJ
OUT_B
TAS5508
13
14
28
AGND
BST_B
VREG
BST_C
26
M3
PVDD_C
M2
OUT_C
M1
GND_C
PWM_C
GND_D
RESET_CD
OUT_D
10 Ω
47 µF
50 V
47 µF
50 V
10 µH @ 10 A
23
10 µH @ 10 A
22
21
PVDD_D
100 nF
50 V
20
VDD
100 nF
100 nF
50 V
24
17
10 µF
33 nF
100 nF
50 V
25
16
GVDD
33 nF
27
PWM_D
BST_D
19
18
GVDD_C
47 µF
50 V
33 nF
GVDD_D
PVDD
100 nF
100 nF
10 Ω
3.3 Ω
10 nF
50 V
1000 µF
50 V
Figure 17. Typical Differential (2N) PBTL Application With AD Modulation Filters
18
3.3 Ω
10 nF
50 V
29
PVDD_B
15
1Ω
100 nF
100 V
30
10
12
470 nF
63 V
31
9
11
10 µH @ 10 A
10 µH @ 10 A
32
GND
3.3 Ω
33
PWM_A
8
100 nF
100 nF
50 V
34
PVDD_A
6
PWM_M_1
33 nF
BST_A
4
PWM_P_1
100 nF
100 V
36
www.ti.com
SLES127A − FEBRUARY 2005 − REVISED NOVEMBER 2005
PVDD
10 Ω
GVDD
10 µF
3.3 Ω
100 nF
47 µF
50 V
10 Ω
1000 µF
50 V
10 nF
50 V
TAS5152DKD
100 nF
1
Microcontroller
2
0Ω
Optional
3
BKND_ERR
GVDD_B
GVDD_A
35
OTW
SD
5
VALID
7
OUT_A
RESET_AB
GND_A
PWM_B
GND_B
OC_ADJ
OUT_B
13
14
No connect
28
AGND
BST_B
VREG
BST_C
26
M2
OUT_C
M1
GND_C
PWM_C
GND_D
RESET_CD
OUT_D
10 Ω
100 nF
47 µF
50 V
100 nF
100 V
3.3 Ω
10 nF
50 V
10 µH @ 10 A
24
23
10 µH @ 10 A
22
21
PWM_D
PVDD_D
100 nF
50 V
20
VDD
10 µF
100 nF
50 V
470 nF
63 V
47 µF
50 V
25
17
GVDD
33 nF
100 nF
50 V
PVDD_C
16
No connect
33 nF
27
M3
3.3 Ω
29
PVDD_B
15
1Ω
100 nF
100 V
30
10
12
10 nF
50 V
31
GND
TAS5508
10 µH @ 10 A
32
9
11
10 µH @ 10 A
33
PWM_A
8
100 nF
100 nF
50 V
34
PVDD_A
6
No connect
30 kΩ
33 nF
BST_A
4
PWM_P_1
36
BST_D
19
18
GVDD_C
47 µF
50 V
33 nF
GVDD_D
PVDD
100 nF
100 nF
10 Ω
3.3 Ω
10 nF
50 V
1000 µF
50 V
Figure 18. Typical Non-Differential (1N) PBTL Application
19
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SLES127A − FEBRUARY 2005 − REVISED NOVEMBER 2005
THEORY OF OPERATION
POWER SUPPLIES
To facilitate system design, the TAS5152 needs only a
12-V supply in addition to the (typically) 35-V power-stage
supply. An internal voltage regulator provides suitable
voltage levels for the digital and low-voltage analog
circuitry. Additionally, all circuitry requiring a floating
voltage supply, e.g., the high-side gate drive, is
accommodated by built-in bootstrap circuitry requiring
only a few external capacitors.
In order to provide outstanding electrical and acoustical
characteristics, the PWM signal path including gate drive
and output stage is designed as identical, independent
half-bridges. For this reason, each half-bridge has
separate gate drive supply (GVDD_X), bootstrap pins
(BST_X), and power-stage supply pins (PVDD_X).
