BSI BS616LV8016

Very Low Power CMOS SRAM
512K X 16 bit
BS616LV8016
Pb-Free and Green package materials are compliant to RoHS
„ FEATURES
„ DESCRIPTION
y Wide VCC operation voltage : 2.4V ~ 5.5V
y Very low power consumption :
Operation current : 31mA (Max.) at 55ns
VCC = 3.0V
2mA (Max.) at 1MHz
O
Standby current : 4/8uA (Max.) at 70/85 C
Operation current : 76mA (Max.) at 55ns
VCC = 5.0V
10mA (Max.) at 1MHz
O
Standby current : 25/50uA (Max.) at 70/85 C
y High speed access time :
-55
55ns(Max.) at VCC=3.0~5.5V
-70
70ns(Max.) at VCC=2.7~5.5V
y Automatic power down when chip is deselected
y Easy expansion with CE2, CE1 and OE options
y I/O Configuration x8/x16 selectable by LB and UB pin.
y Three state outputs and TTL compatible
y Fully static operation, no clock, no refresh
y Data retention supply voltage as low as 1.5V
The BS616LV8016 is a high performance, very low power CMOS
Static Random Access Memory organized as 524,288 by 16 bits and
operates form a wide range of 2.4V to 5.5V supply voltage.
Advanced CMOS technology and circuit techniques provide both
high speed and low power features with maximum CMOS standby
O
current of 8/50uA at Vcc=3/5V at 85 C and maximum access time of
55/70ns.
Easy memory expansion is provided by an active LOW chip enable
(CE1), active HIGH chip enable (CE2) and active LOW output
enable (OE) and three-state output drivers.
The BS616LV8016 has an automatic power down feature, reducing
the power consumption significantly when chip is deselected.
The BS616LV8016 is available in DICE form and 48-ball BGA
package.
„ POWER CONSUMPTION
POWER DISSIPATION
PRODUCT
FAMILY
OPERATING
TEMPERATURE
BS616LV8016DC
BS616LV8016FC
BS616LV8016FI
STANDBY
Operating
(ICCSB1, Max)
1MHz
fMax.
4.0uA
9mA
39mA
8.0uA
10mA
40mA
VCC=3.0V
Commercial
O
O
+0 C to +70 C
25uA
Industrial
O
O
-40 C to +85 C
50uA
1MHz
VCC=3.0V
10MHz
fMax.
75mA
1.5mA
19mA
30mA
76mA
2mA
20mA
31mA
DICE
BGA-48-0912
BGA-48-0912
„ BLOCK DIAGRAM
„ PIN CONFIGURATIONS
1
2
3
4
5
6
LB
OE
A0
A1
A2
CE2
B
DQ8
UB
A3
A4
CE1
DQ0
C
DQ9
DQ10
A5
A6
DQ1
DQ2
A13
A12
A11
A10
A9
A8
A7
A6
A5
A4
VCC
DQ0
.
A
PKG TYPE
(ICC, Max)
VCC=5.0V
10MHz
VCC=5.0V
Address
1024
10
Input
Row
Buffer
Decoder
Memory Array
1024 x 8192
8192
D
E
VSS
VCC
DQ11
DQ12
A17
VSS
A7
A16
DQ3
DQ4
VSS
F
DQ14
DQ13
A14
A15
DQ5
DQ6
G
DQ15
NC
A12
A13
WE
DQ7
H
A18
A8
A9
A10
A11
.
.
.
.
.
.
.
.
.
.
.
16
16
NC
Data
Output
Buffer
Write Driver
Sense Amp
16
512
Column Decoder
DQ15
CE2
CE1
WE
OE
UB
LB
VCC
VSS
16
Data
Input
Buffer
Column I/O
9
Address Input Buffer
Control
A14 A15 A16 A17 A18 A0 A1 A2 A3
48-ball BGA top view
Brilliance Semiconductor, Inc. reserves the right to change products and specifications without notice.
R0201-BS616LV8016
1
Revision
2.4
Oct.
2008
BS616LV8016
„ PIN DESCRIPTIONS
Name
Function
A0-A18 Address Input
These 19 address inputs select one of the 524,288 x 16 bit in the RAM
CE1 Chip Enable 1 Input
CE2 Chip Enable 2 Input
CE1 is active LOW and CE2 is active HIGH. Both chip enables must be active when
data read form or write to the device. If either chip enable is not active, the device is
deselected and is in standby power mode. The DQ pins will be in the high impedance
state when the device is deselected.
