JMnic Product Specification 2SC3637 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・High voltage ,high speed ・High reliability APPLICATIONS ・Ultrahigh-definition CRT display horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 900 V VCEO Collector-emitter voltage Open base 500 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 10 A ICM Collector current-peak 20 A PC Collector power dissipation 90 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ JMnic Product Specification 2SC3637 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ; IB=0 VCEsat Collector-emitter saturation voltage IC=5A ;IB=1A 2.0 V VBEsat Base-emitter saturation voltage IC=5A ;IB=1A 1.5 V ICBO Collector cut-off current VCB=500V; IE=0 10 μA ICES Collector cut-off current VCE=900V; RBE=0 0.5 mA IEBO Emitter cut-off current VEB=5V; IC=0 1.0 mA hFE DC current gain IC=1A ; VCE=5V 3.0 μs 0.2 μs 500 UNIT V 8 Switching times ts Storage time VCC=200V;IC=5A; IB1=1A; IB2=-2A tf Fall time 0.1 2 JMnic Product Specification 2SC3637 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 JMnic Product Specification 2SC3637 Silicon NPN Power Transistors 4