FMBBAS19...21 200 mW EPITAXIAL PLANAR DIODES Data Sheet Mechanical Dimensions Description .110 .060 Pin 3 Pin 1 NC .037 .115 .037 Pin 2 .016 2 3 1 .043 .016 .004 Features n PLANAR PROCESS n INDUSTRY STANDARD SOT-23 PACKAGE n 200 mW POWER DISSIPATION n MEETS UL SPECIFICATION 94V-0 Electrical Characteristics @ 25 O C. Maximum Ratings Peak Reverse Voltage...VRM RMS Reverse Voltage...VR(rms) FMBBAS19...21 Units FMBBAS19 FMBBAS20 FMBBAS21 120 10 0 200 150 250 200 Volts Volts Average Forward Rectified Current...IO ............................................. 6 2 5 ............................................... mAmps Non-Repetitive Peak Forward Surge Current...IFSM ............................................. 2.5 ............................................... Amps Forward Voltage...VF @ IF = 100 mA ............................................. 1.0 ............................................... Volts ............................................. 0.1 ............................................... µAmps Power Dissipation...PD ............................................. 2 0 0 ............................................... mW Reverse Recovery Time...tRR ............................................. 5 0 ............................................... nS Operating Temperature Range...TJ ......................................... -25 to 85 .......................................... °C Storage Temperature Range...TSTRG ......................................... -65 to 150 .......................................... DC Reverse Current...IR @ VR = 70V °C Device Under TTest est .01 uF PVV = 100nS Output Trr IF 5K Ohms 50 Ohms 0.1 IR IR RG = 50 Ohms Page 10-25