isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1518 DESCRIPTION ·High Collector-Emitter Breakdown Voltage: V(BR)CEO= 400V(Min) ·High Switching Speed APPLICATIONS ·Switching regulator and high voltage switching applications. n c . i m e ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER s c s .i VALUE ww VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base voltage w UNIT 900 V 400 V 7 V IC Collector Current-Continuous 6 A ICM Collector Current-Pulse 10 A IB Base Current-Continuous 3 A PC Collector Power Dissipation @ TC=25℃ 50 W TJ Junction Temperature 150 ℃ -55~150 ℃ B Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1518 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.5A 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 2.5A; IB= 0.5A 1.5 V ICBO Collector Cutoff Current VCB= 900V; IE= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 1.0 mA hFE-1 DC Current Gain IC= 10mA ; VCE= 5V hFE-2 DC Current Gain IC= 0.6A; VCE= 5V fT COB tf CONDITIONS w w Output Capacitance Fall Time isc Website：www.iscsemi.cn TYP. 8 n c . i m e s c s i . w Current-Gain—Bandwidth Product MIN 10 40 IC= 0.1A; VCE= 10V 5 MHz IE= 0; VCB= 10V; ftest= 1.0MHz 75 pF IC= 2.5A; IB1= 0.5A; IB2= -1A 2 0.5 μs