IXFK120N25P IXFX120N25P PolarTM Power MOSFET HiPerFETTM VDSS ID25 RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrisic Diode = = ≤ ≤ 250V 120A Ω 24mΩ 200ns TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 250 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 250 V VGSS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 120 A ILRMS Lead Current Limit, RMS 75 A IDM TC = 25°C, Pulse Width Limited by TJM 300 A IA EAS TC = 25°C TC = 25°C 60 2.5 A J dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 10 V/ns PD TC = 25°C 700 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C 20..120/4.5..27 1.13/10 N/lb. Nm/lb.in. z 6 10 g g z TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Md Mounting Force Mounting Torque Weight (PLUS247) (TO-264) PLUS247 TO-264 G D (TAB) S PLUS247 (IXFX) (TAB) G = Gate S = Source D = Drain TAB = Drain Features z z International Standard Packages Fast Intrinsic Diode Avalanche Rated Low Package Inductance Advantages z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 250 VGS(th) VDS = VGS, ID = 4mA 2.5 IGSS VGS = ±20V, VDS = 0V IDSS VDS = VDSS, VGS= 0V RDS(on) z z V 5.0 V ±200 nA 25 μA 250 μA TJ = 125°C VGS = 10V, ID = 0.5 • ID25, Note 1 © 2009 IXYS CORPORATION, All Rights Reserved 19 24 mΩ Easy to Mount Space Savings High Power Density Applications z z z z z Switched-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls DS99379F(5/09) IXFK120N25P IXFX120N25P Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 10V, ID = 0.5 • ID25, Note 1 45 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz 70 S 8700 nF 1300 pF 240 pF 30 ns 33 ns 130 ns 33 ns 185 nC 50 nC 80 nC Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 3.3Ω (External) Qg(on) Qgs TO-264 (IXFK) Outline VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.18 °C/W RthJC RthCS 0.15 °C/W Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 120 A ISM Repetitive, Pulse Width Limited by TJM 300 A VSD IF = 120A, VGS = 0V, Note 1 1.5 V trr QRM IRM IF = 25A, -di/dt = 100A/μs 0.8 8.0 VR = 100V, VGS = 0V PLUS 247TM (IXFX) Outline 200 nS μC A Note 1: Pulse Test, t ≤ 300μs; Duty Cycle, d ≤ 2%. Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) Dim. A A1 A2 b b1 b2 C D E e L L1 Q R Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFK120N25P IXFX120N25P Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 120 VGS = 10V 9V 110 240 VGS = 10V 100 200 9V 8V 80 ID - Amperes ID - Amperes 90 70 60 50 7V 40 160 8V 120 7V 80 30 20 40 6V 6V 10 0 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 0 3.2 2 4 6 8 10 12 14 16 18 20 VDS - Volts VDS - Volts Fig. 4. RDS(on) Normalized to ID = 60A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 125ºC 120 2.8 VGS = 10V 9V 100 2.6 VGS = 10V 2.4 RDS(on) - Normalized ID - Amperes 8V 80 7V 60 6V 40 2.2 2.0 I D = 120A 1.8 I D = 60A 1.6 1.4 1.2 1.0 20 0.8 5V 0.6 0 0.4 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 -50 -25 0 Fig. 5. RDS(on) Normalized to ID = 60A Value vs. Drain Current 50 75 100 125 150 Fig. 6. Maximum Drain Current vs. Case Temperature 3.8 90 VGS = 10V 3.4 15V TJ = 150ºC External Lead Current Limit 80 ---70 3.0 ID - Amperes RDS(on) - Normalized 25 TJ - Degrees Centigrade VDS - Volts 2.6 2.2 1.8 60 50 40 30 1.4 20 TJ = 25ºC 1.0 10 0.6 0 0 30 60 90 120 150 180 ID - Amperes © 2009 IXYS CORPORATION, All Rights Reserved 210 240 270 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXFK120N25P IXFX120N25P Fig. 7. Input Admittance Fig. 8. Transconductance 200 120 180 110 TJ = - 40ºC 100 160 90 g f s - Siemens ID - Amperes 140 120 100 TJ = 125ºC 25ºC - 40ºC 80 80 25ºC 70 60 125ºC 50 40 60 30 40 20 20 10 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 0 9.0 20 40 60 80 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 120 140 160 180 200 220 Fig. 10. Gate Charge 10 350 VDS = 125V 9 300 I D = 60A 8 250 I G = 10mA 7 VGS - Volts IS - Amperes 100 ID - Amperes 200 150 100 6 5 4 3 TJ = 125ºC 2 TJ = 25ºC 50 1 0 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 20 40 VSD - Volts 80 100 120 140 160 180 200 QG - NanoCoulombs Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 100,000 1,000 RDS(on) Limit f = 1 MHz 25µs Ciss 10,000 ID - Amperes Capacitance - PicoFarads 60 Coss 1,000 100 100µs 1ms 10ms 10 DC TJ = 150ºC TC = 25ºC Single Pulse Crss 100 1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 VDS - Volts 1000 IXFK120N25P IXFX120N25P Fig. 13. Maximum Transient Thermal Impedance 1.000 Z (th)JC - ºC / W 0.100 0.010 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2009 IXYS CORPORATION, All Rights Reserved IXYS REF: T_120N25P(88)4-27-09