Furthermore, an additional pin (VDD) is provided as supply
for all common circuits. Although supplied from the same
12-V source, it is highly recommended to separate
GVDD_A, GVDD_B, GVDD_C, GVDD_D, and VDD on
the printed-circuit board (PCB) by RC filters (see
application diagram for details). These RC filters provide
the recommended high-frequency isolation. Special
attention should be paid to placing all decoupling
capacitors as close to their associated pins as possible. In
general, inductance between the power-supply pins and
decoupling capacitors must be avoided. (See reference
board documentation for additional information.)
For a properly functioning bootstrap circuit, a small
ceramic capacitor must be connected from each bootstrap
pin (BST_X) to the power-stage output pin (OUT_X).
When the power−stage output is low, the bootstrap
capacitor is charged through an internal diode connected
between the gate-drive power-supply pin (GVDD_X) and
the bootstrap pin. When the power-stage output is high,
the bootstrap capacitor potential is shifted above the
output potential and thus provides a suitable voltage
supply for the high-side gate driver. In an application with
PWM switching frequencies in the range 352 kHz to 384
kHz, it is recommended to use 33-nF ceramic capacitors,
size 0603 or 0805, for the bootstrap supply. These 33-nF
capacitors ensure sufficient energy storage, even during
minimal PWM duty cycles, to keep the high-side
power-stage FET (LDMOS) fully turned on during the
remaining part of the PWM cycle. In an application running
at a reduced switching frequency, generally 192 kHz, the
bootstrap capacitor might need to be increased in value.
Special attention should be paid to the power-stage power
supply; this includes component selection, PCB
placement and routing. As indicated, each half-bridge has
independent power-stage supply pins (PVDD_X). For
optimal electrical performance, EMI compliance, and
20
system reliability, it is important that each PVDD_X pin is
decoupled with a 100-nF ceramic capacitor placed as
close as possible to each supply pin. It is recommended to
follow the PCB layout of the TAS5152 reference design.
For additional information on recommended power supply
and required components, see the application diagrams
given previously in this data sheet.
The 12-V supply should be from a low-noise,
low-output-impedance voltage regulator. Likewise, the
35-V power-stage supply is assumed to have low output
impedance and low noise. The power-supply sequence is
not critical as facilitated by the internal power-on-reset
circuit. Moreover, the TAS5152 is fully protected against
erroneous power-stage turnon due to parasitic gate
charging. Thus, voltage-supply ramp rates (dV/dt) are
non-critical within the specified range (see the
Recommended Operating Conditions section of this data
sheet).
SYSTEM POWER-UP/POWER-DOWN
SEQUENCE
Powering Up
The TAS5152 does not require a power-up sequence. The
outputs of the H−bridges remain in a high-impedance state
until the gate-drive supply voltage (GVDD_X) and VDD
voltage are above the undervoltage protection (UVP)
voltage threshold (see the Electrical Characteristics
section of this data sheet). Although not specifically
required, it is recommended to hold RESET_AB and
RESET_CD in a low state while powering up the device.
This allows an internal circuit to charge the external
bootstrap capacitors by enabling a weak pulldown of the
half-bridge output.
When the TAS5152 is being used with TI PWM modulators
such as the TAS5508, no special attention to the state of
RESET_AB and RESET_CD is required, provided that the
chipset is configured as recommended.
Powering Down
The TAS5152 does not require a power-down sequence.
The device remains fully operational as long as the
gate-drive supply (GVDD_X) voltage and VDD voltage are
above the undervoltage protection (UVP) voltage
threshold (see the Electrical Characteristics section of this
data sheet). Although not specifically required, it is a good
practice to hold RESET_AB and RESET_CD low during
power down, thus preventing audible artifacts including
pops or clicks.
When the TAS5152 is being used with TI PWM modulators
such as the TAS5508, no special attention to the state of
RESET_AB and RESET_CD is required, provided that the
chipset is configured as recommended.
www.ti.com
SLES127A − FEBRUARY 2005 − REVISED NOVEMBER 2005
Use of TAS5152 in High-Modulation-Index
Capable Systems
ERROR REPORTING
The SD and OTW pins are both active-low, open-drain
outputs. Their function is for protection-mode signaling to
a PWM controller or other system-control device.
