Inchange Semiconductor Product Specification 2SD1877 Silicon NPN Power Transistors · DESCRIPTION ·With TO-3PML package ·High speed ·High breakdown voltage ·High reliability ·Buitl-in damper diode APPLICATIONS ·Color TV horizontal deflection output ·Color display horizontal deflection output PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol Absolute maximum ratings(Tc=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 4 A ICM Collector current-peak 12 A PC Collector power dissipation 50 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ 1 Inchange Semiconductor Product Specification 2SD1877 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0 VCEsat Collector-emitter saturation voltage IC=2.5A;IB=0.8A 5 V VBEsat Base-emitter saturation voltage IC=2.5A;IB=0.8A 1.5 V ICBO Collector cut-off current VCB=800V; IE=0 10 μA ICES Collector cut-off current VCB=1500V; RBE=0 1.0 mA IEBO Emitter cut-off current VEB=4V; IC=0 40 130 mA hFE-1 DC current gain IC=0.5A ; VCE=5V 8 hFE-2 DC current gain IC=2.5A ; VCE=5V 3.5 Diode forward voltage IEC=4A Fall time IC=3A;RL=50Ω IB1=0.8A;IB2=-1.6A;VCC=200V VF tf 2 800 UNIT V 7 0.1 2.0 V 0.3 μs Inchange Semiconductor Product Specification 2SD1877 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification 2SD1877 Silicon NPN Power Transistors 4