ANALOGPOWER AM6968NE

Analog Power
AM6968NE
Dual N-Channel 20-V (D-S) MOSFET
VDS (V)
Key Features:
• Low rDS(on) trench technology
• Low thermal impedance
• Fast switching speed
20
PRODUCT SUMMARY
rDS(on) (mΩ)
26 @ VGS = 4.5V
35 @ VGS = 2.5V
46 @ VGS = 1.8V
ID(A)
6.8
5.8
4.7
Typical Applications:
• Battery Powered Instruments
• Portable Computing
• Mobile Phones
• GPS Units and Media Players
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
TA=25°C
TA=70°C
Continuous Drain Current a
Pulsed Drain Current b
Units
TJ, Tstg
Limit
20
±8
6.8
5.5
30
2.2
1.5
1
-55 to 150
Symbol
Maximum
Units
RθJA
83
120
°C/W
ID
IDM
IS
Continuous Source Current (Diode Conduction) a
TA=25°C
TA=70°C
Power Dissipation a
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
t <= 10 sec
Steady State
Maximum Junction-to-Ambient a
PD
V
A
A
W
°C
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
© Preliminary
1
Publication Order Number: DS_AM6968NE_1A
Analog Power
AM6968NE
Electrical Characteristics
Parameter
Symbol
Gate-Source Threshold Voltage
Gate-Body Leakage
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current
ID(on)
Drain-Source On-Resistance
rDS(on)
Forward Transconductance
Diode Forward Voltage
gfs
VSD
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Test Conditions
Static
VDS = VGS, ID = 250 uA
VDS = 0 V, VGS = ±8 V
VDS = 16 V, VGS = 0 V
VDS = 16 V, VGS = 0 V, TJ = 55°C
VDS = 5 V, VGS = 4.5 V
VGS = 4.5 V, ID = 5.0 A
VGS = 2.5 V, ID = 4.3 A
VGS = 1.8 V, ID = 3.5 A
VDS = 10 V, ID = 5.0 A
IS = 2.2 A, VGS = 0 V
Dynamic
VDS = 10 V, VGS = 4.5 V, ID = 5.0 A
VDD = 10 V, RL = 2.0 Ω , ID = 5.0 A,
VGEN = 10 V, RGEN = 6 Ω
VDS = 10 V, VGS = 0 V, f =1 MHz
Min
Typ
Max
0.4
±100
1
10
25
Unit
V
nA
uA
A
26
35
46
25
0.7
6.2
1.0
1.9
12
15
56
17
479
72
58
mΩ
S
V
nC
ns
pF
Notes
a. Pulse test: PW <= 300us duty cycle <= 2%.
b. Guaranteed by design, not subject to production testing.
Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or use of
any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical”
parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and actual performance may vary
over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. APL does not
convey any license under its patent rights nor the rights of others. APL products are not designed, intended, or authorized for use as components in
systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure
of the APL product could create a situation where personal injury or death may occur. Should Buyer purchase or use APL products for any such
unintended or unauthorized application, Buyer shall indemnify and hold APL and its officers, employees, subsidiaries, affiliates, and distributors harmless
against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that APL was negligent regarding the design or manufacture of the part.
APL is an Equal Opportunity/Affirmative Action Employer.
© Preliminary
2
Publication Order Number: DS_AM6968NE_1A
Analog Power
AM6968NE
Typical Electrical Characteristics
10
0.05
TJ = 25°C
0.04
8
ID - Drain Current (A)
RDS(on) - On-Resistance(Ω)
9
1.8V
0.03
2.5V
3.5V
0.02
4.5V 6V,8V
7
6
5
4
3
0.01
2
1
0
0
0
2
4
6
8
10
0
0.5
1
1.5
2
ID-Drain Current (A)
VGS - Gate-to-Source Voltage (V)
1. On-Resistance vs. Drain Current
2. Transfer Characteristics
2.5
0.08
TJ = 25°C
TJ = 25°C
ID = 5.0A
0.06
IS - Source Current (A)
RDS(on) - On--Resistance(Ω)
0.07
0.05
0.04
0.03
0.02
10
1
0.1
0.01
0
0.01
0
2
4
6
8
0
0.3
VGS - Gate-to-Source Voltage (V)
3. On-Resistance vs. Gate-to-Source Voltage
10
0.9
1.2
1.5
4. Drain-to-Source Forward Voltage
900
8V,6V,4.5V,3.5V
F = 1MHz
9
800
8
700
2.5V
7
Capacitance (pf)
ID - Drain Current (A)
0.6
VSD - Source-to-Drain Voltage (V)
1.8V
6
5
4
1.5V
3
600
400
300
2
200
1
100
0
0
0
0.1
0.2
0.3
0.4
0.5
Coss
Crss
0
5
10
15
20
VDS-Drain-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
5. Output Characteristics
© Preliminary
Ciss
500
6. Capacitance
3
Publication Order Number: DS_AM6968NE_1A
Analog Power
AM6968NE
Typical Electrical Characteristics
8
2
7
ID = 5.0A
RDS(on) - On-Resistance(Ω)
(Normalized)
VGS-Gate-to-Source Voltage (V)
VDS = 10V
6
5
4
3
2
1.5
1
1
0
0.5
0
2
4
6
8
10
12
-50
-25
Qg - Total Gate Charge (nC)
0
25
50
75
100
125
150
TJ -JunctionTemperature(°C)
7. Gate Charge
8. Normalized On-Resistance Vs
Junction Temperature
PEAK TRANSIENT POWER (W)
40
10 uS
100 uS
10
ID Current (A)
1 mS
10 mS
100 mS
1
1 SEC
10 SEC
100 SEC
0.1
1
DC
Idm limit
35
30
25
20
15
10
5
Limited by
RDS
0.01
0
0.1
1
10
100
0.001
0.01
0.1
1
10
100
t1 TIME (SEC)
VDS Drain to Source Voltage (V)
9. Safe Operating Area
10. Single Pulse Maximum Power Dissipation
1
D = 0.5
0.2
0.1
RθJA(t) = r(t) + RθJA
RθJA = 120 °C /W
0.1
0.05
0.02
P(pk)
Single Pulse
t1
t2
0.01
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.001
0.0001
0.001
0.01
0.1
1
10
100
t1 TIME (sec)
11. Normalized Thermal Transient Junction to Ambient
© Preliminary
4
Publication Order Number: DS_AM6968NE_1A
Analog Power
AM6968NE
Package Information
Note:
1. All Dimension Are In mm.
2. Package Body Sizes Exclude Mold Flash, Protrusion Or Gate Burrs. Mold Flash, Protrusion Or Gate Burrs Shall Not Exceed
0.10 mm Per Side.
3. Package Body Sizes Determined At The Outermost Extremes Of The Plastic Body Exclusive Of Mold Flash, Tie Bar
Burrs, Gate Burrs And Interlead Flash, But Including Any Mismatch Between The Top And Bottom Of The Plastic Body.
4. The Package Top May Be Smaller Than The Package Bottom.
5. Dimension "B" Does Not Include Dambar Protrusion. Allowable Dambar Protrusion Shall Be 0.08 mm Total In Excess Of "B"
Dimension At Maximum Material Condition. The Dambar Cannot Be Located On The Lower Radius Of The Foot.
© Preliminary
5
Publication Order Number: DS_AM6968NE_1A