JMnic Product Specification 2SB697 2SB697K Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2SD733/733K ・High power dissipation APPLICATIONS ・Power amplifier applications ・Recommended for high-power high-fidelity audio frequency amplifier output stage PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol 导体 半 电 固 Absolute maximum ratings(Ta=℃) SYMBOL D N O IC PARAMETER CONDITIONS M E S E G N HA 2SB697 VCBO VCEO Collector-base voltage INC 2SB697K 2SB697 Collector-emitter voltage Emitter-base voltage VALUE UNIT -160 Open emitter V -180 -140 Open base 2SB697K VEBO R O T UC V -160 Open collector -6 V IC Collector current -12 A ICM Collector current-peak -20 A PC Collector power dissipation 100 W Tj Junction temperature 150 ℃ Tstg Storage temperature -40~150 ℃ TC=25℃ JMnic Product Specification 2SB697 2SB697K Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2SB697 V(BR)CEO V(BR)CBO Collector-emitter breakdown voltage VCEsat VBE ICBO -160 2SB697 -160 IC=-5mA ;IE=0 IE=-5mA ;IC=0 Collector-emitter saturation voltage IC=-6A; IB=-0.6A 固 V -180 Emitter-base breakdown voltage 导体 半 电 -6 V -1.0 IC=-1A ; VCE=-5V VCB=-80V; IE=0 IEBO Emitter cut-off current VEB=-4V; IC=0 hFE-1 DC current gain IC=-1A ; VCE=-5V 40 hFE-2 DC current gain IC=-5A ; VCE=-5V 20 Transition frequency IC=-1A ; VCE=-5V D N O EMIC S E G HAN hFE-1 Classifications C D E F 40-80 60-120 100-200 160-320 2 -2.5 V -1.5 V R O T UC Collector cut-off current UNIT V 2SB697K Base-emitter on voltage fT MAX IC=-50mA ;IB=0 Collector-emitter breakdown voltage INC TYP. -140 2SB697K V(BR)EBO MIN -0.1 mA -0.1 mA 320 15 MHz JMnic Product Specification 2SB697 2SB697K Silicon PNP Power Transistors PACKAGE OUTLINE 导体 半 电 固 INC R O T UC D N O EMIC S E G HAN Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3