SD1476 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1476 is a planar transistor using diffused emitter ballasted resistors for high linearity Class AB operation in VHF and band 1 television transmitters and transposers. PACKAGE STYLE .450 BAL FLG(B) A B .120 x 45° FEATURES: FULL R C E D • Common Emitter • PG = 12 dB at 240 W/88 MHz • Omnigold™ Metalization System M .208 4X.060 R F .050 NOM. .210 G H I J K MAXIMUM RATINGS 25 A IC MAXIMUM DIM MINIMUM inches / mm inches / mm A .373 / 9.47 .385 / 9.78 VCBO 70 V VCEO 40 V VEBO 4.0 V G 1.255 / 31.88 1.265 / 32.18 PDISS 430 W @ TC = 25 °C H 1.675 / 42.55 1.685 / 42.80 I .002 / 0.05 .006 / 0.15 TJ -65 °C to +200 °C J .095 / 2.41 .105 / 2.67 K .115 / 2.92 .135 / 3.43 TSTG -65 °C to +150 °C .445 / 11.30 .457 / 11.61 θJC 0.4 °C/W .205 / 5.21 B C .120 / 3.25 .130 / 3.30 D .411 / 10.44 .421 / 10.69 E .825 / 20.96 .865 / 21.97 F .525 / 13.34 .535 / 13.59 .250 / 6.35 L CHARACTERISTICS SYMBOL L M TC = 25 °C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 50 mA 70 V BVCEO IC = 100 mA 40 V BVEBO IE = 20 mA 4.0 V ICEO VCE = 30 V hFE VCE = 5.0 V COB VCB = 28 V f = 1.0 MHz PG VCE = 32 V IC = 2 X 400 mA POUT = 240 W f = 88 MHz ηC IC = 7.0 A 10 10 mA 50 --- 220 pF 12 dB 50 % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1