ANALOGPOWER AM3599C

Analog Power
AM3599C
N & P-Channel 32-V (D-S) MOSFET
These miniature surface mount MOSFETs
utilize a high cell density trench process to
provide low rDS(on) and to ensure minimal
power loss and heat dissipation. Typical
applications are DC-DC converters and
power management in portable and
battery-powered products such as
computers, printers, PCMCIA cards,
cellular and cordless telephones.
•
•
•
•
Low rDS(on) provides higher efficiency and
extends battery life
Low thermal impedance copper leadframe
TSOP-6 saves board space
Fast switching speed
High performance trench technology
PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)
ID (A)
0.063 @ VGS = 10V
0.090 @ VGS = 4.5V
0.112 @ VGS = -10V
0.172 @ VGS = -4.5V
30
-30
TSOP-6
Top View
3.7
3.1
-2.7
-2.2
D1
G1
1
6
D1
S2
G2
2
3
5
4
S1
D2
S2
G2
G1
S1
N-Channel MOSFET
D2
P-Channel MOSFET
o
ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED)
Symbol N-Channel P-Channe l Units
Parame ter
Drain-Source Voltage
30
-30
VDS
V
Gate-Source Voltage
±20
±20
VGS
o
TA=25 C
a
Continuous Drain Current
o
TA=70 C
b
ID
IDM
Pulsed Drain Current
a
IS
Continuous Source Current (Diode Conduction)
o
TA=25 C
a
Power Dissipation
o
TA=70 C
-2.7
2.9
-2.1
8
-8
1.05
-1.05
A
A
1.15
PD
W
0.7
TJ, Tstg
Operating Junction and Storage Temperature Range
3.7
o
C
-55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Symbol
t <= 10 sec
Steady State
RthJA
N-Channel
Typ
Max
P-Channel
Typ
Max
Unit
93
130
93
130
o
110
150
110
150
C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
1
PRELIMINARY
Publication Order Number:
DS-AM3599_F
Analog Power
AM3599C
SPECIFICATIONS (TA = 25oC UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
Ch
VGS = VDS, ID = 250 uA
VGS = VDS, ID = -250 uA
VDS = 0 V, VGS = 20 V
VDS = 0 V, VGS = -20 V
N
P
N
Limits
Min
Typ
Max
Unit
Static
VGS(th)
Gate-Threshold Voltage
Gate-Body Leakage Current
IGSS
Zero Gate Voltage Drain Current
IDSS
A
ID(on)
On-State Drain Current
A
Drain-Source On-Resistance
A
Forward Tranconductance
A
Diode Forward Voltage
rDS(on)
gfs
VSD
b
1
-1
P
N
P
VDS = 24 V, VGS = 0 V
VDS = -24 V, VGS = 0 V
1.6
-1.6
4.5nA
2.5
-2.5
100
-4.5nA
12nA
-12nA
-100
1
-1
o
N
10
o
P
-10
VDS = 24 V, VGS = 0 V, T J = 55 C
VDS = -24 V, VGS = 0 V, TJ = 55 C
VDS = 5 V, VGS = 10 V
VDS = -5 V, VGS = -10 V
VGS = 10 V, ID = 3.7 A
VGS = -10 V, ID = 3.1 A
VGS = 4.5 V, ID = 2.7 A
VGS = -4.5 V, ID = -2.2 A
VDS = 5 V, ID = 3.7 A
N
5
P
N
P
N
P
N
-5
V
uA
uA
uA
A
0.057
0.100
0.075
0.148
10
VDS = -5 V, ID = 3.1 A
P
5
IS = 1.05 A, VGS = 0 V
N
0.80
IS = -1.05 A, VGS = 0 V
P
-0.83
N
P
N
P
N
P
N
P
N
P
N
P
N
P
N
P
N
P
N
P
2.2
3.8
0.5
0.6
0.8
1.5
184
378
62
126
30
52
5
5
12
15
13
20
7
20
0.063
0.112
0.090
0.172
Ω
S
S
Dynamic
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
Fall-Time
tr
td(off)
tf
N-Channel
VDS=15V, VGS=4.5V, ID=2.7A
P-Channel
VDS=-15V, VGS=-4.5V, ID=-3.1A
N-Channel VDS = 15 V, VGS = 0 V,
f = 1MHz
P-Channel VDS=-15V, VGS=0V,
f=1MHz
N-Chaneel
VDD=15V, VGS=4.5V, ID=1A ,
RGEN=15Ω,
P-Channel
VDD=-15V, VGS=-4.5V, ID=-1A
RGEN=15Ω
5
8
1
2
2
3
400
800
200
300
200
300
10
10
30
30
30
40
20
40
nC
pF
nS
Notes
a.
Pulse test: PW <= 300us duty cycle <= 2%.
b.
Guaranteed by design, not subject to production testing.
Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or
use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and
actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by
customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed,
intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or
sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur.
Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall indemnify and hold APL and its
officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney
fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer.
