COMCHIP CFRB202-G

SMD Fast Recovery Rectifiers
CFRB201-G Thru. CFRB207-G
Reverse Voltage: 50 to 1000 Volts
Forward Current: 2.0 Amp
RoHS Device
Features
DO-214AA (SMB)
-Ideal for surface mount applications.
-Easy pick and place.
0.185(4.70)
0.160(4.06)
-Plastic package has Underwriters Lab.
flammability classification 94V-0.
0.155(3.94)
0.130(3.30)
0.083(2.11)
0.075(1.91)
-Fast recovery time: 150~500nS.
-Low leakage current.
Mechanical data
0.220(5.59)
0.200(5.08)
-Case: JEDEC DO-214AA, molded plastic.
0.012(0.31)
0.006(0.15)
0.096(2.44)
0.083(2.13)
-Terminals: solderable per MIL-STD-750,
method 2026.
0.008(0.20)
0.004(0.10)
0.050(1.27)
0.030(0.76)
-Polarity: Color band denotes cathode end.
-Approx. weight: 0.093 grams
Dimensions in inches and (millimeter)
Maximum Ratings and Electrical Characteristics
Symbol
CFRB
201-G
CFRB
202-G
CFRB
203-G
CFRB
204-G
CFRB
205-G
CFRB
206-G
CFRB
207-G
Units
Max. repetitive peak reverse voltage
VRRM
50
100
200
400
600
800
1000
V
Max. DC blocking voltage
VDC
50
100
200
400
600
800
1000
V
Max. RMS voltage
VRMS
35
70
140
280
420
560
700
V
Peak surge forward current, 8.3ms
single half sine-wave superimposed
on rate load (JEDEC method)
IFSM
50
A
Max. average forward current
IO
2.0
A
Max. instantaneous forward voltage at
2.0A
VF
1.3
V
Reverse recovery time
Trr
Parameter
Max. DC reverse current at TA=25
rated DC blocking voltage TA=125
Max. thermal resistance (Note 1)
Max. operating junction temperature
Storage temperature
O
C
C
O
150
250
500
nS
IR
5.0
50
RθJL
20
TJ
150
O
C
TSTG
-55 to +150
O
C
μA
O
C/W
Notes: 1. Thermal resistance from junction to lead mounted on P.C.B. with 8.0×8.0 mm square2 (0.13mm thick) land area.
REV:A
Page 1
QW-BF003
Comchip Technology CO., LTD.
SMD Fast Recovery Rectifiers
RATING AND CHARACTERISTIC CURVES (CFRB201-G thru CFRB207-G)
Fig.1 Reverse Characteristics
Fig.2 Forward Characteristics
1000
100
10
TJ=125 OC
F o r w a rd C u rren t(A)
Rever s e C urr e n t (μA )
100
10
1
0.1
1
TJ=25 OC
Pulse width 300μS
4% duty cycle
O
TJ=25 C
0.1
0.01
0
30
60
90
120
0
150
0.8
1.6
1.2
2.0
Percent of Rated Peak Reverse Voltage (%)
Forward Voltage (V)
Fig.3 Junction Capacitance
Fig.4 Non-repetitive Forward Surge Current
140
60
Peak F or ward Surge C ur re nt A
( )
TJ=25 OC
f=1MHz
Vsig=50mVp-p
120
J u n c ti o n C apacian
t ce(p F )
0.4
100
80
60
40
20
O
TJ=25 C
8.3ms single half sine
wave, JEDEC method
50
40
30
20
10
0
0
0.1
1
10
100
1000
1
10
100
Number of Cycles at 60Hz
Reverse Voltage (V)
Fig.6 Current Derating Curve
Fig.5 Test Circuit Diagram and Reverse Recovery Time Characteristics
2.8
trr
10Ω
NONINDUCTIVE
Average Forward Current (A)
50Ω
NONINDUCTIVE
+0.5A
(+)
25Vdc
(approx.)
(-)
(-)
D.U.T.
1Ω
NONINDUCTIVE
PULSE
GENERATOR
(NOTE 2)
0
-0.25A
(+)
OSCILLLISCOPE
(NOTE 1)
NOTES: 1. Rise time=7ns max., input impedance=1 MΩ, 22pF.
2. Rise time=10ns max., input impedance=50Ω.
-1.0A
2.4
2.0
1.6
1.2
Single phase
Half wave 60Hz
0.8
0.4
0
0
1cm
Set time base for
50 / 10nS / cm
25
50
75
100
125
Ambient Temperature (
150
O
175
C)
REV:A
Page 2
QW-BF003
Comchip Technology CO., LTD.