KEXIN 1SS307

Diodes
SMD Type
Silicon Epitaxial Planar Type
1SS307
Features
SOT-23
3
+0.1
2.4-0.1
:CT = 3.0 pF(Typ)
0.4
:IR= 0.1 nA (Typ)
1
0.55
Low reverse Current
+0.1
1.3-0.1
:VF =1.0 V(Typ)
Small total capacitance
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
Low forward voltage
2
+0.1
0.95-0.1
+0.1
1.9-0.1
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Maximum (peak) reverse voltage
Symbol
Rating
Unit
VRM
35
V
Reverse voltage
VR
30
V
Average forward current
IO
100
mA
Maximum (peak) forward current
IFM
300
mA
Surge current (10 ms)
IFSM
2
A
P
150
mW
Power dissipation
Junction Temperature
Tj
125
Storage Temperature
Tstg
-55 + 125
Electrical Characteristics Ta = 25
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
1.3
V
VF
IF = 100 mA
1.0
Reverse current
IR
VR = 30 V
0.1
10
nA
Total capacitance
CT
VR = 0, f = 1.0 MHz
3.0
6.0
pF
Forward voltage
Marking
Marking
C9
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