JMNIC 2SC5296

JMnic
Product Specification
2SC5296
Silicon NPN Power Transistors
・
DESCRIPTION
・With TO-3PML package
・High breakdown voltage, high reliability.
・High speed
・Built in damper diode
APPLICATIONS
・Ultrahigh-definition CRT display
・Horizontal deflection output applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-3PML) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1500
V
VCEO
Collector-emitter voltage
Open base
800
V
VEBO
Emitter-base voltage
Open collector
6
V
IC
Collector current
8
A
ICM
Collector current-peak
16
A
PC
Collector power dissipation
TC=25℃
60
W
3
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
JMnic
Product Specification
2SC5296
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEsat
Collector-emitter saturation voltage
VBEsat
MAX
UNIT
IC=5A;IB=1.25 A
5
V
Base-emitter saturation voltage
IC=5A;IB=1.25 A
1.5
V
Collector-emitter sustaining voltage
IC=100mA;IB=0
800
IEBO
Emitter cut-off current
VEB=4V IC=0
40
ICBO
Collector cut-off current
ICES
VCEO(SUS)
CONDITIONS
MIN
TYP.
V
130
mA
VCB=800V ;IE=0
10
μA
Collector cut-off current
VCE=1500V; RBE=0
1
mA
hFE-1
DC current gain
IC=1 A ; VCE=5V
15
25
hFE-2
DC current gain
IC=5A ; VCE=5V
4
7
Switching times
tstg
tf
Storage time
Fall time
IC=4A;RL=50Ω
IB1=0.8A; IB2=-1.6A
VCC=200V
2
0.1
3.0
μs
0.2
μs
JMnic
Product Specification
2SC5296
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
JMnic
Product Specification
2SC5296
Silicon NPN Power Transistors
4