The write enable input is active LOW and controls read and write operations. With the
WE Write Enable Input
chip selected, when WE is HIGH and OE is LOW, output data will be present on the
DQ pins; when WE is LOW, the data present on the DQ pins will be written into the
selected memory location.
The output enable input is active LOW. If the output enable is active while the chip is
OE Output Enable Input
selected and the write enable is inactive, data will be present on the DQ pins and they
will be enabled. The DQ pins will be in the high impendence state when OE is inactive.
LB and UB Data Byte Control Input
Lower byte and upper byte data input/output control pins.
DQ0-DQ15 Data Input/Output
Ports
16 bi-directional ports are used to read data from or write data into the RAM.
VCC
Power Supply
VSS
Ground
„ TRUTH TABLE
MODE
Chip De-selected
(Power Down)
Output Disabled
Read
Write
CE1
CE2
WE
OE
LB
UB
H
X
X
X
X
X
High Z
High Z
ICCSB, ICCSB1
X
L
X
X
X
X
High Z
High Z
ICCSB, ICCSB1
X
X
X
X
H
H
High Z
High Z
ICCSB, ICCSB1
L
H
H
H
L
X
High Z
High Z
ICC
L
H
H
H
X
L
High Z
High Z
ICC
L
L
DOUT
DOUT
ICC
H
L
High Z
DOUT
ICC
L
H
DOUT
High Z
ICC
L
L
DIN
DIN
ICC
H
L
X
DIN
ICC
L
H
DIN
X
ICC
L
L
H
H
H
L
L
X
DQ0~DQ7 DQ8~DQ15 VCC CURRENT
NOTES: H means VIH; L means VIL; X means don’t care (Must be VIH or VIL state)
R0201-BS616LV8016
2
Revision
2.4
Oct.
2008
BS616LV8016
„ ABSOLUTE MAXIMUM RATINGS (1)
SYMBOL
VTERM
TBIAS
TSTG
PARAMETER
„ OPERATING RANGE
RATING
Terminal Voltage with
Respect to GND
Temperature Under
Bias
(2)
-0.5
Storage Temperature
UNITS
RANG
AMBIENT
TEMPERATURE
V
Commercial
0 C to + 70 C
Industrial
-40 C to + 85 C
to 7.0
-40 to +125
O
C
-60 to +150
O
C
PT
Power Dissipation
1.0
W
IOUT
DC Output Current
20
mA
O
VCC
O
O
2.4V ~ 5.5V
O
2.4V ~ 5.5V
„ CAPACITANCE (1) (TA = 25OC, f = 1.0MHz)
SYMBOL PAMAMETER CONDITIONS MAX. UNITS
1. Stresses greater than those listed under ABSOLUTE
MAXIMUM RATINGS may cause permanent damage to the
device. This is a stress rating only and functional operation of
the device at these or any other conditions above those
indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
2. –2.0V in case of AC pulse width less than 30 ns.
CIN
CIO
Input
Capacitance
Input/Output
Capacitance
VIN = 0V
6
pF
VI/O = 0V
8
pF
1. This parameter is guaranteed and not 100% tested.
„ DC ELECTRICAL CHARACTERISTICS (TA = -40OC to +85OC)
PARAMETER
NAME
PARAMETER
TEST CONDITIONS
MIN.
TYP.(1)
MAX.
UNITS
2.4
--
5.5
V
0.8
V
VCC
Power Supply
VIL
Input Low Voltage
-0.5
--
VIH
Input High Voltage
2.2
--
IIL
Input Leakage Current
--
--
1
uA
ILO
Output Leakage Current
--
--
1
uA
VOL
Output Low Voltage
VCC = Max, IOL = 2.0mA
--
--
0.4
V
VOH
Output High Voltage
VCC = Min, IOH = -1.0mA
2.4
--
--
V
Operating Power Supply
CE1 = VIL and CE2 = VIH,
--
--
--
--
--
--
ICC(5)
ICC1
ICCSB
ICCSB1(6)
(2)
Current
VIN = 0V to VCC,
CE1 = VIH or CE2 = VIL
VI/O = 0V to VCC,
CE1 = VIH or CE2 = VIL or OE = VIH
IDQ = 0mA, f = FMAX
(4)
VCC=3.0V
VCC=5.0V
Operating Power Supply
CE1 = VIL and CE2 = VIH,
VCC=3.0V
Current
IDQ = 0mA, f = 1MHz
VCC=5.0V
CE1 = VIH, or CE2 = VIL,
VCC=3.0V
IDQ = 0mA
VCC=5.0V
CE1≧VCC-0.2V or CE2≦0.2V,
VCC=3.0V
VIN ≧VCC-0.2V or V IN ≦0.2V
VCC=5.0V
Standby Current – TTL
Standby Current – CMOS
--
VCC+0.3
31
(3)
