Inchange Semiconductor Product Specification BU941ZPFI Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-3PML package ・DARLINGTON ・High breakdown voltage APPLICATIONS ・High ruggedness electronic ignitions PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VCEO Collector-emitter voltage Open base VEBO Emitter-base voltage Open collector VALUE UNIT 350 V 5 V IC Collector current 15 A ICM Collector current-peak 30 A IB Base current 1 A IBM Base current-peak 5 A PT Total power dissipation 65 W Tj Max.operating junction temperature 175 ℃ -65~175 ℃ MAX UNIT 2.3 ℃/W Tstg TC=25℃ Storage temperature THERMAL CHARACTERISTICS SYMBOL Rth j-case PARAMETER Thermal resistance junction case Inchange Semiconductor Product Specification BU941ZPFI Silicon NPN Power Transistors CHARACT ERISTICS Tj=25℃ unless otherwise specified SYMBOL VCL PARAMETER CONDITIONS MIN MAX UNIT 500 V Clamping voltage IC=0.1 A ;IB=0 VCEsat-1 Collector-emitter saturation voltage IC=8A; IB=100m A 1.8 V VCEsat-2 Collector-emitter saturation voltage IC=10A; IB=250m A 1.8 V VCEsat-3 Collector-emitter saturation voltage IC=12A; IB=300m A 2.0 V VBEsat-1 Base-emitter saturation voltage IC=8A; IB=100m A 2.2 V VBEsat-2 Base-emitter saturation voltage IC=10A; IB=250m A 2.5 V VBEsat-3 Base-emitter saturation voltage IC=12A; IB=300m A 2.7 V ICEO Collector cut-off current VCE=300V; IB=0 TC=125℃ 0.1 0.5 mA IEBO Emitter cut-off current VEB=5V; IC=0 20 mA hFE DC current gain IC=5A ; VCE=10V VF Diode forward voltage IF=10A 2.5 V 2 350 TYP. 300 Inchange Semiconductor Product Specification BU941ZPFI Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3