2SC1972 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2SC1972 is Designed for RF power amplifiers on VHF band mobile radio applications. FEATURES INCLUDE: • • • PACKAGE STYLE TO-220AB (COMMON EMITTER) Replaces Original 2SC1972 in Most Applications High Gain Reduces Drive Requirements Economical TO-220CE Package MAXIMUM RATINGS IC 3.5 A VCBO 35 V PDISS 25 W @ TC = 25 °C TSTG -55 °C to +175 °C θJC 6.0 °C/W CHARACTERISTICS 1 = BASE 2 = EMITTER 3 = COLLECTOR TAB = EMITTER TC = 25 °C SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 50 mA 17 V BVCBO IC = 10 mA 35 V BVEBO IE = 10 mA 4.0 V ICBO VCES = 25 V 100 µA IEBO VEB = 3.0 V 500 µA hFE VCE = 10 V 180 --- ηC POUT VCC = 13.5 V IC = 100 mA PIN = 2.5 W f =175 MHz 10 50 60 14 70 15 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. % W REV. A 1/1