Transistors SMD Type P-Channel 1.8-V (G-S) MOSFET KI2311DS SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 TrenchFET Power MOSFETS 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 1. Gate 2.Emitter 2. Source 3. Drain 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 )*1,2 TA = 25 ID TA = 70 Pulsed Drain Current 5secs Steady State -8 Unit V 8 -3.5 -3 -2.8 -2.4 A IDM Continuous Source Current (Diode Conduction)*1,2 Maximum Power Dissipation *1,2 TA = 25 IS PD TA = 70 Operating Junction and Storage Temperature Range -0.8 -0.6 0.96 0.71 0.62 0.46 W -55 to 150 TJ, Tstg *1 Surface Mounted on FR4 Board. *2 Pulse width limited by maximum junction temperature. Thermal Resistance Ratings Parameter Maximum Junction-to-Ambient * Symbol t 5 sec RthJA Steady-State Maximum Junction-to-Foot (Drain) Steady-State RthJF Typical Maximum 100 130 140 175 60 75 Unit /W * Surface Mounted on FR4 Board. www.kexin.com.cn 1 Transistors SMD Type KI2311DS Electrical Characteristics Ta = 25 Parameter Symbol Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage On-State Drain Current* VGS = 0 V, ID = -10 VGS(th) VDS = VGS, ID =-250 IDSS ID(on) Drain Source On State Resistance* rDS(on) VDS = 0 V, VGS = A A Min Typ Max -8 -0.45 8V -8 V 100 nA -1 VDS = -6.4V, VGS = 0 V, TJ = 55 -10 A VDS -5 V, VGS = -4.5 V -6 VDS -5 V, VGS =-2.5 V -3 A VGS = -4.5 V, ID = -3.5 A 0.036 0.045 VGS = -2.5V, ID = -3A 0.058 0.072 VGS = -1.8V, ID =-0.7A 0.096 0.120 9.0 Forward Transconductanceb gfs VDS = -5V, ID = -3.5 A VSD IS = -0.8 A, VGS = 0 V Total Gate Charge Qg 8.5 VDS = -4 V, VGS = -4.5V, ID = -3.5 A S -1.2 nC Qgs Gate-Drain Charge Qgd 2.1 Input Capacitance Ciss 970 Output Capacitance Coss Reverse Transfer Capacitance Crss 160 Turn-On Delay Time td(on) 18 25 45 65 40 60 45 65 tr td(off) Fall Time * Pulse test :Pulse width tf 300 s,duty cycle 2% Marking Marking www.kexin.com.cn C1 VDS = -4 V, VGS = 0, f = 1 MHz VDD=-4V,RL=4 ,ID=-1A,VGEN=4.5V,RG=6 * V 12 Gate-Source Charge Turn-Off Delay Time Unit V VDS = -6.4V, VGS = 0 V Schottky Diode Forward Voltage* Rise Time 2 V(BR)DSS IGSS Zero Gate Voltage Drain Current Testconditons 1.5 pF 485 ns