http://www.fujisemi.com FMV24N25G FUJI POWER MOSFET Super FAP-G series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Equivalent circuit schematic TO-220F(SLS) Drain(D) Applications Gate(G) Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Source(S) Maximum Ratings and Characteristics Absolute Maximum Ratings at Tc=25°C (unless otherwise specified) Description Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum AvalancheCurrent Non-Repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Symbol VDS VDSX ID I DP VGS IAR E AS dVds/dt dV/dt Maximum Power Dissipation PD Drain-Source Voltage Tch Tstg VISO Operating and Storage Temperature range Isolation Characteristics 250 220 ±24 ±96 ±30 24 192 20 5 2.16 65 150 -55 to +150 2 Unit V V A A V A mJ kV/µs kV/µs Remarks VGS = -30V Note*1 Note*2 VDS=≤200V Note*3 Ta=25°C Tc=25°C W °C °C KVrms t=60sec, f=60Hz Electrical Characteristics at Tc=25°C (unless otherwise specified) Static Ratings Description Drain-Source Breakdown Voltage Gate Threshold Voltage Symbol BVDSS VGS (th) Zero Gate Voltage Drain Current I DSS Gate-Source Leakage Current Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance I GSS R DS (on) gfs Ciss Coss Crss td(on) tr td(off) tf QG Q GS Q GD IAV VSD trr Qrr Turn-On Time Turn-Off Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Conditions I D =250µA, VGS=0V I D =250µA, VDS=VGS VDS=250V, VGS=0V VDS=200V, VGS=0V VGS=±30V, VDS=0V I D =12A, VGS=10V I D =12A, VDS=25V VDS=75V VGS=0V f=1MHz Vcc =72V VGS=10V I D =12A RG=10Ω Vcc =72V I D =24A VGS=10V L=560uH, Tch=25°C I F=24A, VGS=0V, Tch=25°C I F=24A, VGS=0V -di/dt=100A/µs, Tch=25°C Tch=25°C Tch=125°C min. 250 3.0 8 24 - typ. 10 0.11 16 1150 200 13 27 22 35 14 36 14.5 11.5 1.0 0.23 2.5 max. 5.0 25 250 100 0.13 1725 300 19.5 40.5 33 52.5 21 54 21.8 17.3 1.5 - Unit V V min. typ. max. 1.923 58.0 Unit °C/W °C/W µA nA Ω S pF ns nC A V µS µC Thermal Characteristics Description Channel to Case Channel to Ambient Symbol Rth (ch-c) Rth (ch-a) Note *1 :Tch≤150°C Note *2 :Stating Tch=25°C, IAS=A, L=560uH, Vcc=48V, RG =50Ω, E AS limited by maximum channel temperature and avalanche current. Note *3 :I F ≤-I D, -di/dt=50A/µs, Vcc≤BVDSS, Tch≤150°C. 1 FMV24N25G FUJI POWER MOSFET http://www.fujisemi.com AllowablePowerDissipation PD=f(Tc) 80 50 Typical Output Characteristics ID=f(VDS):80µs pulse test, Tch=25˚C 20V 10V 70 8.0V 40 60 7.5V 30 ID [A] PD [W] 50 40 7.0V 20 30 20 6.5V 10 VGS=6.0V 10 0 0 0 25 50 75 Tc [˚ C] 100 125 0 150 4 6 8 10 VDS [V] Typical Transconductance gfs=f(ID):80 µs pulse test, VDS=25V, Tch=25˚C Typical Transfer Characteristic ID=f(VGS):80µs pulse test, VDS=25V, Tch=25˚C 10 gfs[S] ID[A] 10 1 1 0.1 0.1 0 0.30 1 2 3 4 5 VGS[V] 6 7 8 9 0.1 10 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80µs pulse test, Tch=25˚C VGS=6.0V 6.5V 0.4 1 10 ID [A] Drain-Source On-state Resistance RDS(on)=f(Tch):ID=12.0A, VGS=10V 7.0V 0.25 0.3 7.5V RDS(on) [ Ω ] RDS(on) [ Ω ] 2 0.20 8.0V 0.15 10V 20V 0.2 max. typ. 0.1 0.10 0.0 10 20 30 -50 40 ID [A] 2 -25 0 25 50 Tch [˚ C] 75 100 125 150 FMV24N25G FUJI POWER MOSFET http://www.fujisemi.com Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS, ID=250µA 