V
mA
76
2
mA
10
1.0
2.0
0.8
8.0
3.5
50
mA
uA
O
1. Typical characteristics are at TA=25 C and not 100% tested.
2. Undershoot: -1.0V in case of pulse width less than 20 ns.
3. Overshoot: VCC+1.0V in case of pulse width less than 20 ns.
4. FMAX=1/tRC.
O
5. ICC (MAX.) is 30mA/75mA at VCC=3.0V/5.0V and TA=70 C.
O
6. ICCSB1(MAX.) is 4.0uA/25uA at VCC=3.0V/5.0V and TA=70 C.
R0201-BS616LV8016
3
Revision
2.4
Oct.
2008
BS616LV8016
„ DATA RETENTION CHARACTERISTICS (TA = -40OC to +85OC)
SYMBOL
PARAMETER
TEST CONDITIONS
VDR
VCC for Data Retention
ICCDR(3)
Data Retention Current
CE1≧VCC-0.2V or CE2≦0.2V,
VIN≧VCC-0.2V or VIN≦0.2V
CE1≧VCC-0.2V or CE2≦0.2V,
VIN≧VCC-0.2V or VIN≦0.2V
Chip Deselect to Data
tCDR
Retention Time
tR
MIN.
TYP. (1)
MAX.
UNITS
1.5
--
--
V
--
0.4
4.0
uA
0
--
--
ns
--
--
ns
See Retention Waveform
Operation Recovery Time
tRC
(2)
O
1. VCC=1.5V, TA=25 C and not 100% tested.
2. tRC = Read Cycle Time.
O
3. ICCDR(Max.) is 2.0uA at TA=70 C.
„ LOW VCC DATA RETENTION WAVEFORM (1) (CE1 Controlled)
Data Retention Mode
VCC
VDR≧1.5V
VCC
tCDR
tR
CE1≧VCC - 0.2V
VIH
CE1
VCC
VIH
„ LOW VCC DATA RETENTION WAVEFORM (2) (CE2 Controlled)
Data Retention Mode
VDR≧1.5V
VCC
VCC
tCDR
CE2
VCC
tR
CE2≦0.2V
VIL
VIL
„ AC TEST CONDITIONS
„ KEY TO SWITCHING WAVEFORMS
(Test Load and Input/Output Reference)
Input Pulse Levels
Vcc / 0V
Input Rise and Fall Times
1V/ns
Input and Output Timing
Reference Level
0.5Vcc
Output Load
WAVEFORM
tCLZ, tOLZ, tCHZ, tOHZ, tWHZ
CL = 5pF+1TTL
Others
CL = 30pF+1TTL
ALL INPUT PULSES
1 TTL
Output
(1)
VCC
GND
CL
90%
10%
→ ←
Rise Time:
1V/ns
90%
10%
→ ←
Fall Time:
1V/ns
INPUTS
OUTPUTS
MUST BE
STEADY
MUST BE
STEADY
MAY CHANGE
FROM “H” TO “L”
WILL BE CHANGE
FROM “H” TO “L”
MAY CHANGE
FROM “L” TO “H”
WILL BE CHANGE
FROM “L” TO “H”
DON’T CARE
ANY CHANGE
PERMITTED
CHANGE :
STATE UNKNOW
DOES NOT
APPLY
CENTER LINE IS
HIGH INPEDANCE
“OFF” STATE
1. Including jig and scope capacitance.
R0201-BS616LV8016
4
Revision
2.4
Oct.
