DIOTEC PST1600M

PST1600A ... PST1600M
PST1600A ... PST1600M
Silicon Rectifier Diodes – Half Bridge
Silizium-Gleichrichterdioden– Halbbrücke
Version 2010-03-31
2.8±0.3
Ø 3.8±0.2
4
Type
Typ
0.42±0.4
16 A
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
1 2 3
±0.1
1.3
TO-220AB
Weight approx.
Gewicht ca.
1.8 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
0.8
±0.2
2.54±0.1
Standard packaging in tubes
Standard Lieferform in Stangen
Dimensions - Maße [mm]
Maximum ratings and Characteristics
Type
Typ
50...1000 V
Plastic case
Kunststoffgehäuse
3.9±0.3
13.9±0.3
1 2 3
2.67±0.2
4
8.7±0.3
4.5±0.2
14.9±0.4
1.2±0.2
Nominal current
Nennstrom
10.1±0.3
Grenz- und Kennwerte
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
VRRM [V] 1)
Surge peak reverse voltage
Stoßspitzensperrspannung
VRSM [V] 1)
Forward voltage
Durchlass-Spannung
VF [V] 1), Tj = 25°C
IF = 5 A
IF = 8 A
PST1600A
50
50
< 1.0
< 1.1
PST1600B
100
100
< 1.0
< 1.1
PST1600D
200
200
< 1.0
< 1.1
PST1600G
400
400
< 1.0
< 1.1
PST1600J
600
600
< 1.0
< 1.1
PST1600K
800
800
< 1.0
< 1.1
PST1600M
1000
1000
< 1.0
< 1.1
Max. average forward current, R-load
Dauergrenzstrom mit R-Last
TC = 100°C
TC = 100°C
IFAV
IFAV
8 A 1)
16 A 2)
Repetitive peak forward current
Periodischer Spitzenstrom
f > 15 Hz
IFRM
30 A 3)
Peak forward surge current, 50/60 Hz half sine-wave
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle
TA = 25°C
IFSM
135/150 A 1)
Rating for fusing, t < 10 ms
Grenzlastintegral, t < 10 ms
TA = 25°C
i2t
90 A2s 1)
Tj
-50...+150°C
-50...+175°C
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
1
2
3
TS
Per diode – Pro Diode
Output current when operating two devices in a full bridge configuration
Ausgangstrom bei Betrieb zweier Bauteile als Vollbrücke
Max. temperature of the case TC = 100°C – Max. Temperatur des Gehäuses TC = 100°C
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http://www.diotec.com/
1
PST1600A ... PST1600M
Characteristics
Kennwerte
Leakage current
Sperrstrom
Tj = 25°C
VR = VRRM
IR
Thermal resistance junction to case
Wärmewiderstand Sperrschicht – Gehäuse
< 10 µA
< 2.5 K/W 1)
RthC
10
2
120
[%]
[A]
100
10
80
Tj = 125°C
Tj = 25°C
1
60
40
10-1
20
IF
IFAV
0
-2
0
TC
50
100
150
[°C]
0.4
Rated forward current vs. temp. of the case
Zul. Richtstrom in Abh. v. d. Gehäusetemperatur
1
2
200a-(5a-0.95v)
10
VF
0.8
1.0
1.2
1.4
[V] 1.8
Forward characteristics (typical values)
Durchlasskennlinien (typische Werte)
Per diode – Pro Diode
http://www.diotec.com/
© Diotec Semiconductor AG