PHOTODIODE Si photodiode S1226 series For UV to visible, precision photometry; suppressed IR sensitivity Features Applications l High UV sensitivity: QE 75 % (λ=200 nm) l Suppressed IR sensitivity l Low dark current l High reliability l Analytical equipment l Optical measurement equipment, etc. ■ General ratings / absolute maximum ratings Type No. S1226-18BQ S1226-18BK S1226-5BQ S1226-5BK S1226-44BQ S1226-44BK S1226-8BQ S1226-8BK Dimensional outline/ Window material * ➀/Q ➀/K ➁/Q ➁/K ➁/Q ➁/K ➂/Q ➂/K Package Active area size Effective active area (mm) (mm) (mm2) TO-18 1.1 × 1.1 1.2 2.4 × 2.4 5.7 3.6 × 3.6 13 5.8 × 5.8 33 TO-5 TO-8 Absolute maximum ratings Operating Storage Reverse temperature temperature voltage Topr Tstg VR Max. (V) (°C) (°C) -20 to +60 -55 to +80 -40 to +100 -55 to +125 -20 to +60 -55 to +80 -40 to +100 -55 to +125 5 -20 to +60 -55 to +80 -40 to +100 -55 to +125 -20 to +60 -55 to +80 -40 to +100 -55 to +125 ■ Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted) Type No. Spectral response range λ Peak sensitivity wavelength λp Short circuit Dark current current Isc ID 100 lx V =10 m V R He-Ne Min. Typ. Max. laser Photo sensitivity S (A/W) λp 200 nm Min. Typ. 633 nm (nm) (nm) 190 to 1000 S1226-18BQ 0.10 0.12 320 to 1000 S1226-18BK 190 to 1000 S1226-5BQ 0.10 0.12 320 to 1000 S1226-5BK 190 to 1000 720 0.36 0.10 0.12 0.34 S1226-44BQ 320 to 1000 S1226-44BK 190 to 1000 S1226-8BQ 0.10 0.12 320 to 1000 S1226-8BK * Window material, K: borosilicate glass, Q: quartz glass (µA) (µA) (pA) Terminal Temp. Rise time capaci- Shunt coeffitr tance resistance cient NEP VR=0 V Ct Rsh of ID V =10 mV R RL=1 kΩ VR=0 V TCID f=10 kHz Min. Typ. (times/° C) (µs) (pF) (GΩ) (GΩ) (W/Hz1/2) 0.5 0.66 2 0.15 35 5 50 1.6 × 10-15 2.2 2.9 5 0.5 160 2 20 2.5 × 10-15 4.4 5.9 10 1 380 1 10 3.6 × 10-15 12 16 20 2 950 1.12 0.5 5 5.0 × 10-15 1 S1226 series Si photodiode ■ Spectral response ■ Photo sensitivity temperature characteristic (Typ. Ta =25 ˚C) PHOTO SENSITIVITY (A/W) 0.6 0.5 0.4 0.3 S1226-BQ 0.2 0.1 S1226-BK 0 190 400 600 800 (Typ. ) +1.5 TEMPERATURE COEFFICIENT (%/˚C) 0.7 +1.0 +0.5 0 -0.5 190 1000 WAVELENGTH (nm) 400 600 800 1000 WAVELENGTH (nm) KSPDB0106EA ■ Rise time vs. load resistance ■ Dark current vs. reverse voltage (Typ. Ta=25 ˚C, VR=0 V) 1 ms 100 µs (Typ. Ta=25 ˚C) 1 nA S1226-8BQ/BK DARK CURRENT 100 pA S1226-44BQ/BK RISE TIME KSPDB0030EA 10 µs 1 µs S1226-18BQ/BK S1226-44BQ/BK 10 pA S1226-8BQ/BK 1 pA S1226-5BQ/BK S1226-18BQ/BK 100 ns S1226-5BQ/BK 10 ns 102 103 104 105 KSPDB0107EA ■ Shunt resistance vs. ambient temperature (Typ. VR=10 mV) S1226-18BQ/BK, -5BQ/BK SHUNT RESISTANCE 100 GΩ 10 GΩ S1226-44BQ/BK 1 GΩ 100 MΩ 10 MΩ S1226-8BQ/BK 1 MΩ 100 kΩ 10 kΩ -20 0 20 40 60 80 AMBIENT TEMPERATURE (˚C) KSPDB0109EA 2 0.1 1 10 DARK CURRENT LOAD RESISTANCE (Ω) 1 TΩ 100 fA 0.01 KSPDB0108EB Si photodiode S1226 series ■ Dimensional outlines (unit: mm) ➀ S1226-18BQ/-18BK ➁ S1226-5BQ/K, S1226-44BQ/K 5.4 ± 0.2 9.1 ± 0.2 PHOTOSENSITIVE SURFACE 2.4 0.45 LEAD 14 0.45 LEAD 4.1 ± 0.2 20 PHOTOSENSITIVE SURFACE 8.1 ± 0.1 2.9 4.7 ± 0.1 WINDOW 5.9 ± 0.1 3.6 ± 0.2 WINDOW 3.0 ± 0.2 5.08 ± 0.2 2.54 ± 0.2 CONNECTED TO CASE CONNECTED TO CASE The K type borosilicate glass window may extend a maximum of 0.2 mm above the upper surface of the cap. KSPDA0113EB KSPDA0114EA ➂ S1226-8BQ/-8BK 13.9 ± 0.2 5.0 ± 0.2 12.35 ± 0.1 1.9 PHOTOSENSITIVE SURFACE 0.45 LEAD 15 WINDOW 10.5 ± 0.1 7.5 ± 0.2 MARK ( 1.4) CONNECTED TO CASE The K type borosilicate glass window may extend a maximum of 0.2 mm above the upper surface of the cap. KSPDA0115EA Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2004 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, http://www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Cat. No. KSPD1034E04 Aug. 2004 DN 3