ISC 2SC5669

Inchange Semiconductor
Product Specification
2SC5669
Silicon NPN Power Transistors
・
DESCRIPTION
・With TO-3PN package
・Complement to type 2SA2031
・Wide area of safe operation
・Large current capacitance
APPLICATIONS
・For audio frequency output applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
250
V
VCEO
Collector-emitter voltage
Open base
230
V
VEBO
Emitter-base voltage
Open collector
6
V
IC
Collector current
15
A
ICM
Collector current-peak
30
A
PC
Collectorl power dissipation
Ta=25℃
2.5
W
TC=25℃
140
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Inchange Semiconductor
Product Specification
2SC5669
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=50mA; RBE=∞
230
V
V(BR)CBO
Collector-base breakdown voltage
IC=5mA; IE=0
250
V
V(BREBO
Emitter-base breakdown voltage
IE=5mA; IC=0
6
V
Collector-emitter saturation voltage
IC=7.5 A;IB=0.75A
VBE
Base-emitter saturation voltage
ICBO
VCEsat
CONDITIONS
MIN
TYP.
0.2
MAX
UNIT
2.0
V
IC=7.5A ; VCE=5V
1.5
V
Collector cut-off current
VCB=250V; IE=0
100
μA
IEBO
Emitter cut-off current
VEB=4V; IC=0
100
μA
hFE-1
DC current gain
IC=1A ; VCE=5V
60
hFE-2
DC current gain
IC=7.5A ; VCE=5V
35
COB
Output capacitance
IE=0 ; VCB=10V,f=1MHz
200
pF
fT
Transition frequency
IC=1A ; VCE=5V
15
MHz
0.56
μs
3.3
μs
0.4
μs
160
Switching times
ton
Turn-on time
tstg
Storage time
tf
IC=7.5A;RL=6.67Ω
IB1=-IB2=0.75A
VCC=50V
Fall time
2
Inchange Semiconductor
Product Specification
2SC5669
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
Inchange Semiconductor
Product Specification
2SC5669
Silicon NPN Power Transistors
4