IXFK250N10P IXFX250N10P PolarTM HiPerFETTM Power MOSFET VDSS ID25 TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ 100 100 V V VGSS VGSM Continuous Transient ± 20 ± 30 V V ID25 TC = 25°C (Chip Capability) 250 A ILRMS Lead Current Limit, RMS 160 A IDM TC = 25°C, Pulse Width Limited by TJM 700 A IA TC = 25°C 125 A EAS TC = 25°C 3 J PD TC = 25°C 1250 W dv/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C 20 V/ns -55 ... +175 175 -55 ... +175 °C °C °C 300 260 °C °C TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Md Mounting Torque (TO-264) Mounting Force Weight TO-264 PLUS247 100V 250A Ω 6.5mΩ 200ns RDS(on) ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode FC = = (PLUS247) 1.13/10 Nm/lb.in. 20..120 /4.5..27 N/lb. 10 6 g g G D S Tab PLUS247 (IXFX) G D Tab S G = Gate S = Source D = Drain Tab = Drain Features z z z z z Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Diode Low QG and RDS(on) Low Package Inductance Advantages Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 100 VGS(th) VDS = VGS, ID = 1mA 3.0 IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS, VGS= 0V RDS(on) VGS = 10V, ID = 50A, Note 1 TJ = 150°C z z V 5.0 V ± 200 nA 50 μA 1 mA 6.5 mΩ Applications z z z z z z © 2010 IXYS CORPORATION, All Rights Reserved Easy to Mount Space Savings DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies Uninterrupted Power Supplies AC Motor Drives High Speed Power Switching Applications DS100021A(6/10) IXFK250N10P IXFX250N10P Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 50 VDS = 10V, ID = 60A, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Qgs 83 S 16 nF 4470 pF 290 pF 25 ns 30 ns 50 ns 18 ns 205 nC 77 nC 80 nC Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 1Ω (External) Qg(on) TO-264 Outline VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.12 °C/W RthJC RthCS °C/W 0.15 Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 250 A ISM Repetitive, Pulse Width Limited by TJM 750 A VSD IF = 100A, VGS = 0V, Note 1 1.3 V trr QRM IRM 200 IF = 125A, -di/dt = 100A/μs VR = 50V, VGS = 0V Terminals: 1 - Gate 2 - Drain 3 - Source 4 - Drain Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Millimeter Min. Max. Inches Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 PLUS247TM Outline ns 0.7 μC 10.4 A Terminals: 1 - Gate 2 - Drain 3 - Source Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. Dim. A A1 A2 b b1 b2 C D E e L L1 Q R Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFK250N10P IXFX250N10P Fig. 2. Extended Output Characteristics @ T J = 25ºC Fig. 1. Output Characteristics @ T J = 25ºC 350 250 VGS = 15V 10V 9V 225 200 8V 250 ID - Amperes 175 ID - Amperes VGS = 15V 10V 9V 300 8V 150 125 100 200 150 7V 7V 75 100 50 50 25 6V 6V 0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 0 0.5 1 1.5 2 3 3.5 4 4.5 5 5.5 6 Fig. 4. RDS(on) Normalized to ID = 125A Value vs. Junction Temperature Fig. 3. Output Characteristics @ T J = 150ºC 250 2.4 VGS = 15V 10V 9V 225 200 2.2 VGS = 10V 2.0 R DS(on) - Normalized 8V 175 ID - Amperes 2.5 VDS - Volts VDS - Volts 150 7V 125 100 75 6V I D = 250A 1.8 I D = 125A 1.6 1.4 1.2 1.0 50 0.8 5V 25 0 0.6 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 -50 -25 0 VDS - Volts 25 50 75 100 125 150 175 150 175 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 125A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 2.4 180 TJ = 175ºC 2.2 160 120 1.8 ID - Amperes R DS(on) - Normalized External Lead Current Limit 140 2.0 VGS = 10V 15V 1.6 ---- 1.4 100 80 60 TJ = 25ºC 1.2 40 1.0 20 0.8 0 0 50 100 150 200 ID - Amperes © 2010 IXYS CORPORATION, All Rights Reserved 250 300 350 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 IXFK250N10P IXFX250N10P Fig. 8. Transconductance Fig. 7. Input Admittance 200 140 TJ = - 40ºC 180 120 160 100 TJ = 150ºC 25ºC - 40ºC 120 g f s - Siemens ID - Amperes 140 100 80 25ºC 150ºC 80 60 60 40 40 20 20 0 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 0 20 40 60 80 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 120 140 160 180 200 200 220 Fig. 10. Gate Charge 10 350 VDS = 50V 9 300 I D = 125A 8 250 I G = 10mA 7 6 VGS - Volts IS - Amperes 100 ID - Amperes 200 150 100 5 4 3 TJ = 150ºC 2 TJ = 25ºC 50 1 0 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 0 20 40 60 80 VSD - Volts 100 120 Fig. 11. Capacitance 160 180 Fig. 12. Forward-Bias Safe Operating Area 100,000 1,000 f = 1 MHz RDS(on) Limit Cisss 25µs 10,000 100µs 100 External Lead Limit ID - Amperes Capacitance - PicoFarads 140 QG - NanoCoulombs Coss 1,000 1ms 10 10ms Crss 100 TJ = 175ºC 100ms TC = 25ºC Single Pulse 10 DC 1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1000 IXFK250N10P IXFX250N10P Fig. 13. Maximum Transient Thermal Impedance 1 Z (th )JC - ºC / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2010 IXYS CORPORATION, All Rights Reserved IXYS REF: IXF_250N10P (93)8-04-08