BAM120 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BAM120 is Designed to operate in a collector modulated VHF Power Amplifier Applications up to 150 MHz. PACKAGE STYLE .500 4L FLG FEATURES: • ηC = 65 % typ. @ 120 W/150 MHz • PG = 9.0 dB typ. @ 120 W/150 MHz • Omnigold™ Metalization System MAXIMUM RATINGS IC 12 A VCES 60 V VEBO 4.0 V PDISS 140 W @ TC = 25 °C TJ -65 °C to +200 °C 1 = COLLECTOR 2 = BASE TSTG -65 °C to +150 °C 3 & 4 = EMITTER θJC 1.2 °C/W CHARACTERISTICS ORDER CODE: ASI10430 TC = 25 °C NONETEST CONDITIONS SYMBOL MINIMUM TYPICAL MAXIMUM UNITS BVCES IC = 20 mA 60 V BVCEO IC = 50 mA 32 V BVEBO IE = 5.0 mA 4.0 V hFE VCE = 25 V COB VCE = 27 V IC = 3.5 A 15 ηC POUT = 120 W --- f = 1.0 MHz 240 pF 9.0 65 dB f = 150 MHz PG VCC = 27 V 100 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. % REV. A 1/1