HAMAMATSU G10899-01K

InGaAs PIN photodiodes
G10899 series
Wide spectral response range (0.5 to 1.7 μm)
The G10899 series is an InGaAs PIN photodiode that covers a wide spectral response range from 0.5 μm to 1.7 μm. While standard InGaAs PIN photodiodes have spectral response ranging from 0.9 μm to 1.7 μm, the G10899 series has sensitivity extending
to 0.5 μm on the shorter wavelength side. A wide range of spectrum can be detected with a single detector. The G10899 series
also features low noise and low dark current.
Features
Applications
Wide spectral response range
Spectroanalysis
Low noise, low dark current
Thermometer
Large active area available
Specifications / absolute maximum ratings
Type no.
G10899-003K
G10899-005K
G10899-01K
G10899-02K
G10899-03K
Window material
Package
Reverse
voltage
VR
(V)
Active area
(mm)
φ0.3
φ0.5
φ1
φ2
φ3
TO-18
Borosilicate glass
TO-5
Absolute maximum ratings
Forward
Operating
temperature
current
If
Topr
(mA)
(°C)
Storage
temperature
Tstg
(°C)
5
10
-40 to +85
-55 to +125
2
Electrical and optical characteristics (Ta=25 °C)
Type no.
G10899-003K
G10899-005K
G10899-01K
G10899-02K
G10899-03K
Photo sensitivity
Spectral
Peak
S
response sensitivity
λ=λp
range wavelength λ=0.65 μm λ=0.85 μm λ=1.3 μm
λ
λp
Min. Typ. Min. Typ. Min. Typ. Min. Typ.
(μm)
(μm) (A/W) (A/W) (A/W) (A/W) (A/W) (A/W) (A/W) (A/W)
0.5 to 1.7
1.55
0.15 0.22 0.35 0.45 0.8
0.9 0.85
1
Dark
Cut-off Terminal
current frequency capacitance Shunt
D*
resistance
ID
Ct
fc
λ=λp
Rsh
VR=1 V VR=1 V VR=1 V
VR=10 mV
Typ. Max. RL=50 Ω f=1 MHz
(nA) (nA) (MHz)
(pF)
(MΩ) (cm・Hz1/2/W)
0.3 1.5
300
10
1000
0.5 2.5
150
20
300
5 × 1012
1
5
45
70
100
5
25
10
300
25
15 75
5
600
10
NEP
λ=λp
(W/Hz1/2)
5 × 10-15
9 × 10-15
2 × 10-14
4 × 10-14
6 × 10-14
The G10899 series may be damaged by electrostatic discharge, etc. Be careful when using the G10899 series.
www.hamamatsu.com
1
InGaAs PIN photodiodes
G10899 series
Spectral response
Photo sensitivity temperature characteristic
(Typ. Ta=25 °C)
1.2
(Typ. Ta=25 °C)
2
Temperature coefficient (%/°C)
G10899 series
Photo sensitivity (A/W)
1.0
InGaAs PIN
photodiode
(standard type)
0.8
0.6
Si photodiode
S1337-BQ
0.4
0.2
0
0.19
Si photodiode S1337-BR
0.4
0.6
0.8
1.2
1.0
1.4
1.6
1.5
1
0.5
0
-0.5
-1
0.2
1.8
0.4
0.6
0.8
1.0
1.2
1.4
1.8
Wavelength (µm)
Wavelength (µm)
KIRDB0408EA
KIRDB0409EA
Dark current vs. reverse voltage
Terminal capacitance vs. reverse voltage
(Typ. Ta=25 °C)
1 µA
1.6
(Typ. Ta=25 °C, f=1 MHz)
10 nF
G10899-03K
100 nA
G10899-03K
G10899-02K
Terminal capacitance
G10899-01K
Dark current
10 nA
1 nA
G10899-003K
100 pA
1 nF
G10899-02K
100 pF
G10899-005K
G10899-01K
10 pF
G10899-005K
10 pA
G10899-003K
1 pA
0.01
0.1
1
10
100
Reverse voltage (V)
1 pF
0.01
0.1
1
10
100
Reverse voltage (V)
KIRDB0414EC
KIRDB0410EC
2
InGaAs PIN photodiodes
G10899 series
Shunt resistance vs. ambient temperature
(Typ.)
1 TΩ
100 GΩ
G10899-003K
G10899-005K
Shunt resistance
10 GΩ
G10899-01K
1 GΩ
100 MΩ
10 MΩ
G10899-02K
1 MΩ
G10899-03K
100 kΩ
-40
-20
0
20
40
60
80
100
Ambient temperature (°C)
KIRDB0411EC
Dimensional outlines (unit: mm)
G10899-003K/-005K/-01K
5.4 ± 0.2
2.7 ± 0.2
Window
3.0 ± 0.1
13 Min.
Photosensitive
surface
3.6 ± 0.2
4.7 ± 0.1
0.45
lead
2.5 ± 0.2
Case
KIRDA0150EA
3
InGaAs PIN photodiodes
G10899 series
G10899-02K/-03K
9.2 ± 0.2
4.2 ± 0.2
0.45
lead
18 Min.
Photosensitive
surface
2.5 ± 0.2
Window
5.9 ± 0.1
0.4 Max.
0.15 Max.
8.1 ± 0.1
5.1 ± 0.3
1.5 Max.
Case
KIRDA0151EA
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein.
Type numbers of products listed in the specification sheets or supplied as samples may have a suffix “(X)” which means tentative specifications or a suffix “(Z)”
which means developmental specifications. ©2010 Hamamatsu Photonics K.K.
www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Cat. No. KIRD1109E02 Jun. 2010 DN
4