HTSEMI MM3Z11B

MM3Z2V2B~MM3Z39B
Silicon Planar Zener Diodes
Features
• Total power dissipation : max. 300 mW
• Small plastic package suitable for
PINNING
PIN
surface mounted design
• High reliability
DESCRIPTION
1
Cathode
2
Anode
2
1
Top View
Simplified outline SOD-323 and symbol
Description
Silicon planar Zener diode in a small plastic
SMD SOD-323 package
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
Value
Unit
Ptot
300
mW
Tj
150
O
Tstg
- 55 to + 150
O
Symbol
Max.
RthA
417
VF
0.9
C
C
Characteristics at Ta = 25 OC
Parameter
Thermal Resistance Junction to Ambient Air
Forward Voltage
at IF = 10 mA
Unit
C/W
O
V
１　JinYu
semiconductor
www.htsemi.com
Ｄａｔｅ：２０１１／０５
MM3Z2V2B~MM3Z39B
Characteristics at Ta = 25 OC
Zener Voltage Range 1)
Type
Marking
Code
VZT
ZZT (Max.)
at IZT
Reverse Leakage Current
Vznom
lZT
V
mA
V
Ω
mA
μA
V
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2.1...2.4
2.3…2.65
2.65…2.95
2.95…3.25
3.25…3.55
3.6…3.845
3.89…4.16
4.17…4.43
4.55…4.75
4.98…5.2
5.49…5.73
6.06…6.33
6.65…6.93
7.28…7.6
8.02…8.36
8.85…9.23
9.77…10.21
10.76…11.22
11.74…12.24
12.91…13.49
14.34…14.98
15.85…16.51
17.56…18.35
19.52…20.39
21.54…22.47
23.72…24.78
26.19…27.53
29.19…30.69
32.15…33.79
35.07…36.87
37…41
100
100
110
120
120
100
100
100
100
80
60
60
40
30
30
30
30
30
30
37
42
50
65
85
100
120
150
200
250
300
100
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
120
120
120
50
20
10
5
5
2
2
1
1
0.5
0.5
0.5
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
2
0.7
1
1
1
1
1
1
1
1
1.5
2.5
3
3.5
4
5
6
7
8
9
10
11
12
13
15
17
19
21
23
25
27
30
MM3Z2V2B
MF
2.2
MM3Z2V4B
7C
2.4
MM3Z2V7B
7D
2.7
MM3Z3V0B
7E
3.0
MM3Z3V3B
7F
3.3
MM3Z3V6B
7H
3.6
MM3Z3V9B
7J
3.9
MM3Z4V3B
7K
4.3
MM3Z4V7B
7M
4.7
MM3Z5V1B
7N
5.1
MM3Z5V6B
7P
5.6
MM3Z6V2B
7R
6.2
MM3Z6V8B
7X
6.8
MM3Z7V5B
7Y
7.5
MM3Z8V2B
7Z
8.2
MM3Z9V1B
8A
9.1
MM3Z10B
8B
10
MM3Z11B
8C
11
MM3Z12B
8D
12
MM3Z13B
8E
13
MM3Z15B
8F
15
MM3Z16B
8H
16
MM3Z18B
8J
18
MM3Z20B
8K
20
MM3Z22B
8M
22
MM3Z24B
8N
24
MM3Z27B
8P
27
MM3Z30B
8R
30
MM3Z33B
8X
33
MM3Z36B
8Y
36
MM3Z39B
8Z
39
1)
VZ is tested with pulses (20 ms).
for
Dynamic Impedance
IR (Max.)
at VR
２
JinYu
semiconductor
www.htsemi.com
Ｄａｔｅ：２０１１／０５
MM3Z2V2B~MM3Z39B
Power Dissipation: Ptot (mW)
300
200
100
0
0
25
150
100
Ambient Temperature: Ta ( C)
O
Derating Curve
３
JinYu
semiconductor
www.htsemi.com
Ｄａｔｅ：２０１１／０５
MM3Z2V2B~MM3Z39B
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads
SOD-323
A
c
HE
A
D
E
bp
UNIT
A
mm
1.10
0.80
bp
0.40
0.25
C
0.15
0.10
D
1.80
1.60
E
HE
1.35
1.15
2.80
2.30
４
JinYu
semiconductor
www.htsemi.com
Ｄａｔｅ：２０１１／０５