200 mW EPITAXIAL PLANAR DIODES FMBBAS16 Data Sheet Mechanical Dimensions Description .110 .060 Pin 3 Pin 1 NC .037 .115 .037 Pin 2 .016 2 3 1 .043 .016 .004 Features n PLANAR PROCESS n INDUSTRY STANDARD SOT-23 PACKAGE n 200 mW POWER DISSIPATION n MEETS UL SPECIFICATION 94V-0 Electrical Characteristics @ 25 O C. FMBBAS16 Units FMBBAS16 85 75 Volts Volts Maximum Ratings Peak Reverse Voltage...VRM RMS Reverse Voltage...VR(rms) Average Forward Rectified Current...IO ............................................. 2 1 5 ............................................... mAmps Non-Repetitive Peak Forward Surge Current...IFSM ............................................. ............................................... Amps Forward Voltage...VF @ IF = 150 mA ............................................. 1.25 ............................................... Volts ............................................. 5.0 ............................................... µAmps DC Reverse Current...IR @ VR = 75V 4 Power Dissipation...PD ............................................. 2 0 0 ............................................... mW Frequency...F ............................................. 1 0 0 ............................................... MHz Typical Junction Capacitance...CJ ............................................. 2.0 ............................................... pF Reverse Recovery Time...tRR ............................................. 4.0 ............................................... nS Operating Temperature Range...TJ ......................................... -25 to 85 .......................................... °C Storage Temperature Range...TSTRG ......................................... -65 to 150 .......................................... °C Device Under TTest est .01 uF PVV = 100nS Output 50 Ohms RG = 50 Ohms Page 10-24 Trr IF 5K Ohms IR 0.1 IR