KEXIN KI2325DS

Transistors
IC
SMD Type
P-Channel 150-V (D-S) MOSFET
KI2325DS
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
Features
+0.1
1.3-0.1
+0.1
2.4-0.1
Ultra Low On-Resistance
0.4
3
TrenchFET Power MOSFET
1
0.55
Small Size
2
+0.1
0.95-0.1
+0.1
1.9-0.1
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
1.Base
1.
Gate
2.Emitter
2.
Source
3.
Drain
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
5 sec
Steady State
Unit
Drain-Source Voltage
VDS
-150
V
Gate-Source Voltage
VGS
20
V
Continuous Drain Current(TJ=150 ) *1,2 TA=25
------------------------------------------------TA=70
ID
Pulsed Drain Current
IDM
-0.69
-0.55
-0.53
-0.43
A
-0.6
A
-1.6
-1.0
Continuous Source Current (diode conduction) *1,2
IS
Single-Pluse Avalanche Current
L = 1 0 mH
IAS
4.5
Single-Pulse Avalanche Energy
L = 1 0 mH
EAS
1.01
1.25
0.8
A
mJ
0.75
0.48
Power Dissipation *1 ,2
TA=25
-------------------------------------------------TA=70
PD
Jumction Temperature
Tj
150
Storage Temperature
Tstg
-55 to +150
W
*1 Surface Mounted on 1" X 1" FR4 Board.
*2 Pulse width limited by maximum junction temperature.
Thermal Resistance Ratings Ta = 25
Parameter
Maximum Junction-to-Ambient *
Symbol
t
5 sec
Maximum Junction-to-Ambient
Steady State
Maximum Junction-to-Foot (Drain)
Steady State
RthJA
RthJF
Typical
Maximum
75
100
120
166
40
50
Unit
/W
* Surface Mounted on 1" X 1" FR4 Board.
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1
Transistors
IC
SMD Type
KI2325DS
Electrical Characteristics Ta = 25
Parameter
Symbol
Drain-Source Breakdown Voltage
Testconditons
VGS(th)
Gate-Body Leakage
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current
ID(on)
Drain-Source On-State Resistance *
rDS(on)
VDS = VGS, ID = -250 ìA
VDS = 0 V, VGS =
Max
-4.5
100
VDS = -150V, VGS = 0 V
-1
VDS = -150 V, VGS = 0 V, TJ = 55
-10
VDS
-1.6
-15 V, VGS = -10V
VGS = -10 V, ID = -0.5 A
1.0
1.2
1.05
1.3
2.2
VDS = -15 V, ID = -0.5 A
IS = -1.0 A, VGS = 0 V
Diode Forward Voltage *
VSD
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
16
td(on)
7
11
11
17
16
25
11
17
90
135
tr
td(off)
Turn-Off Time
* Pulse test: PW
300 ìs duty cycle
Marking
Marking
D5
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Qrr
2%.
0.7
-1.2
7.7
12
V
nC
1.5
2.5
f = 1.0 MHz
9
340
VDS = -25V ,VGS = 0 , f = 1 MHz
VDD = -75V , RL =75 ,
ID = -1A , VGEN =- 10V , RG = 6
tf
Body Diode Reverse Recovery Charge
A
S
Total Gate Charge
VDS = -75V ,VGS = 10 V , ID= -0.5 A
nA
A
VGS = -6.0 V, ID = -0.5 A
gfs
Unit
V
-2.5
20 V
Forward Transconductance *
Turn-On Time
2
Typ
-150
V(BR)DSS VGS = 0 V, ID = -250 A
Gate Threshold Voltage
Min
IF = 0.5 A, di/dt = 100 A/
s
510
pF
30
ns
nC