ISC 2SD1711

Inchange Semiconductor
Product Specification
2SD1711
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3PML package
·High voltage;high speed
·High reliability.
·Built-in damper diode
APPLICATIONS
·Ultrahigh-definition CRT display
·Horizontal deflection output applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-3PML) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1500
V
VCEO
Collector-emitter voltage
Open base
800
V
VEBO
Emitter-base voltage
Open collector
5
V
5
A
100
W
IC
Collector current
PC
Collector power dissipation
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SD1711
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter sustaining voltage
IC=100mA;IB=0
VCEsat
Collector-emitter saturation voltage
IC=4.5A;IB=2 A
5.0
V
VBEsat
Base-emitter saturation voltage
IC=4.5A;IB=2 A
1.5
V
IEBO
Emitter cut-off current
VEB=4V; IC=0
130
mA
ICBO
Collector cut-off current
VCB=800V; IE=0
10
μA
ICES
Collector cut-off current
VCE=1500V; RBE=0
1
mA
hFE
DC current gain
IC=0.5 A ; VCE=5V
2
MIN
TYP.
MAX
800
40
10
UNIT
V
40
Inchange Semiconductor
Product Specification
2SD1711
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3