HAF2015RJ Silicon N Channel MOS FET Series Power Switching ADE-208-933 (Z) 1st. Edition Dec. 2000 This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over power consumption, over current etc. Features • • • • • Logic level operation (5 to 6 V Gate drive) High endurance capability against to the short circuit Built–in the over temperature shut–down circuit Temperature hysteresis type. High density mounting. Outline D D SOP-8 8 7 2 Gate resistor G 8 Tmperature sencing circuit self return circuit Gate shutdown circuit 3 1 2 S D D 5 4 self return circuit 6 1, 3 2, 4 5, 6, 7, 8 Gate resistor Tmperature sencing circuit 4 1 MOS1 G 5 7 6 Gate shutdown circuit 3 MOS2 S Source Gate Drain HAF2015RJ Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 60 V Gate to source voltage VGSS 16 V Gate to source voltage VGSS –2.5 V Drain current ID 2 A 4 A 2 A 0.54 A Drain peak current I D(pulse) Body-drain diode reverse drain current I DR Avalanche current I AP Avalanche energy Note1 Note4 EAR Note4 25 mJ Pch Note2 2 W Channel dissipation Pch Note3 1.5 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Channel dissipation Note: 1. 2. 3. 4. PW ≤ 10 µs, duty cycle ≤ 1 % 1 Drive operation : When using the glass epoxy board (FR4 40 × 40 × 1.6mm), PW ≤ 10s 2 Drive operation : When using the glass epoxy board (FR4 40 × 40 × 1.6mm), PW ≤ 10s Tch = 25°C , Rg > 50 Ω Typical Operation Characteristics Item Symbol Min Typ Max Unit Input voltage VIH 3.5 — — V VIL — — 1.2 V Input current I IH1 — — 100 µA Vi = 5V, VDS = 0 (Gate non shut down) I IH2 — — 50 µA Vi = 3.5V, VDS = 0 I IL — — 1 µA Vi = 1.2V, VDS = 0 Input current I IH(sd)1 — 0.53 — mA Vi = 8V, VDS = 0 (Gate shut down) I IH(sd)2 — 0.2 — mA Vi = 3.5V, VDS = 0 Shut down temperature Tsd — 175 — °C Channel temperature Hysteresis temperature Thr — 120 — °C Channel temperature Gate operation voltage Vop 3.5 — 12 V 2 Test Conditions HAF2015RJ Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain current I D1 0.7 — — A VGS = 3.5 V, VDS = 2 V Drain current I D2 — — 10 mA VGS = 1.2 V, VDS = 2 V Drain to source breakdown voltage V(BR)DSS 60 — — V I D = 10 mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS 16 — — V I G = 300 µA, VDS = 0 Gate to source breakdown voltage V(BR)GSS –2.5 — — V I G = –100 µA, VDS = 0 Gate to source leak current I GSS1 — — 100 µA VGS = 5 V, VDS = 0 I GSS2 — — 50 µA VGS = 3.5 V, VDS = 0 I GSS3 — — 1 µA VGS = 1.2 V, VDS = 0 I GSS4 — — –100 µA VGS = –2.4 V, VDS = 0 I GS(op)1 — 0.53 — mA VGS = 8 V, VDS = 0 I GS(op)2 — 0.2 — mA VGS = 3.5 V, VDS = 0 Zero gate voltege drain current I DSS1 — — 10 µA VDS = 60 V, VGS = 0 Zero gate voltege drain current I DSS2 — — 10 mA VDS = 48 V, VGS = 0 Ta = 125°C Gate to source cutoff voltage VGS(off) 1.4 — 2. 5 V I D = 1 mA, VDS = 10V Static drain to source on state resistance RDS(on) — 130 200 mΩ I D = 1 A, VGS = 5 V Note5 Static drain to source on state resistance RDS(on) — 110 160 mΩ I D = 1 A, VGS = 10 V Note5 Forward transfer admittance |yfs| 0.5 2.5 — S I D = 1 A, VDS = 10 V Note5 Output capacitance Coss — 139 — pF VDS = 10V , VGS = 0 f = 1 MHz Turn-on delay time t d(on) — 4.2 — µs I D = 1 A, VGS = 5 V Rise time tr — 20 — µs RL = 30 Ω Turn-off delay time t d(off) — 1 — µs Fall time tf — 1 — µs Body–drain diode forward voltage VDF — 0.82 — V I F = 2A, VGS = 0 Body–drain diode reverse recovery time t rr — 55 — ns I F = 2A, VGS = 0 diF/ dt = 50 A/µs Over load shut down operation timeNote6 t os1 — 15 — ms VGS = 5 V, VDD = 16 V Input current (shut down) Note: 5. Pulse test 6. Including the junction temperature rise of the over loaded condition 3 HAF2015RJ Main Characteristics Power vs. Temperature Derating 50 2.0 1.0 Drain Current I D (A) 3.0 20 Test Congition: When using the glass epoxy board (FR4 40 × 40 × 1.6mm), PW < 10 s 2D riv eO pe 1D rat i riv eO on pe rat i on 10 0 10 µs 5 1 2 PW 1 s = 10 m s 0.5 0.2 m Operation in this area is limited by R DS(on) DC PW Op 0.1 Ta = 25°C < era 10 tio 1 