Any fault resulting in device shutdown is signaled by the
SD pin going low. Likewise, OTW goes low when the
device junction temperature exceeds 125°C (see the
following table).
SD
OTW
DESCRIPTION
0
0
Overtemperature (OTE) or overload (OLP) or
undervoltage (UVP)
0
1
Overload (OLP) or undervoltage (UVP)
1
0
Junction temperature higher than 125°C
(overtemperature warning)
1
1
Junction temperature lower than 125°C and no
OLP or UVP faults (normal operation)
Note that asserting either RESET_AB or RESET_CD low
forces the SD signal high, independent of faults being
present. TI recommends monitoring the OTW signal using
the system microcontroller and responding to an
overtemperature warning signal by, e.g., turning down the
volume to prevent further heating of the device resulting in
device shutdown (OTE).
To reduce external component count, an internal pullup
resistor to 3.3 V is provided on both SD and OTW outputs.
Level compliance for 5-V logic can be obtained by adding
external pullup resistors to 5 V (see the Electrical
Characteristics section of this data sheet for further
specifications).
DEVICE PROTECTION SYSTEM
TAS5152 contains advanced protection circuitry carefully
designed to facilitate system integration and ease of use,
as well as to safeguard the device from permanent failure
due to a wide range of fault conditions such as short
circuits, overload, overtemperature, and undervoltage.
The TAS5152 responds to a fault by immediately setting
the power stage in a high-impedance state (Hi-Z) and
asserting the SD pin low. In situations other than overload,
the device automatically recovers when the fault condition
has been removed, i.e., the junction temperature has
dropped or the voltage supply has increased. For highest
possible reliability, recovering from an overload fault
requires external reset of the device (see the Device Reset
section of this data sheet) no sooner than 1 second after
the shutdown.
This device requires at least 50 ns of low time on the output
per 384-kHz PWM frame rate in order to keep the
bootstrap capacitors charged. As an example, if the
modulation index is set to 99.2% in the TAS5508, this
setting allows PWM pulse durations down to 20 ns. This
signal, which does not meet the 50-ns requirement, is sent
to the PWM_x pin and this low-state pulse time does not
allow the bootstrap capacitor to stay charged. In this
situation, the low voltage across the bootstrap capacitor
can cause a failure of the high-side MOSFET transistor,
especially when driving a low-impedance load. The
TAS5152 device requires limiting the TAS5508 modulation
index to 96.1% to keep the bootstrap capacitor charged
under all signals and loads.
Therefore, TI strongly recommends using a TI PWM
processor, such as TAS5508 or TAS5086, with the
modulation index set at 96.1% to interface with TAS5152.
Overcurrent (OC) Protection With Current
Limiting and Overload Detection
The device has independent, fast-reacting current
detectors with programmable trip threshold (OC threshold)
on all high-side and low-side power-stage FETs. See the
following table for OC-adjust resistor values. The detector
outputs are closely monitored by two protection systems.
The first protection system controls the power stage in
order to prevent the output current from further increasing,
i.e., it performs a current-limiting function rather than
prematurely shutting down during combinations of
high-level music transients and extreme speaker load
impedance drops. If the high-current situation persists,
i.e., the power stage is being overloaded, a second
protection system triggers a latching shutdown, resulting
in the power stage being set in the high-impedance (Hi-Z)
state. Current limiting and overload protection are
independent for the half-bridges A and B and, respectively,
C and D. That is, if the bridge-tied load between
half-bridges A and B causes an overload fault, only
half-bridges A and B are shut down.
D For the lowest-cost bill of materials in terms
D
of component selection, the OC threshold
measure should be limited, considering the
power output requirement and minimum
load impedance. Higher-impedance loads
require a lower OC threshold.
The demodulation-filter inductor must retain
at least 3 µH of inductance at twice the OC
threshold setting.
21
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SLES127A − FEBRUARY 2005 − REVISED NOVEMBER 2005
Unfortunately, most inductors have decreasing inductance
with increasing temperature and increasing current
(saturation). To some degree, an increase in temperature
naturally occurs when operating at high output currents,
due to core losses and the DC resistance of the inductor’s
copper winding. A thorough analysis of inductor saturation
and thermal properties is strongly recommended.
resulting in all half-bridge outputs being set in the
high-impedance state (Hi-Z) and SD being asserted low.
