DIOTEC S15BYD2

S15AYD2 ... S15MYD2
S15AYD2 ... S15MYD2
Surface Mount Silicon Rectifier Diodes – Single Diode
Silizium-Gleichrichterdioden für die Oberflächenmontage– Einzeldiode
Version 2011-05-25
1.2
4.5
10.25
± 0.2
Nominal current
Nennstrom
±0.5
4
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
Type
Typ
1
2
1.3
TO-263AB
D2PAK
Weight approx.
Gewicht ca.
5.08
1.6 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
1
2/4
3
Standard packaging in tubes
Standard Lieferform in Stangen
Dimensions - Maße [mm]
Maximum ratings and Characteristics
Type
Typ
50...1000 V
Plastic case
Kunststoffgehäuse
3
0.8
0.4
15 A
Grenz- und Kennwerte
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
VRRM [V] 1)
Surge peak reverse voltage
Stoßspitzensperrspannung
VRSM [V] 1)
Forward voltage
Durchlass-Spannung
VF [V] Tj = 25°C
IF = 5 A
IF = 15 A
S15AYD2
50
50
< 1.0
< 1.3
S15BYD2
100
100
< 1.0
< 1.3
S15DYD2
200
200
< 1.0
< 1.3
S15GYD2
400
400
< 1.0
< 1.3
S15JYD2
600
600
< 1.0
< 1.3
S15KYD2
800
800
< 1.0
< 1.3
S15MYD2
1000
1000
< 1.0
< 1.3
Max. average forward current, R-load
Dauergrenzstrom mit R-Last
TC = 100°C
IFAV
15 A
Repetitive peak forward current
Periodischer Spitzenstrom
f > 15 Hz
IFRM
80 A 1)
Peak forward surge current, 50/60 Hz half sine-wave
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle
TA = 25°C
IFSM
400/450 A 1)
Rating for fusing, t < 10 ms
Grenzlastintegral, t < 10 ms
TA = 25°C
i2t
800 A2s 1)
Tj
-50...+150°C
-50...+175°C
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
1
TS
Max. temperature of the case TC = 100°C – Max. Temperatur des Gehäuses TC = 100°C
© Diotec Semiconductor AG
http://www.diotec.com/
1
S15AYD2 ... S15MYD2
Characteristics
Kennwerte
Leakage current
Sperrstrom
Tj = 25°C VR = VRRM
Tj = 125°C VR = VRRM
Thermal resistance junction to case
Wärmewiderstand Sperrschicht – Gehäuse
IR
IR
< 10 µA
< 100 µA
RthC
< 2.1 K/W
10
2
120
[%]
[A]
100
10
80
Tj = 125°C
Tj = 25°C
1
60
40
10-1
20
IF
IFAV
0
-2
0
TC
50
100
150
[°C]
0.4
Rated forward current vs. temp. of the case
Zul. Richtstrom in Abh. v. d. Gehäusetemperatur
2
200a-(5a-0.95v)
10
http://www.diotec.com/
VF
0.8
1.0
1.2
1.4
[V] 1.8
Forward characteristics (typical values)
Durchlasskennlinien (typische Werte)
© Diotec Semiconductor AG