PHOTODIODE InGaAs PIN photodiode G8422/G8372/G5852 series Long wavelength type (up to 2.1 µm) Features Applications l Cut-off wavelength: 2.1 µm l 3-pin TO-18 package: low price l TE-cooled type TO-8 package: low dark current l Active area: f0.3 to f3 mm l Gas analyzer l Water content analyzer l NIR (Near Infrared) photometry ■ Specifications / Absolute maximum ratings Type No. G8422-03 G8422-05 G8372-01 G8372-03 G5852-103 G5852-11 G5852-13 G5852-203 G5852-21 G5852-23 Dim ensional Package outline Active area Cooling ➀ TO-18 ➁ TO-5 ➂ TO-8 One-stage TE-cooled TO-8 Two-stage TE-cooled ➃ (mm) φ0.3 φ0.5 φ1 φ3 φ0.3 φ1 φ3 φ0.3 φ1 φ3 Non-cooled Absolute maximum ratings Thermistor TE-cooler Reverse Operating Storage power allowable voltage temperature temperature dissipation Topr current Tstg VR (mW) (A) (V) (°C) (°C) - - -40 to +85 -55 to +125 -40 to +70 -55 to +85 2 1.5 0.2 1.0 ■ Electrical and optical characteristics (Typ. unless otherwise noted) Type No. G8422-03 G8422-05 G8372-01 G8372-03 G5852-103 G5852-11 G5852-13 G5852-203 G5852-21 G5852-23 M easurem ent Spectral Peak Photo condition response sensitivity sensitivity Element range w avelen gth S Tem perature λ λp λ=λp T (°C) (µm) 25 0.9 to 2.1 -10 0.9 to 2.07 -20 0.9 to 2.05 (µm) (A/W) 1.95 1.2 Dark current ID VR=1 V Typ. Max. (nA) (nA) 55 550 125 1250 500 5000 5 (µA) 50 (µA) 5.5 55 50 500 500 5000 3 30 25 250 250 2500 Cut-off freq uenc y fc VR=1 V RL=50 Ω (MHz) 100 80 40 3 100 40 3 100 40 3 Terminal Shunt capacitance resistance Ct Rsh VR=1 V V R = 10 m V f=1 MHz (pF) 8 20 80 800 8 80 800 8 80 800 (MΩ) 0.9 0.3 0.1 0.01 9 1 0.1 18 2 0.2 D∗ λ=λp NEP λ=λp (cm ·H z 1/2 /W ) (W/Hz1/2) 1.5 × 10-13 2.5 × 10-13 2.5 × 1011 4 × 10-13 1.5 × 10-12 5 × 10-14 11 8 × 10 1 × 10-13 4 × 10-13 3 × 10-14 12 1.2 × 10 8 × 10-14 3 × 10-13 1 InGaAs PIN photodiode ■ Spectral response G8422/G8372/G5852 series ■ Photo sensitivity temperature characteristic (Typ.) (Typ.) 1.4 T=25 ˚C 1.2 PHOTO SENSITIVITY (A/W) TEMPERATURE COEFFICIENT (%/˚C) 2 1.0 0.8 0.6 0.4 T= -20 ˚C 0.2 T= -10 ˚C 0 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 1 0 -1 0.8 2.4 1 1.2 1.6 1.4 WAVELENGTH (µm) 2 1.8 2.2 2.4 2.6 WAVELENGTH (µm) KIRDB0226EA KIRDB0207EA ■ Dark current vs. reverse voltage Non-cooled type (Typ. Ta=25 ˚C) 100 µA (Typ.) 1 µA G8372-03 10 µA G5852-13 (T= -10 ˚C) 100 nA 1 µA DARK CURRENT DARK CURRENT TE-cooled type G8372-01 G8422-05 100 nA G5852-23 (T= -20 ˚C) G5852-11 (T= -10 ˚C) G5852-21 (T= -20 ˚C) 10 nA G5852-103 (T= -10 ˚C) 1 nA G5852-203 (T= -20 ˚C) G8422-03 10 pA 0.01 0.1 1 100 pA 0.01 10 0.1 REVERSE VOLTAGE (V) 1 10 REVERSE VOLTAGE (V) KIRDB0235EA ■ Terminal capacitance vs. reverse voltage KIRDB0228EA ■ Shunt resistance vs. element temperature (Typ. Ta=25 ˚C, f=1 MHz) 10 nF (Typ. VR=10 mV) 10 MΩ G8422-03 G5852-103/-203 1 MΩ 1 nF SHUNT RESISTANCE TERMINAL CAPACITANCE G8372-03 G5852-13/-23 G8372-01 G5852-11/-21 100 pF 10 pF G8422-05 0.1 1 10 REVERSE VOLTAGE (V) 10 kΩ G8372-03 G5852-13/-23 100 Ω -40 -20 0 20 40 60 80 90 100 ELEMENT TEMPERATURE (˚C) KIRDB0236EA 2 G8372-01 G5852-11/-21 100 kΩ 1 kΩ G8422-03 G5852-103/-203 1 pF 0.01 G8422-05 KIRDB0237EA InGaAs PIN photodiode ■ Thermistor temperature characteristic 40 ELEMENT TEMPERATURE (˚C) RESISTANCE (Ω) ■ Cooling characteristics of TE-cooler (Typ.) 106 105 104 10 G8422/G8372/G5852 series 3 20 ONE-STAGE TE-COOLED TYPE 0 -20 -20 0 20 TWO-STAGE TE-COOLED TYPE -40 -60 -40 (Typ. Ta=25 ˚C, Thermal resistance of heatsink=3 ˚C/W) 0 0.4 0.8 1.2 1.6 CURRENT (A) ELEMENT TEMPERATURE (˚C) KIRDB0116EA KIRDB0231EA ■ Current vs. voltage characteristics of TE-cooler 1.6 (Typ. Ta=25 ˚C, Thermal resistance of heatsink=3 ˚C/W) 1.4 CURRENT (A) 1.2 ONE-STAGE TE-COOLED TYPE 1.0 0.8 0.6 TWO-STAGE TE-COOLED TYPE 0.4 0.2 0 0 0.5 1.0 1.5 VOLTAGE (V) KIRDB0115EA 3 InGaAs PIN photodiode G8422/G8372/G5852 series ■ Dimensional outline (unit: mm) 3.6 ± 0.2 2.7 ± 0.2 0.45 LEAD PHOTOSENSITIVE SURFACE 13 MIN. PHOTOSENSITIVE SURFACE 0.45 LEAD 4.2 ± 0.2 8.1 ± 0.1 WINDOW 5.9 ± 0.1 2.5 ± 0.2 9.2 ± 0.2 4.7 ± 0.1 WINDOW 3.0 ± 0.1 0.15 MAX. 5.4 ± 0.2 18 MIN. ➁ G8372-03 0.4 MAX. ➀ G8422-03/-05, G8372-01 5.1 ± 0.3 2.5 ± 0.2 1.5 MAX. CASE CASE KIRDA0150EA ➂ G5852-103/-11/-13 KIRDA0151EA ➃ G5852-203/-21/-23 15.3 ± 0.2 PHOTOSENSITIVE SURFACE 6.7 ± 0.2 4.4 ± 0.2 0.45 LEAD 12 MIN. PHOTOSENSITIVE SURFACE 0.45 LEAD 12 MIN. WINDOW 10 ± 0.2 6.4 ± 0.2 14 ± 0.2 WINDOW 10 ± 0.2 10 ± 0.2 15.3 ± 0.2 14 ± 0.2 5.1 ± 0.2 10.2 ± 0.2 10.2 ± 0.2 DETECTOR ELEMENT (ANODE) DETECTOR ELEMENT (CATHODE) TE-COOLER (-) TE-COOLER (+) THERMISTOR 5.1 ± 0.2 DETECTOR ELEMENT (ANODE) DETECTOR ELEMENT (CATHODE) TE-COOLER (-) TE-COOLER (+) THERMISTOR 5.1 ± 0.2 5.1 ± 0.2 KIRDA0029EB KIRDA0031EB Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2001 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 4 Cat. No. KIRD1047E02 Sep. 2001 DN