JMNIC 2SB557

JMnic
Product Specification
2SB557
Silicon PNP Power Transistors
DESCRIPTION
・With TO-3 package
・Complement to type 2SD427
・High power dissipation
APPLICATIONS
・Power amplifier applications
・Recommended for 50W high-fidelity audio
frequency amplifier output stage
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-120
V
VCEO
Collector-emitter voltage
Open base
-120
V
VEBO
Emitter-base voltage
Open collector
-5
V
IC
Collector current
-8
A
IE
Emitter current
8
A
PC
Collector power dissipation
80
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~150
℃
TC=25℃
JMnic
Product Specification
2SB557
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-0.1A ;IB=0
-120
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-10mA ;IC=0
-5
V
Collector-emitter saturation voltage
IC=-5A; IB=-0.5A
-2.5
V
VBE
Base-emitter on voltage
IC=-5A ; VCE=-5V
-2.0
V
ICBO
Collector cut-off current
VCB=-60V; IE=0
-0.1
mA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-0.1
mA
hFE-1
DC current gain
IC=-1A ; VCE=-5V
40
hFE-2
DC current gain
IC=-5A ; VCE=-5V
20
COB
Output capacitance
IE=0 ; VCB=-10V;f=1.0MHz
fT
Transition frequency
IC=-1A ; VCE=-5V
VCEsat
‹
CONDITIONS
hFE-1 Classifications
R
O
40-80
70-140
2
MIN
TYP.
MAX
UNIT
140
280
pF
7
MHz
JMnic
Product Specification
2SB557
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3