FUJI FMV10N80E

http://www.fujisemi.com
FMV10N80E
FUJI POWER MOSFET
Super FAP-E3 series
N-CHANNEL SILICON POWER MOSFET
Features
Outline Drawings [mm]
Maintains both low power loss and low noise
Lower RDS(on) characteristic
More controllable switching dv/dt by gate resistance
Smaller VGS ringing waveform during switching
Narrow band of the gate threshold voltage (4.0±0.5V)
High avalanche durability
Equivalent circuit schematic
TO-220F(SLS)
Drain(D)
Applications
Gate(G)
Source(S)
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum Ratings and Characteristics
Absolute Maximum Ratings at Tc=25°C (unless otherwise specified)
Description
Continuous Drain Current
Pulsed Drain Current
Gate-Source Voltage
Repetitive and Non-Repetitive Maximum AvalancheCurrent
Non-Repetitive Maximum Avalanche Energy
Repetitive Maximum Avalanche Energy
Peak Diode Recovery dV/dt
Peak Diode Recovery -di/dt
Symbol
VDS
VDSX
ID
I DP
VGS
IAR
E AS
E AR
dV/dt
-di/dt
Maximum Power Dissipation
PD
Operating and Storage Temperature range
Tch
Tstg
Drain-Source Voltage
Characteristics
800
800
±10
±40
±30
10
572.4
8.5
2.1
100
2.16
85
150
-55 to + 150
Unit
V
V
A
A
V
A
mJ
mJ
kV/µs
A/µs
Remarks
VGS = -30V
Note*1
Note*2
Note*3
Note*4
Note*5
Ta=25°C
Tc=25°C
W
°C
°C
Electrical Characteristics at Tc=25°C (unless otherwise specified)
Static Ratings
Description
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Symbol
BVDSS
VGS (th)
Zero Gate Voltage Drain Current
I DSS
Gate-Source Leakage Current
Drain-Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
I GSS
R DS (on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
Q GS
Q SW
Q GD
IAV
VSD
trr
Qrr
Turn-On Time
Turn-Off Time
Total Gate Charge
Gate-Source Charge
Drain-Source Crossover Charge
Gate-Drain Charge
Avalanche Capability
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge
Conditions
I D =250µA, VGS=0V
I D =250µA, VDS=VGS
VDS=800V, VGS=0V
VDS=640V, VGS=0V
VGS=±30V, VDS=0V
I D =5.0A, VGS=10V
I D =5.0A, VDS=25V
Tch=25°C
Tch=125°C
VDS=25V
VGS=0V
f=1MHz
Vcc =600V
VGS=10V
I D =5.0A
RG=24Ω
Vcc =450V
I D =10A
VGS=10V
See Fig.5
L=4.20mH, Tch=25°C
I F=10A, VGS=0V, Tch=25°C
I F=10A, VGS=0V
-di/dt=100A/µs, Tch=25°C
min.
800
3.5
5.0
10
-
typ.
4.0
10
0.9
10
1650
165
11
34
32
105
30
50
14
6
17
0.90
1.8
15
max.
4.5
25
250
100
1.1
2500
250
17
51
48
160
45
75
21
9
26
1.35
-
Unit
V
V
min.
typ.
max.
0.862
50.0
Unit
°C/W
°C/W
µA
nA
Ω
S
pF
ns
nC
A
V
µS
µC
Thermal Characteristics
Description
Thermal resistance
Symbol
Rth (ch-c)
Rth (ch-a)
Note *1 :Tch≤150°C.
Note *2 :Stating Tch=25°C, IAS=4.0A, L=65.6mH, Vcc=80V, RG =10Ω,
E AS limited by maximum channel temperature and avalanche current.
Test Conditions
Channel to case
Channel to ambient
Note *3 :Repetitive rating : Pulse width limited by maximum channel temperature.
Note *4 :I F ≤-I D, -di/dt=100A/µs, Vcc≤BVDSS, Tch≤150°C.