2
PRELIMINARY
Publication Order Number:
DS-AM3599_F
Analog Power
AM3599C
Typical Electrical Characteristics (N-Channel)
30
15
VGS = 10V
25oC
ID -Drain Current (A)
12
4.0V
18
12
6
3.0V
125oC
9
6
3
0
0
0
1
2
3
4
5
1
2
3
VDS - Drain-to-Source Voltage (V)
4
5
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
C - Capacitance (pF)
400
4
3
2
4.5V
10V
1
300
CISS
200
COSS
100
CRSS
0
0
6
12
18
24
0
30
0
ID - Drain Current (A)
6
12
18
24
30
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
rDS(ON) - On-Resistance (Normalized)
10
VGS - Gate-to-Source Voltage ( V )
rDS(ON) - Normalized On-Resistance
ID - Drain Current (A)
TA = -55oC
4.5V
24
8
6
4
2
1.6
VGS = 10V
1.4
1.2
1
0.8
0.6
0
-50
0
1
2
3
4
-25
5
0
25
50
75
100
125
TJ - Junction Temperature (oC)
Qg - Total Gate Charge (nC)
Gate Charge
On-Resistance vs. Junction Temperature
3
PRELIMINARY
Publication Order Number:
DS-AM3599_F
150
Analog Power
AM3599C
Typical Electrical Characteristics (N-Channel)
10
rDS(ON) - On-Resistance (OHM)
IS - Source CURRENT (A
0.2
1
TA = 125oC
25oC
0.1
0.01
0.15
0.1
0.05
0
2
4
0.001
6
8
10
VGS - Gate-to-Source Voltage (V)
0
0.2
0.4
0.6
0.8
1
1.2
1.4
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs.Gate-to Source Voltage
30
1.5
ID = 250µA
Power (W)
20
1.1
0.9
10
0.7
0
0.5
0.01
-50
-25
0
25
50
75
100
125
0.1
1
150
10
Time (sec)
TJ - Temperature (oC)
1
Threshold Voltage
Single Pulse Power
D =0.5
RθJA (t) = r(t) * RθJA
0.2
0.1
Impedance
Normalized Effective Transient Thermal
VGS(th) Variance(V)
1.3
RθJA = 125 °C/W
0.1
0.05
P(pk
0.02
t1
0.01
t2
0.01
SINGLE PULSE
0.001
0.0001
TJ - TA = P *
RθJA (t)
Duty Cycle, D = t1
/t
0.001
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
4
PRELIMINARY
Publication Order Number:
DS-AM3599_F
100
Analog Power
AM3599C
Typical Electrical Characteristics (P-Channel)
5
5
VGS=-10V
T A = -55oC
-4.5V
25oC
4
ID - Drain Current (A)
ID - Drain Current (A)
4
3
2
-3.0V
1
125oC
3
2
1
0
0
0
0.5
1
1.5
2
2.5
1.5
2
2.5
V DS - Drain-to-Source Voltage (V)
3
3.5
4
V GS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
800
C - Capacitance (pF)
rDS(ON), Normalized ON-Resistance
2.5
2.0
-4.5V
1.5
600
CISS
400
COSS
200
-10V
1.0
CRSS
0
0
0.5
0
1
2
3
4
6
5
12
On-Resistance vs. Drain Current
24
30
Capacitance
1.6
rDS(ON) - On-Resistance (Normalized)
-10
VGS - Gate-to-Source Voltage ( V
18
VDS - Drai n-to-Source Vol tage (V)
ID - Drain Current (A)
-8
-6
-4
-2
VGS = -10V
1.4
1.2
1
0.8
0.6
0
0
2
4
6
8
10
-50
12
-25
0
25
50
75
100
125
o
TJ - Junction Temperature ( C)
Qg - Total Gate Charge (nC)
Gate Charge
On-Resistance vs. Junction Temperature
5
PRELIMINARY
Publication Order Number:
DS-AM3599_F
150
Analog Power
AM3599C
Typical Electrical Characteristics (P-Channel)
0.4
rDS(ON) - On-Resistance (OHM)
10
IS - Source Current (A)
1
T A = 125oC
0.1
25oC
0.01
0.001
0.0001
0.0
0.2
0.4
0.6
0.8
1.0
0.3
0.2
0.1
0
1.2
2
4
V SD, - Source-to-Drain Voltage (V)
6
8
10
V GS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs.Gate-to Source Voltage
30
2.2
ID = -250µA
20
Power (W)
V GS(th) Variance (V)
2
1.8
1.6
10
1.4
0
1.2
-50
-25
0
25
50
75
100
125
0.01
150
0.1
1
Threshold Voltage
Single Pulse Power
D =0.5
RθJA (t) = r(t) * RθJA
0.2
0.1
Impedance
Normalized Effective Transient Thermal
1
10
Time (sec)
o
TJ - Temperature ( C)
RθJA = 125 °C/W
0.1
0.05
P(pk
0.02
t1
0.01
t2
0.01
SINGLE PULSE
0.001
0.0001
TJ - TA = P *
RθJA (t)
Duty Cycle, D = t1
/t
0.001
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
6
PRELIMINARY
Publication Order Number:
DS-AM3599_F
100
Analog Power
AM3599C
Package Information
TSOP-6: 6LEAD
7
PRELIMINARY
Publication Order Number:
DS-AM3599_F