OTE is latched in this case. To clear the OTE latch, both
RESET_AB and RESET_CD must be asserted.
Thereafter, the device resumes normal operation.
Setting the OC threshold too low might cause issues such
as lack of enough output power and/or unexpected
shutdowns due to too-sensitive overload detection.
The UVP and POR circuits of the TAS5152 fully protect the
device in any power-up/down and brownout situation.
While powering up, the POR circuit resets the overload
circuit (OLP) and ensures that all circuits are fully
operational when the GVDD_X and VDD supply voltages
reach 9.8 V (typical). Although GVDD_X and VDD are
independently monitored, a supply voltage drop below the
UVP threshold on any VDD or GVDD_X pin results in all
half-bridge outputs immediately being set in the
high-impedance state (Hi-Z) and SD being asserted low.
The device automatically resumes operation when all
supply voltages have increased above the UVP threshold.
In general, it is recommended to follow closely the external
component selection and PCB layout as given in the
Application section.
For added flexibility, the OC threshold is programmable
within a limited range using a single external resistor
connected between the OC_ADJ pin and AGND. (See the
Electrical Characteristics section of this data sheet for
information on the correlation between programmingresistor value and the OC threshold.) It should be noted
that a properly functioning overcurrent detector assumes
the presence of a properly designed demodulation filter at
the power-stage output. Short-circuit protection is not
provided directly at the output pins of the power stage but
only on the speaker terminals (after the demodulation
filter). It is required to follow certain guidelines when
selecting the OC threshold and an appropriate
demodulation inductor:
OC-Adjust Resistor Values
(kW)
Max. Current Before OC
Occurs (A)
15
10.8
22
9.4
27
8.6
39
6.4
47
6
69
4.7
Overtemperature Protection
The TAS5152 has a two-level temperature-protection
system that asserts an active-low warning signal (OTW)
when the device junction temperature exceeds 125°C
(nominal) and, if the device junction temperature exceeds
155°C (nominal), the device is put into thermal shutdown,
22
Undervoltage Protection (UVP) and Power-On
Reset (POR)
DEVICE RESET
Two reset pins are provided for independent control of
half-bridges A/B and C/D. When RESET_AB is asserted
low, all four power-stage FETs in half-bridges A and B are
forced into a high-impedance state (Hi-Z). Likewise,
asserting RESET_CD low forces all four power-stage
FETs in half-bridges C and D into a high-impedance state.
Thus, both reset pins are well suited for hard-muting the
power stage if needed.
In BTL modes, to accommodate bootstrap charging prior
to switching start, asserting the reset inputs low enables
weak pulldown of the half-bridge outputs. In the SE mode,
the weak pulldowns are not enabled, and it is therefore
recommended to ensure bootstrap capacitor charging by
providing a low pulse on the PWM inputs when reset is
asserted high.
Asserting either reset input low removes any fault
information to be signalled on the SD output, i.e., SD is
forced high.
A rising-edge transition on either reset input allows the
device to resume operation after an overload fault.
www.ti.com
SLES127A − FEBRUARY 2005 − REVISED NOVEMBER 2005
MECHANICAL DATA
23
PACKAGE OPTION ADDENDUM
www.ti.com
8-Jan-2007
PACKAGING INFORMATION
Orderable Device
Status (1)
Package
Type
Package
Drawing
Pins Package Eco Plan (2)
Qty
TAS5152DKD
ACTIVE
SSOP
DKD
36
29
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-4-260C-72 HR
TAS5152DKDG4
ACTIVE
SSOP
DKD
36
29
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-4-260C-72 HR
TAS5152DKDR
ACTIVE
SSOP
DKD
36
500
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-4-260C-72 HR
TAS5152DKDRG4
ACTIVE
SSOP
DKD
36
500
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-4-260C-72 HR
Lead/Ball Finish
MSL Peak Temp (3)
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS
compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
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Addendum-Page 1
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