CHENMKO CHRT5993WPT

CHENMKO ENTERPRISE CO.,LTD
CHRT5993WPT
SURFACE MOUNT
NPN Silicon RF Transistor
VOLTAGE 11 Volts
CURRENT 50 mAmpere
APPLICATION
* UHF Converter
* Local Oscillator
SC-70/SOT-323
FEATURE
* Small surface mounting type. (SOT-323/SC-70)
* High Transition frquency.
(2)
(3)
(1)
1.3±0.1
CONSTRUCTION
* NPN RF Transistor
0.65
2.0±0.2
0.65
0.3±0.1
1.25±0.1
MARKING
* R01
0.8~1.1
0.05~0.2
0~0.1
0.1Min.
C (3)
CIRCUIT
2.0~2.45
(1) B
E
(2)
SC-70/SOT-323
Dimensions in millimeters
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
open emitter
−
20
V
collector-emitter voltage
open base
−
11
V
VEBO
emitter-base voltage
open collector
−
3
V
IC
collector current (DC)
−
50
mA
PC
Collector power dissipation
−
0.2
W
−50
+150
°C
−
150
°C
V CBO
collector-base voltage
V CEO
Tstg
Tj
storage temperature
junction temperature
Note
1. Transistor mounted on an FR4 printed-circuit board.
2007-05
RATING CHARACTERISTIC CURVES ( CHRT5993WPT )
CHARACTERISTICS
Tamb = 25 °C unless otherwise speciÞed.
Characteristic
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
VCE(sat)
fT
Cob
Min.
20
11
3
56
1400
-
Typ.
3200
0.8
Max.
0.5
0.5
180
0.5
1.5
Unit
V
V
V
uA
uA
V
MHz
pF
Conditions
IC= 10uA, IE= 0A
IC= 1mA, IB= 0A
IE= 10uA, IC= 0A
VCB= 10V, IE= 0A
VEB= 2V, IE= 0A
VCE= 10V, IC= 5mA
IC= 10mA, IB= 5mA
VCE= 10V, IE= -10mA
VCB= 10V, f = 1MHz, IE= 0A
RATING CHARACTERISTIC CURVES ( CHRT5993WPT )
Figure 1. Collector-Emitter Saturation
Voltage vs Collector Current
10
IC/IB=2
f=1.0MHz
COLLECTOR OUTPUT
CAPACITANCE, Cob(pF)
COLLECTOR-EMITTER SATURATION
VOLTAGE, VCEsat(mV)
1000
Figure 2. Collector-Base Voltage vs Collector
Output Capacitance
100
Ta = 25oC
10
0.1
1.0
10
100
COLLECTOR CURRENT, IC(mA)
Figure 3. DC Current Gain
DC CURRENT GAIN, hFE
VCE=10V
Ta = 25oC
100
10
1.0
10
COLLECTOR CURRENT, IC(mA)
Ta = 25oC
0.1
0.1
1.0
10
COLLECTOR-BASE VOLTAGE, VCB(V)
1000
0.1
1
100
100