MRF426 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF426 is Designed for high gain amplifier applications up to 30 MHz. PACKAGE STYLE .380 4L FLG B FEATURES: .112 x 45° A C E • PG = 22 dB min. at 25 W/30 MHz • IMD3 = -30 dBc max. at 25 W(PEP) • Omnigold™ Metalization System • Available as matched pairs. Ø.125 NOM. FULL R J .125 B E C D E F G H I MAXIMUM RATINGS IC VCBO 3.0 A DIM MINIMUM inches / mm inches / mm 65 V A .220 / 5.59 .230 / 5.84 B .785 / 19.94 C .720 / 18.29 .730 / 18.54 D .970 / 24.64 .980 / 24.89 F .004 / 0.10 .006 / 0.15 .105 / 2.67 VCEO 35 V VEBO 4.0 V G .085 / 2.16 PDISS 70 W @ TC = 25 °C H .160 / 4.06 TJ -65 °C to +200 °C J TSTG -65 °C to +150 °C θJC 2.5 °C/W .385 / 9.78 E CHARACTERISTICS SYMBOL MAXIMUM .180 / 4.57 .280 / 7.11 I .240 / 6.10 .255 / 6.48 TC = 25 °C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 50 mA 65 V BVCEO IC = 50 mA 35 V BVEBO IE = 10 mA 4.0 V ICES VCE = 28 V hFE VCE = 5.0 V COB VCB = 30 V GP ηC VCE = 28 V IC = 1.0 A 10 f = 1.0 MHz POUT = 25 W (PEP) f = 30 MHz 10 mA 200 --- 80 pF 22 dB 35 % -30 IMD3 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. dBc REV. B 1/2 MRF426 ERROR! REFERENCE SOURCE NOT FOUND. A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. B 2/2