IXYS IXGT24N170A

Preliminary Technical Information
High Voltage
IGBTs
IXGH24N170A
IXGT24N170A
VCES =
IC25 =
VCE(sat) ≤
tfi(typ) =
1700V
24A
6.0V
40ns
TO-247 (IXGH)
Symbol
Test Conditions
Maximum Ratings
VCES
TC = 25°C to 150°C
1700
V
VCGR
TJ = 25°C to 150°C, RGE = 1MΩ
1700
V
VGES
Continuous
± 20
V
VGEM
Transient
± 30
V
IC25
IC90
ICM
TC = 25°C
TC = 90°C
TC = 25°C, 1ms
24
16
75
A
A
A
SSOA
(RBSOA)
VGE = 15V, TVJ = 125°C, RG = 10Ω
Clamped Inductive Load
ICM = 50
0.8 • VCES
A
V
tSC
TJ = 125°C, VCE = 1200V, VGE = 15V, RG = 22Ω
10
μs
PC
TC = 25°C
250
W
-55 ... +150
°C
TJM
150
°C
Tstg
-55 ... +150
°C
300
260
°C
°C
1.13/10
Nm/lb.in.
6
4
g
g
TJ
TL
TSOLD
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10 seconds
Md
Mounting Torque (TO-247)
Weight
TO-247
TO-268
G
C
C (TAB)
E
TO-268 (IXGT)
G
E
C (TAB)
G = Gate
E = Emitter
C
= Collector
TAB = Collector
Features
z
z
Optimized for Low Conduction and
Switching Losses
International Standard Packages
Advantages
z
z
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
BVCES
IC = 250μA, VGE = 0V
1700
VGE(th)
IC = 250μA, VCE = VGE
3.0
ICES
VCE = 0.8 • VCES, VGE = 0V
IGES
VCE = 0V, VGE = ± 20V
VCE(sat)
IC = 16A, VGE = 15V, Note 1
5.0
4.5
TJ = 125°C
© 2009 IXYS CORPORATION, All Rights Reserved
Applications
V
z
V
z
50 μA
1 mA
TJ = 125°C
4.8
High Power Density
Low Gate Drive Requirement
±100
nA
6.0
V
z
z
z
z
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Welding Machines
V
DS98995C(05/09)
IXGH24N170A
IXGT24N170A
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
gfs
IC = 24A, VCE = 10V, Note 2
Cies
Coes
Cres
VCE = 25V, VGE = 0V, f = 1MHz
Characteristic Values
Min.
Typ.
Max.
13
Qg
22
S
2860
198
58
pF
pF
pF
140
nC
18
nC
60
nC
21
36
2.97
336
40
80
ns
ns
mJ
ns
ns
0.79
1.50
mJ
IC = 16A, VGE = 15V, VCE = 0.5 • VCES
Qge
Qgc
td(on)
tri
Eon
td(off)
tfi
Inductive Load, TJ = 25°C
IC = 24A, VGE = 15V
VCE = 0.5 • VCES, RG = 10Ω
Note 1
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive Load, TJ = 125°C
IC = 24A, VGE = 15V
VCE = 0.5 • VCES, RG = 10Ω
Note 1
RthJC
RthCK
TO-247 (IXGH) Outline
23
31
3.60
360
96
1.47
ns
ns
mJ
ns
ns
mJ
0.25
0.50 °C/W
°C/W
1
2
∅P
3
e
Terminals: 1 - Gate
3 - Source
Dim.
Millimeter
Min. Max.
A
4.7
5.3
2.2
2.54
A1
2.2
2.6
A2
b
1.0
1.4
1.65
2.13
b1
b2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P 3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
2 - Drain
Tab - Drain
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-268 (IXGT) Outline
Notes:
1.
2.
Switching times may increase for VCE (Clamp) > 0.5 • VCES,
higher TJ or increased RG.
Pulse Test, t ≤ 300μs; Duty Cycle, d ≤ 2%.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXGH24N170A
IXGT24N170A
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
48
180
VGE = 15V
13V
11V
44
40
9V
36
140
32
11V
120
7V
28
IC - Amperes
IC - Amperes
VGE = 15V
13V
160
24
20
16
12
100
9V
80
60
7V
40
8
20
5V
4
5V
0
0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
0
5
10
15
25
30
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
Fig. 3. Output Characteristics
@ 125ºC
48
1.8
VGE = 15V
13V
11V
9V
40
36
VGE = 15V
1.6
VCE(sat) - Normalized
44
IC - Amperes
20
VCE - Volts
VCE - Volts
32
28
7V
24
20
16
12
8
1.4
I
C
= 48A
I
C
= 24A
I
C
= 12A
1.2
1.0
0.8
0.6
5V
4
0.4
0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
-50
9.0
-25
0
25
VCE - Volts
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
75
100
125
150
Fig. 6. Input Admittance
60
9.5
55
TJ = 25ºC
8.5
C
50
45
= 48A
IC - Amperes
I
7.5
VCE - Volts
50
TJ - Degrees Centigrade
6.5
5.5
24A
40
35
TJ = 125ºC
25ºC
- 40ºC
30
25
20
4.5
15
10
3.5
5
12A
2.5
0
5
6
7
8
9
10
11
12
13
VGE - Volts
© 2009 IXYS CORPORATION, All Rights Reserved
14
15
3.5
4.0
4.5
5.0
5.5
6.0
VGE - Volts
6.5
7.0
7.5
8.0
8.5
IXGH24N170A
IXGT24N170A
Fig. 7. Transconductance
Fig. 8. Gate Charge
36
16
TJ = - 40ºC
32
I C = 24A
25ºC
24
12
125ºC
I G = 10mA
10
VGE - Volts
g f s - Siemens
VCE = 850V
14
28
20
16
8
6
12
4
8
2
4
0
0
0
10
20
30
40
50
60
70
0
20
40
60
80
100
120
140
160
QG - NanoCoulombs
IC - Amperes
Fig. 9. Capacitance
Fig. 10. Reverse-Bias Safe Operating Area
60
10,000
f = 1 MHz
40
1,000
IC - Amperes
Capacitance - PicoFarads
50
Cies
Coes
100
30
20
TJ = 125ºC
10
Cres
10
0
5
10
15
20
25
30
35
40
RG = 10Ω
dV / dt < 10V / ns
0
200
400
600
VCE - Volts
800
1000
1200
1400
1600
1800
VCE - Volts
Fig. 11. Maximum Transient Thermal Impedance
Z(th)JC - ºC / W
1.00
0.10
0.01
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXYS REF: G_24N170(6N)05-07-09