ESTEK ET630

ET630
9 Amps, 200Volts
N-CHANNEL MOSFET
■
DESCRIPTION
The ET630 N-Channel enhancement mode silicon gate power
MOSFET is designed for high voltage, high speed power switching
applications such as switching regulators, switching converters,
solenoid, motor drivers, relay drivers.
■
FEATURES
* RDS(ON) = [email protected] = 10 V
* Ultra low gate charge ( typical 19 nC )
* Low reverse transfer capacitance ( CRSS = typical 80 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability
■
SYMBOL
■ ABSOLUTE MAXIMUM RATINGS(Tc=25℃,unless
PARAMETER
SYMBOL
PATINGS
UNIT
Drain-Source Voltage
VDSS
200
V
VGSS
±20
V
9
A
6.3
A
Gate-Source Voltage
Drain Currenet
Tc=25℃
Continuous
Tc=100℃
ID
Drain Current Pulsed
Repetitive(Note 2)
Avalanche Energy
Single Pulse(Note 3)
Peak Diode Recovery dv/dt(Note 4)
Total Power Dissipation
otherwise specified)
Tc=25℃
IDP
8.0
A
EAR
9
mJ
EAS
150
mJ
dv/dt
3.5
v/ns
PD
Derate above 25℃
Junction Temperature
TJ
1
88
W
51
W/℃
+150
℃
BEIJING ESTEK ELECTRONICS CO.,LTD
ET630
Storage Temperature
TSTG
℃
-55~+150
Note:1.Absolute maximum ratings are those values beyond which the device could be permanently damaged
Absolute maximum ratings are stress ratings only and functional device operation is not implied
2.Repetitive Rating:Pulse width limited bu maximum junction temperature
■
THERMAL DATA
PARAMETER
PACKAGE
SYMBOL
TO-220
Thermal Resistance Junction-Ambient
RATINGS
80
θJA
TO-220F
80
TO-220
1.67
Thermal Resistance Junction-Case
θJC
TO-220F
■
UNIT
℃/W
2.45
ELECTRICAL CHARACTERISTICS(TJ=25℃,unless Otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
BVDSS
VGS=0V,ID=250μA
MIN
TYP
MAX
UNIT
10
μA
VDS=200V,TC=125℃
100
μA
VGS=20V,VDS=0V
100
nA
VGS=-20V,VDS=0V
-100
nA
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Forward
Current
Reverse
IDSS
IGSS
△BVDSS/△TJ
ID=250μA
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250μA
Static Drain-Source On-Resistance
RDS(ON)
VDS=10V,ID=5A
Breakdown Voltage Temperature
200
V
VDS=200V,VGS=0V
0.1
V/℃
On Characteristics
2.0
0.25
4.0
V
0.4
Ω
Dynamic Characteristics
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
■
VDS=25V,VGS=0V,f=1MHZ
600
pF
250
pF
80
pF
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
30
ns
50
ns
50
ns
Switching Characteristics
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
tD(ON)
tR
tD(OFF)
tF
Total Gate Charge
QG
Gate-Source Charge
QGS
Gate-Drain Charge
QGD
VDD=100V,ID=9A,RG=9.1Ω
19
VDS=160V,VGS=10V,ID=9A
40
ns
30
nC
10
nC
9
nC
Drain-Source Diode Characteristics
Drain-Source Diode Forward Voltage
VSD
VGS=0V,ISD=9A
2
V
Continuous Drain-Source Current
ISD
9
A
Pulsed Drain-Source Current
ISM
36
A
Reverse Recovery Time
Reverse Recovery Charge
t
RR
ISD=9A,dISD/dt=100A/μs
QRR
450
ns
3
μC
Note:1.Pulse Test: Pulse Width≤300μs,Duty Cycle≤2%
2.Essentially Independent of Operating Temperature3
2
BEIJING ESTEK ELECTRONICS CO.,LTD
ET630
■
TYPICAL CHARACTERISTICS
3
BEIJING ESTEK ELECTRONICS CO.,LTD
ET630
■
TYPICAL CHARACTERISTICS (Cont.)
4
BEIJING ESTEK ELECTRONICS CO.,LTD
ET630
5
BEIJING ESTEK ELECTRONICS CO.,LTD