shot Pulse n s 0.05 1 Drive Operation 0.03 0.5 1 2 5 10 20 50 100 Drain to Source Voltage VDS (V) 7 50 Thermal shut down Operation area te 0 Maximum Safe Operation Area No Channel Dissipation Pch (W) 4.0 100 Case Temperature 150 200 Tc (°C) Note7: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm) Drain Current I D (A) 4 3 10 V 8V 6V 5V 2.5 Pulse Test V DS = 10 V Pulse Test 2 2 VGS = 3.5 V 1 Tc = -25°C 25°C 1.5 4V 0 4 Typical Transfer Characteristics Typical Output Characteristics Drain Current I D (A) 5 75°C 1 0.5 2 4 6 8 Drain to Source Voltage VDS (V) 10 0 1 2 3 4 5 Gate to Source Voltage VGS (V) 0.25 Pulse Test 0.2 0.15 I D= 1 A 0.1 0.5 A 0.05 0.2 A 0 2 4 6 R DS(on) (mΩ) Drain to Source On State Resistance Gate to Source Voltage 8 0.15 200 V GS = 5 V 100 ID=1A 0.1 V GS = 10 V 50 20 Pulse Test 10 0.1 0.2 0.5 1 2 5 Drain Current I D (A) 10 0.5 A, 0.2 A 10 5 2 V GS = 10 V 10 20 Forward Transfer Admittance vs. Drain Current V DS = 10 V Pulse Test Tc = -25°C 1 75°C 0.5 0.05 0 -40 500 VGS (V) Static Drain to Source on State Resistance vs. Temperature 0.25 Pulse Test 0.5 A, 0.2 A ID=1A 0.2 V GS = 5 V Static Drain to Source Sate Resistance vs. Drain Current Forward Transfer Admittance |yfs| (S) Drain to Source Saturation Voltage V DS(on) (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source On State Resistance R DS(on) (mΩ) HAF2015RJ 25°C 0.2 0 40 80 120 Case Temperature Tc (°C) 160 0.1 0.05 0.1 0.2 0.5 1 2 Drain Current I D (A) 5 5 HAF2015RJ Body to Drain Diode Reverse Recovery Time Switching Time t (µs) Reverse Recovery Time trr (ns) V GS = 5 V, V DD •=• 30 V 50 PW = 300 µs, duty ≤ 1 % 200 100 50 20 Switching Characteristics 100 500 di / dt = 50 A / µs V GS = 0, Ta = 25°C 20 tr 10 t d (on) 5 2 tf 1 10 0.01 0.02 0.05 0.1 0.2 0.5 1 Reverse Drain Current I DR 2 5 0.01 0.02 0.05 0.1 0.2 Drain Current (A) 1 2 5 I D (A) 1000 5 Pulse Test VGS = 5 V Capacitance Coss (pF) Reverse Drain Current I DR (A) 0.5 Typical Capacitance vs. Drain to Source Voltage Reverse Drain Current vs. Souece to Drain Voltage 4 3 0V 2 100 1 0 VGS = 0 f = 1 MHz 10 0.4 0.8 1.2 Source to Drain Voltage 6 t d (off) 0.5 1.6 V SD(V) 2.0 0 10 20 30 40 50 Drain to Source Voltage VDS (V) HAF2015RJ Gate to Source Voltage vs. Shutdown Time of Load-Short Test Shutdown Case Temperature vs. Gate to Source Voltage 200 V DD= 16 V Gate to Source Voltage 8 6 4 2 0 0.0001 0.001 0.01 0.1 1 Shutdown Case Temperature Tc (°C) 10 V GS (V) 12 180 160 140 120 100 0 Shutdown Time of Load-Short Test Pw (S) I D = 0.2 A 2 4 6 Gate to Source Voltage Switching Time Test Circuit 10 V GS (V) Waveform Vout Monitor Vin Monitor 8 90% D.U.T. RL Vin Vin 5V 50W V DD = 30 V Vout 10% 10% 90% td(on) tr 10% 90% td(off) tf 7 HAF2015RJ Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation) Normalized Transient Thermal Impedance γs (t) 10 1 D=1 0.5 0.2 0.1 0.1 0.05 θ ch-f(t) = γ s (t) • θch - f θ ch-f = 125°C/W, Ta = 25°C When using the glass epoxy board (FR4 40 × 40 × 1.6mm) 0.02 0.01 0.01 e uls p ot PDM h 0.001 1s D= PW T PW T 0.0001 10 µ 100 µ 1m 10 m 100 m 1 10 100 1000 10000 Pulse Width PW (S) Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation) Normalized Transient Thermal Impedance γs (t) 10 1 D=1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 e uls 0.001 0.0001 10 µ θ ch-f(t) = γ s (t) • θch - f θ ch-f = 166 °C/W, Ta = 25°C When using the glass epoxy board (FR4 40 × 40 × 1.6mm) PDM p ot D= h 1s PW T 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (S) 8 PW T 100 1000 10000 HAF2015RJ Package Dimensions As of January, 2001 Unit: mm 3.95 4.90 5.3 Max 5 8 *0.22 ± 0.03 0.20 ± 0.03 4 1.75 Max 1 0.75 Max + 0.10 6.10 – 0.30 1.08 0.14 – 0.04 *0.42 ± 0.08 0.40 ± 0.06 + 0.11 0° – 8° 1.27 + 0.67 0.60 – 0.20 0.15 0.25 M *Dimension including the plating thickness Base material dimension Hitachi Code JEDEC EIAJ Mass (reference value) FP-8DA Conforms — 0.085 g 9 HAF2015RJ Cautions 1. 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