IXFT88N30P IXFH88N30P IXFK88N30P PolarTM HiPerFETTM Power MOSFET VDSS ID25 = = ≤ ≤ RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 300V 88A Ω 40mΩ 200ns TO-268 (IXFT) G S Tab Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 300 V VGSS Continuous ± 20 V VGSM Transient ± 30 V ID25 IL(RMS) TC = 25°C External Lead Current Limit 88 75 A A IDM TC = 25°C, Pulse Width Limited by TJM 220 A IA TC = 25°C 60 A EAS TC = 25°C 2 J dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 10 V/ns PD TC = 25°C 600 W -55 to +150 °C TJM +150 °C Tstg -55 to +150 °C Features TJ TO-247(IXFH) G G 1.6mm (0.063in) from Case for 10s 300 °C z Plastic Body for 10s 260 °C z Md Mounting Torque (TO-247&TO-264) 1.13/10 Nm/lb.in. z Weight TO-268 TO-247 TO-264 4 6 10 g g g z z z VGS = 0V, ID = 250μA 300 VGS(th) VDS = VGS, ID = 4mA 2.5 IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V 5.0 V ±100 nA 25 μA TJ = 125°C RDS(on) z V VGS = 10V, ID = 0.5 • ID25, Note 1 © 2009 IXYS CORPORATION, All Rights Reserved 250 μA 40 mΩ Tab S D = Drain Tab = Drain International Standard Packages Fast Intrinsic Diode Avalanche Rated Low RDS(ON) and QG Low Package Inductance Advantages z BVDSS D G = Gate S = Source TSOLD Characteristic Values Min. Typ. Max. Tab S TO-264 (IXFK) TL Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) D High Power Density Easy to Mount Space Savings Applications z DC-DC Coverters Battery Chargers z Switch-Mode and Resonant-Mode Power Supplies z DC Choppers z AC and DC Motor Drives z Uninterrupted Power Supplies z High Speed Power Switching Applications z DS99216F(11/09) IXFT88N30P IXFH88N30P IXFK88N30P Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 10V, ID = 0.5 • ID25, Note 1 40 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 60A RG = 3.3Ω (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 60 S 6300 pF 950 pF 190 pF 25 ns 24 ns 96 ns 25 ns 180 nC Dim. 44 nC 90 nC A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T 0.21 °C/W RthJC RthCS TO-264 (IXFK) Outline TO-247 TO-264 0.21 0.15 °C/W °C/W Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) IS VGS = 0V ISM VSD trr QRM Characteristic Values Min. Typ. Max. 88 A Repetitive, Pulse Width Limited by TJM 220 A IF = IS, VGS = 0V, Note 1 1.5 V 200 ns 100 IF = 25A, -di/dt = 100A/μs, VR = 100V, VGS = 0V 0 .6 Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 TO-247 (IXFH) Outline μC 1 2 ∅P 3 Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. e Terminals: 1 - Gate 3 - Source TO-268 (IXFT) Outline Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Drain Tab - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFT88N30P IXFH88N30P IXFK88N30P Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 200 90 VGS = 10V 9V 8V 80 160 70 140 7V 60 ID - Amperes ID - Amperes VGS = 10V 9V 180 50 40 8V 120 100 7V 80 6V 30 60 20 6V 40 10 20 5V 5V 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 4.0 2 4 6 8 10 12 14 16 18 20 VDS - Volts VDS - Volts Fig. 4. RDS(on) Normalized to ID = 44A Value vs. Junction Temperature Fig. 3. Output Characteristics @ T J = 125ºC 90 3.2 VGS = 10V 9V 8V 80 VGS = 10V 2.8 70 R DS(on) - Normalized ID - Amperes 7V 60 50 40 6V 30 2.4 I D = 88A 2.0 I D = 44A 1.6 1.2 20 0.8 5V 10 0 0.4 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 -50 8.0 -25 0 Fig. 5. RDS(on) Normalized to ID = 44A Value vs. Drain Current 50 75 100 125 150 125 150 Fig. 6. Maximum Drain Current vs. Case Temperature 80 3.6 VGS = 10V External Lead Current Limit 70 3.2 TJ = 125ºC 2.8 60 ID - Amperes R DS(on) - Normalized 25 TJ - Degrees Centigrade VDS - Volts 2.4 2.0 1.6 50 40 30 20 TJ = 25ºC 1.2 10 0.8 0 0 20 40 60 80 100 120 ID - Amperes © 2009 IXYS CORPORATION, All Rights Reserved 140 160 180 200 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFT88N30P IXFH88N30P IXFK88N30P Fig. 7. Input Admittance Fig. 8. Transconductance 100 160 TJ = - 40ºC 90 140 80 100 80 TJ = 125ºC 25ºC - 40ºC 60 70 g f s - Siemens ID - Amperes 120 25ºC 60 125ºC 50 40 30 40 20 20 10 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 0 8.0 20 40 60 80 VGS - Volts 100 120 140 160 180 ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 240 10 VDS = 150V 200 I D = 44A 8 160 VGS - Volts IS - Amperes I G = 10mA 120 80 6 4 TJ = 125ºC 2 40 TJ = 25ºC 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 0 20 40 60 80 VSD - Volts 120 140 160 180 200 Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 1,000 10,000 RDS(on) Limit Ciss 100µs 25µs 1ms 10ms 100 ID - Amperes Capacitance - PicoFarads 100 QG - NanoCoulombs Coss 1,000 DC 10 Crss TJ = 150ºC f = 1 MHz TC = 25ºC Single Pulse 100 1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1000 IXFT88N30P IXFH88N30P IXFK88N30P Fig. 13. Maximum Transient Thermal Impedance Z (th )J C - ºC / W 1.000 0.100 0.010 0.001 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width - Second © 2009 IXYS CORPORATION, All Rights Reserved IXYS REF: T_88N30P(8S)11-18-09-A