2008
BS616LV8016
„ AC ELECTRICAL CHARACTERISTICS (TA = -40OC to +85OC)
READ CYCLE
JEDEC
PARANETER
PARAMETER
NAME
NAME
DESCRIPTION
CYCLE TIME : 55ns
(VCC=3.0~5.5V)
CYCLE TIME : 70ns
(VCC=2.7~5.5V)
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
UNITS
tAVAX
tRC
Read Cycle Time
55
--
--
70
--
--
ns
tAVQX
tAA
Address Access Time
--
--
55
--
--
70
ns
tELQV
tACS1
Chip Select Access Time
(CE1)
--
--
55
--
--
70
ns
tELQV
tACS2
Chip Select Access Time
(CE2)
--
--
55
--
--
70
ns
tBLQV
tBA
Data Byte Control Access Time
(LB, UB)
--
--
55
--
--
70
ns
tGLQV
tOE
Output Enable to Output Valid
--
--
30
--
--
35
ns
tELQX
tCLZ1
Chip Select to Output Low Z
(CE1)
10
--
--
10
--
--
ns
tELQX
tCLZ2
Chip Select to Output Low Z
(CE2)
10
--
--
10
--
--
ns
tBLQX
tBE
Data Byte Control to Output Low Z
(LB, UB)
10
--
--
10
--
--
ns
tGLQX
tOLZ
Output Enable to Output Low Z
5
--
--
5
--
--
ns
tEHQZ
tCHZ1
Chip Select to Output High Z
(CE1)
--
--
30
--
--
35
ns
tEHQZ
tCHZ2
Chip Select to Output High Z
(CE2)
--
--
30
--
--
35
ns
tBHQZ
tBDO
Data Byte Control to Output High Z (LB, UB)
--
--
30
--
--
35
ns
tGHQZ
tOHZ
Output Enable to Output High Z
--
--
25
--
--
30
ns
tAVQX
tOH
Data Hold from Address Change
10
--
--
10
--
--
ns
„ SWITCHING WAVEFORMS (READ CYCLE)
READ CYCLE 1 (1,2,4)
tRC
ADDRESS
tOH
tAA
tOH
DOUT
R0201-BS616LV8016
5
Revision
2.4
Oct.
2008
BS616LV8016
READ CYCLE 2 (1,3,4)
CE1
tACS1
CE2
DOUT
tACS2
tCLZ
tCHZ(5)
(5)
READ CYCLE 3 (1, 4)
tRC
ADDRESS
tAA
OE
tOE
tOH
tOLZ
CE1
tACS1
tCLZ1(5)
CE2
tCLZ2(5)
tACS2
tOHZ(5)
tCHZ(1,5)
tCHZ2(2,5)
tBA
LB, UB
tBE
tBDO
DOUT
NOTES:
1. WE is high in read Cycle.
2. Device is continuously selected when CE1 = VIL and CE2= VIH.
3. Address valid prior to or coincident with CE1 transition low and/or CE2 transition high.
4. OE = VIL.
5. Transition is measured ± 500mV from steady state with CL = 5pF.
The parameter is guaranteed but not 100% tested.
R0201-BS616LV8016
6
Revision
2.4
Oct.
2008
BS616LV8016
„ AC ELECTRICAL CHARACTERISTICS (TA = -40OC to +85OC)
WRITE CYCLE
JEDEC
PARANETER
PARAMETER
NAME
NAME
DESCRIPTION
CYCLE TIME : 55ns
(VCC=3.0~5.5V)
CYCLE TIME : 70ns
(VCC=2.7~5.5V)
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
UNITS
tAVAX
tWC
Write Cycle Time
55
--
--
70
--
--
ns
tAVWL
tAS
Address Set up Time
0
--
--
0
--
--
ns
tAVWH
tAW
Address Valid to End of Write
55
--
--
70
--
--
ns
tELWH
tCW
Chip Select to End of Write
55
--
--
70
--
--
ns
tBLWH
tBW
Data Byte Control to End of Write
25
--
--
30
--
--
ns
tWLWH
tWP
Write Pulse Width
30
--
--
35
--
--
ns
tWHAX
tWR1
Write Recovery Time
(CE1, WE)
0
--
--
0
--
--
ns
tWHAX
tWR2
Write Recovery Time
(CE2)
0
--
--
0
--
--
ns
tWLQZ
tWHZ
Write to Output High Z
--
--
25
--
--
30
ns
tDVWH
tDW
Data to Write Time Overlap
25
--
--
30
--
--
ns
tWHDX
tDH
Data Hold from Write Time
0
--
--
0
--
--
ns
tGHQZ
tOHZ
Output Disable to Output in High Z
--
--
25
--
--
30
ns
tWHQX
tOW
End of Write to Output Active
5
--
--
5
--
--
ns
(LB, UB)
„ SWITCHING WAVEFORMS (WRITE CYCLE)
WRITE CYCLE 1 (1)
tWC
ADDRESS
OE
tCW
CE1
(5)
CE2
(5)
tWR1(3)
(11)
tCW(11)
tWR2(3)
tBW
LB, UB
tAW
WE
tWP(2)
tAS
tOHZ(4,10)
DOUT
tDH
tDW
DIN
R0201-BS616LV8016
7
Revision
2.4
Oct.
