JMNIC 2SC5358

Product Specification
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2SC5358
Silicon NPN Power Transistors
・
DESCRIPTION
・With TO-3P(I) package
・Complement to type 2SA1986
APPLICATIONS
・Power amplifier applications
・Recommend for 80W high fidelity
audio frequency amplifier output stage
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3P(I)) and symbol
Absolute maximum ratings(Tc=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
230
V
VCEO
Collector-emitter voltage
Open base
230
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current
15
A
IB
Base current
1.5
A
PC
Collectorl power dissipation
150
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
JMnic
Product Specification
www.jmnic.com
2SC5358
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO
Collector-emitter breakdown voltage
IC=50mA; IB=0
VCEsat
Collector-emitter saturation voltage
IC=8 A;IB=0.8A
3.0
V
VBE
Base-emitter voltage
IC=7A ; VCE=5V
1.5
V
ICBO
Collector cut-off current
VCB=230V IE=0
5
μA
IEBO
Emitter cut-off current
VEB=5V; IC=0
5
μA
hFE-1
DC current gain
IC=1A ; VCE=5V
55
hFE-2
DC current gain
IC=7A ; VCE=5V
35
fT
Transition frequency
IC=1A ; VCE=5V
30
MHz
COB
Output capacitance
IE=0; VCB=10V;f=1MHz
200
pF
hFE-1 classifications
R
O
55-110
90-180
JMnic
MIN
TYP.
MAX
230
UNIT
V
180
Product Specification
www.jmnic.com
2SC5358
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
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