Preliminary Technical Information IXFH230N10T Trench HiperFETTM Power MOSFET VDSS ID25 = 100V = 230A Ω ≤ 4.7mΩ RDS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 100 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ 100 V VGSS Continuous ± 20 V VGSM Transient ± 30 V ID25 TC = 25°C 230 A G ILRMS Lead Current Limit, RMS 160 A TC = 25°C, Pulse Width Limited by TJM 500 A IA EAS TC = 25°C TC = 25°C 115 1.5 A J PD TC = 25°C 650 W -55 ... +175 °C z TJM 175 °C z Tstg -55 ... +175 °C 300 260 °C °C 6 g TL Tsold Weight z z z z z BVDSS VGS = 0V, ID = 1mA VGS(th) VDS = VGS, ID = 1mA IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) Characteristic Values Min. Typ. Max. 100 2.5 V 4.5 V TJ = 150°C VGS = 10V, ID = 0.5 • ID25 Notes 1, 2 © 2009 IXYS CORPORATION, All rights reserved 3 mA 4.7 mΩ Easy to Mount Space Savings High Power Density Applications z z z ±200 nA 50 μA International Standard Package 175°C Operating Temperature High Current Handling Capability Avalanche Rated Fast Intrinsic Rectifier Low RDS(on) Advantages z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) D = Drain TAB = Drain Features z 1.6mm (0.062in.) from Case for 10s Plastic Body for 10 Seconds (TAB) S G = Gate S = Source IDM TJ D z z z z DC-DC Converters Battery Chargers Switched-Mode and Resonant-Mode Power Supplies DC Choppers AC Motor Drives Uninterruptible Power Supplies High Speed Power Switching Applications DS100104(01/09) IXFH230N10T Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 10V, ID = 60A, Note 1 80 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 100A RG = 1Ω (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd TO-247 (IXFH) Outline 135 S 15.3 nF 1525 pF 195 pF 29 ns 40 ns 45 ns 15 ns 250 nC 70 nC 65 nC 0.23 °C/W RthJC RthCH °C/W 0.21 Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 230 A ISM Repetitive, Pulse Width Limited by TJM 900 A VSD IF = 100A, VGS = 0V, Note 1 1.3 V trr IF = 100A, VGS = 0V IRM -di/dt = 100A/μs VR = 50V QRM 82 ns 4.8 A 196 nC 1 2 ∅P 3 e Terminals: 1 - Gate Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 2 - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 Note 1: Pulse Test, t ≤ 300μs; Duty Cycle, d ≤ 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFH230N10T Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 240 200 180 VGS = 15V 10V 8V 300 250 7V 160 ID - Amperes ID - Amperes 350 VGS = 15V 10V 9V 8V 220 140 6V 120 100 7V 200 150 6V 80 100 60 40 5V 50 5V 20 0 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0.0 1.2 0.5 1.0 1.5 240 2.6 160 6V 140 120 100 80 60 4.0 4.5 5.0 VGS = 10V 2.2 2.0 I D = 230A 1.8 I D = 115A 1.6 1.4 1.2 1.0 5V 40 0.8 20 0.6 0 0.4 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 -50 -25 0 VDS - Volts 25 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 115A Value vs. Drain Current Fig. 6. Drain Current vs. Case Temperature 180 3.0 External Lead Current Limit VGS = 10V 160 15V - - - - 2.6 140 TJ = 175ºC 2.2 ID - Amperes RDS(on) - Normalized 3.5 2.4 RDS(on) - Normalized ID - Amperes 180 3.0 2.8 VGS = 15V 10V 8V 7V 200 2.5 Fig. 4. RDS(on) Normalized to ID = 115A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 150ºC 220 2.0 VDS - Volts VDS - Volts 1.8 120 100 80 60 1.4 40 1.0 20 TJ = 25ºC 0 0.6 0 25 50 75 100 125 150 175 200 ID - Amperes © 2009 IXYS CORPORATION, All rights reserved 225 250 275 300 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 175 IXFH230N10T Fig. 7. Input Admittance Fig. 8. Transconductance 280 280 240 240 200 200 g f s - Siemens ID - Amperes TJ = - 40ºC 160 TJ = 150ºC 25ºC - 40ºC 120 25ºC 160 150ºC 120 80 80 40 40 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0 6.5 40 80 120 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 200 240 280 Fig. 10. Gate Charge 10 300 VDS = 50V 9 250 I D = 115A 8 I G = 10mA 7 200 VGS - Volts IS - Amperes 160 ID - Amperes 150 100 TJ = 150ºC 6 5 4 3 2 TJ = 25ºC 50 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 25 50 75 Fig. 11. Capacitance 125 150 175 200 225 250 Fig. 12. Forward-Bias Safe Operating Area 1,000.0 100,000 RDS(on) Limit f = 1 MHz Ciss 25µs 100.0 10,000 ID - Amperes Capacitance - PicoFarads 100 QG - NanoCoulombs VSD - Volts Coss 1,000 100µs External lead Limit 10.0 1ms 10ms 100ms 1.0 DC TJ = 175ºC Crss TC = 25ºC Single Pulse 100 0.1 0 5 10 15 20 25 30 35 40 VDS - Volts 1 10 100 1000 VDS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: F_230N10T(7V)1-27-09 IXFH230N10T Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 60 48 RG = 1Ω 47 VDS = 50V VGS = 10V VDS = 50V 50 45 I 44 t r - Nanoseconds t r - Nanoseconds 46 RG = 1Ω 55 VGS = 10V = 200A D 43 42 41 I 40 D TJ = 125ºC 45 40 TJ = 25ºC 35 30 = 100A 25 39 20 38 25 35 45 55 65 75 85 95 105 115 40 125 60 80 100 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 100 VDS = 50V 26 250 50 200 40 150 30 100 20 50 10 0 3 4 5 6 7 8 9 td(off) - - - - VDS = 50V 50 I D = 100A 20 46 16 44 I D = 200A 14 42 12 25 10 35 45 400 tf 60 360 22 RG = 1Ω, VGS = 10V 58 VDS = 50V 56 19 52 18 50 17 48 16 46 15 44 12 100 120 95 105 115 40 125 140 160 ID - Amperes © 2009 IXYS CORPORATION, All rights reserved 180 tf td(off) - - - - 200 TJ = 125ºC, VGS = 10V I VDS = 50V D 180 = 200A 280 160 240 140 200 120 160 100 I 120 D = 100A 80 80 60 40 40 40 38 200 0 42 TJ = 25ºC t f - Nanoseconds 54 80 85 220 320 t d(off) - Nanoseconds t f - Nanoseconds td(off) - - - - 20 60 75 20 1 2 3 4 5 6 RG - Ohms 7 8 9 10 t d(off) - Nanoseconds 62 40 65 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 23 13 55 TJ - Degrees Centigrade 24 14 48 18 Fig. 17. Resistive Turn-off Switching Times vs. Drain Current TJ = 125ºC 52 22 RG - Ohms 21 54 RG = 1Ω, VGS = 10V 24 0 2 200 t d(off) - Nanoseconds 60 I D = 200A, 100A t d(on) - Nanoseconds 70 1 180 56 tf 80 350 300 160 28 90 TJ = 125ºC, VGS = 10V 400 t r - Nanoseconds td(on) - - - - t f - Nanoseconds tr 140 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 500 450 120 ID - Amperes IXFH230N10T Fig. 19. Maximum Transient Thermal Impedance Z (th )J C - ºC / W 1.00 0.10 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: F_230N10T(7V)1-27-09