Diodes SMD Type SILICON SWICHING DIODE BAS140WS SOD-323 +0.05 0.85-0.05 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm +0.1 1.3-0.1 Features General purpose diodes for high-speed switching +0.1 2.6-0.1 1.0max Circuit protection Voltage clamping 0.375 0.475 +0.05 0.1-0.02 High-level detecting and mixing Absolute Maximum Ratings Ta = 25 Parameter Symbol Value Unit Reverse voltage VR 40 V Forward current IF 120 mA IFSM 200 mA Ptot 250 mW Top -55 to+125 Storage Temperature range Tstg -65 to+150 Junction ambient(1) RthJA 260 K/W Junction- soldering point RthJS 150 K/W Surge forward current t Total power dissipation 1.0 Ts s 113 Operating temperature range Note: 1.Package mounted on an epoxy pcb 40 mm 40 mm 15 mm/1cm2 Cu. Electrical Characteristics Ta = 25 Param eter Breakdown voltage I (BR) = 10 A Sym bol Min V (BR) 40 Typ Max Unit V Forward voltage 250 310 380 I F = 10 m A IF = 1 m A 350 450 500 I F = 15 m A 600 720 1000 VF mV Reverse current IR V R = 30 V 1 V R = 40 V A 10 Diode capacitance V R = 0; f = 1 MHz Differential forward resistance Series inductance I F = 10 m A, f = 10 KHz CT 3 RF 10 Ls 2 5 pF nH Marking Marking 4 www.kexin.com.cn 1