7.0 14 Typical Gate Charge Characteristics VGS=f(Qg):ID=24.0A, Tch=25˚C 6.5 12 6.0 5.5 10 max. Vcc=72V 4.5 4.0 8 VGS [V] VGS(th) [V] 5.0 3.5 3.0 min. 6 2.5 4 2.0 1.5 2 1.0 0.5 0 0.0 -50 -25 0 25 50 75 Tch [˚ C] 100 125 150 0 10 20 30 40 50 Qg [nC] Typical Capacitance C=f(VDS):VGS=0V, f=1MHz Typical Forward Characteristics of Reverse Diode IF=f(VSD):80µspulsetest, Tch=25˚C 4 10 100 Ciss 3 10 Coss 2 10 IF [A] C [pF] 10 1 1 10 Crss 0 10 -1 0 10 1 10 0.1 0.00 2 10 10 0.25 0.50 0.75 VDS [V] 1.00 1.25 1.50 1.75 2.00 VSD [V] Typical Switching Characteristics vs. ID t=f(ID):Vcc=72V, VGS=10V, RG=10Ω Maximum Avalanche Energy vs. starting Tch E(AV)=f(startingTch):Vcc=48V, I(AV)<=24.0A 600 tf 500 IAS=24.0A td(off) 2 10 400 EAV [mJ] t [ns] td(on) tr IAS=14.4A 300 1 10 IAS=9.6A 200 100 0 0 10 -1 10 0 1 10 0 10 25 50 75 starting Tch [˚ C] ID [A] 3 100 125 150 FMV24N25G FUJI POWER MOSFET http://www.fujisemi.com Maximum Avalanche Current Pulse width IAV=f(tAV):startingTch=25˚C,Vcc=48V Transient Thermal Impedance Zth(ch-c)=f(t):D=0 2 101 10 Single Pulse 1 100 Zth(ch-c) [˚C/W] Avalanche CurrentIAV [A] 10 0 10 -1 10-2 10 -2 10-3 10 10-8 10-1 10-7 10-6 10-5 10-4 10-3 10-2 10-6 tAV [sec] 10-5 10-4 10-3 t [sec] 4 10-2 10-1 100 FMV24N25G FUJI POWER MOSFET http://www.fujisemi.com WARNING 1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of March 2010. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sure to obtain the latest specifications. 2. A ll applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Systems Co., Ltd. is (or shall be deemed) granted. Fuji Electric Systems Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3. A lthough Fuji Electric Systems Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design fail-safe, flame retardant, and free of malfunction. 4. T he products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements. • Computers • OA equipment • Communications equipment (terminal devices) • Measurement equipment • Machine tools • Audiovisual equipment • Electrical home appliances • Personal equipment • Industrial robots etc. 5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Electric Systems Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment becomes faulty. • Transportation equipment (mounted on cars and ships) • Trunk communications equipment • Traffic-signal control equipment • Gas leakage detectors with an auto-shut-off feature • Emergency equipment for responding to disasters and anti-burglary devices • Safety devices • Medical equipment 6. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without limitation). • Space equipment • Aeronautic equipment • Nuclear control equipment • Submarine repeater equipment 7. Copyright ©1996-2008 by Fuji Electric Systems Co., Ltd. All rights reserved. No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Systems Co., Ltd. 8. If you have any question about any portion in this Catalog, ask Fuji Electric Systems Co., Ltd. or its sales agents before using the product. Neither Fuji Electric Systems Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions set forth herein. 5