isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1653 DESCRIPTION ·High Breakdown Voltage: VCBO= 1500V (Min) ·High Switching Speed ·High Reliability APPLICATIONS ·Color TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 2.5 A ICP Collector Current-Pulse 10 A PC Collector Power Dissipation @ TC=25℃ 50 W TJ Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1653 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 100mA; RBE= ∞ 800 V V(BR)CBO Collector-Base Breakdown Voltage IC= 5mA; IE= 0 1500 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 200mA; IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.6A 8.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.6A 1.5 V ICBO Collector Cutoff Current VCB= 800V ; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 1.0 mA hFE DC Current Gain IC= 0.5A; VCE= 5V Fall Time IC= 2A, IB1= 0.6A; IB2= -1.2A 0.4 μs tf isc Website：www.iscsemi.cn CONDITIONS MIN B B 2 TYP. MAX UNIT 8