2008
BS616LV8016
WRITE CYCLE 2 (1,6)
tWC
ADDRESS
CE1
tCW(11)
(5)
CE2
tCW(11)
tBW
(12)
LB, UB
tAW
WE
tAS
tWR(3)
tWP(2)
tWHZ(4,10)
tOW
(7)
(8)
DOUT
tDW
tDH
(8,9)
DIN
NOTES:
1. WE must be high during address transitions.
2. The internal write time of the memory is defined by the overlap of CE1 and CE2 active and
WE low. All signals must be active to initiate a write and any one signal can terminate a
write by going inactive. The data input setup and hold timing should be referenced to the
second transition edge of the signal that terminates the write.
3. tWR is measured from the earlier of CE1 or WE going high or CE2 going low at the end of
write cycle.
4. During this period, DQ pins are in the output state so that the input signals of opposite
phase to the outputs must not be applied.
5. If the CE1 low transition or the CE2 high transition occurs simultaneously with the WE low
transitions or after the WE transition, output remain in a high impedance state.
6. OE is continuously low (OE = VIL).
7. DOUT is the same phase of write data of this write cycle.
8. DOUT is the read data of next address.
9. If CE1 is low and CE2 is high during this period, DQ pins are in the output state. Then the
data input signals of opposite phase to the outputs must not be applied to them.
10.Transition is measured ± 500mV from steady state with CL = 5pF.
The parameter is guaranteed but not 100% tested.
11.tCW is measured from the later of CE1 going low or CE2 going high to the end of write.
12.The change of Read/Write cycle must accompany with CE or address toggled.
R0201-BS616LV8016
8
Revision
2.4
Oct.
2008
BS616LV8016
„ ORDERING INFORMATION
BS616LV8016
X
X
Z
YY
SPEED
55: 55ns
70: 70ns
PKG MATERIAL
G: Green, RoHS Compliant
P: Pb free, RoHS Compliant
GRADE
o
o
C: +0 C ~ +70 C
o
o
I: -40 C ~ +85 C
PACKAGE
D: DICE
F: BGA-48-0912
Note:
BSI (Brilliance Semiconductor Inc.) assumes no responsibility for the application or use of any product or circuit described herein. BSI does
not authorize its products for use as critical components in any application in which the failure of the BSI product may be expected to result
in significant injury or death, including life-support systems and critical medical instruments.
0.25±0.05
„ PACKAGE DIMENSIONS
NOTES:
1: CONTROLLING DIMENSIONS ARE IN MILLIMETERS.
1.2 Max.
2: PIN#1 DOT MARKING BY LASER OR PAD PRINT.
3: SYMBOL "N" IS THE NUMBER OF SOLDER BALLS.
SIDE VIEW
D
3.375
0.1
D1
N
D
E
D1
E1
e
48
12.0
9.0
5.25
3.75
0.75
E±0.1
2.625
E1
e
SOLDER BALL 0.35 ±0.05
VIEW A
48 mini-BGA (9mm x 12mm)
R0201-BS616LV8016
9
Revision
2.4
Oct.
2008
BS616LV8016
„ Revision History
Revision No.
History
Draft Date
2.2
Add Icc1 characteristic parameter
Improve Iccsb1 spec.
I-grade from 110uA to 50uA at 5.0V
10uA to 8.0uA at 3.0V
C-grade from 55uA to 25uA at 5.0V
5.0uA to 4.0uA at 3.0V
Jan. 13, 2006
2.3
Change I-grade operation temperature range
- from –25OC to –40OC
May. 25, 2006
2.4
Typical value of standby current is replaced by
maximum value in Featues and Description
section
Oct. 31, 2008
Remark
Remove “-: Normal” (Leaded) PKG Material in
ordering information
R0201-BS616LV8016
10
Revision
2.4
Oct.
2008