Note *5 :I F ≤-I D, dv/dt=2.1kV/µs, Vcc≤BVDSS, Tch≤150°C.
1
FMV10N80E
120
FUJI POWER MOSFET
http://www.fujisemi.com
Safe Operating Area
ID=f(VDS):Duty=0(Singlepulse), Tc=25°c
Allowable Power Dissipation
PD=f(Tc)
10
2
t=
1µs
100
10
1
10µs
80
60
ID [A]
PD [W]
100µs
10
0
1ms
40
10
Po we r loss wavefo rm :
Sq uare wa veform
-1
20
PD
t
0
10
0
25
50
75
Tc [°C]
100
125
150
-2
10
-1
10
0
1
10
VDS [V]
10
2
10
3
Typical Transfer Characteristic
ID=f(VGS):80µs pulse test, VDS=25V, Tch=25°C
Typical Output Characteristics
ID=f(VDS):80µs pulse test, Tch=25°C
20
100
20V
10V
7.0V
15
ID[A]
ID [A]
10
10
1
6.0V
5
VGS=5.5V
0.1
0
0
4
8
12
VDS [V]
16
20
0
24
Typical Transconductance
gfs=f(ID):80µs pulse test, VDS=25V, Tch=25°C
1
2
3
4
5
VGS [V]
6
7
8
9
10
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80µs pulse test, Tch=25°C
100
2.4
VGS=5.5V
6V
2.0
RDS(on) [Ω]
gfs [S]
10
1
1.6
7V
10V
20V
1.2
0.8
0.1
0.1
1
10
0
100
ID [A]
2
2
4
6
8
10
ID [A]
12
14
16
18
FMV10N80E
FUJI POWER MOSFET
http://www.fujisemi.com
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS, ID=250µA
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=5.0A, VGS=10V
3.5
8
7
3.0
6
VGS(th) [V]
RDS(on) [Ω]
2.5
2.0
5
max.
typ.
4
1.5
min.
3
max.
1.0
typ.
2
0.5
1
0.0
-50
-25
0
25
50
75
100
125
0
150
-50
Tch [°C]
0
25
50
75
100
125
Typical Capacitance
C=f(VDS):VGS=0V, f=1MHz
14
10
4
10
3
10
2
Vcc= 160V
400V
640V
12
Ciss
10
C [pF]
8
6
Coss
4
10
1
Crss
2
0
10
0
10
20
30
40
Qg [nC]
50
60
70
0
10
80
-2
10
-1
10
0
10
1
10
2
VDS [V]
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=600V, VGS=10V, RG=24Ω
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80µs pulse test, Tch=25°C
100
10
3
tf
10
td(off)
10
2
td(on)
t [ns]
IF [A]
150
Tch [°C]
Typical Gate Charge Characteristics
VGS=f(Qg):ID=10A, Tch=25°C
VGS [V]
-25
1
tr
10
1
10
0
0.1
0.01
0.00
0.25
0.50
0.75
VSD [V]
1.00
1.25
10
1.50
-1
10
0
10
ID [A]
3
1
10
2
FMV10N80E
FUJI POWER MOSFET
http://www.fujisemi.com
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=80V, I(AV)<=10A
600
IAS=4.0A
500
Transient Thermal Impedance
Zth(ch-c)=f(t):D=0
10
1
10
0
IAS=6.0A
300
Zth(ch-c) [℃/W]
EAV [mJ]
400
IAS=10A
200
100
0
0
25
50
75
100
125
10
-1
10
-2
10
-3
15 0
10
-6
10
-5
10
-4
10
-3
t [sec]
startingTch [°C]
4
10
-2
10
-1
10
0
FMV10N80E
FUJI POWER MOSFET
http://www.fujisemi.com
WARNING
1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of March 2010.
The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this
Catalog, be sure to obtain the latest specifications.
2. A
ll applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either
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warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which
may arise from the use of the applications described herein.
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become faulty. It is recommended to make your design fail-safe, flame retardant, and free of malfunction.
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