NTE NTE56033

NTE56033
TRIAC, 45 Amp
Features:
D Blocking Voltage of 600V
D Glass–Passivated Chip
D Gate Triggering Guaranteed in Four Modes
D Excellent Thermal Impedance and High Reliability Construction
Absolute Maximum Ratings:
Peak Repetitive Off–State Voltage (1/2 Sine Wave 6.3µs), VDRM . . . . . . . . . . . . . . . . . . . . . . . . 600V
On–State RMS Current (TC = +60°C, 360° Conduction Angle), IT(RMS) . . . . . . . . . . . . . . . . . . . 40A
Peak Non–Repetitive Surge Current (+25° < TJ initial < +110°C, One Full Cycle), ITSM
60Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 420A
50Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400A
Circuit Fusing (t = 10ms), I2t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800A2s
Peak Gate Current (t = 10µs, Note 1), IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±10A
Peak Gate Voltage (t = 10µs, Note 1), VGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±16V
Peak Gate Power (t = 10µs, Note 1), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W
Average Gate Power, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +110°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +125°C
Thermal Resistance, Contact (with Grease), RthCH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.2°C/W
Thermal Resistance, Junction–to–Case, RthJC(DC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.33°C/W
Thermal Resistance, Junction–to–Case (F = 50Hz, 360° Conduction Angle), RthJC(AC) . . . . 1°C/W
Note 1. For either polarity of gate voltage with reference to MT1.
Note 2. For either polarity of MT2 voltage with reference to MT1.
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Peak Forward Blocking Current
IDRM
TJ = +110°C, VD = 600V, Gate Open, Note 2
–
0.75
4.0
mA
VD = 12V, RL = 33Ω, Pulse Duration > 20µs,
Note 1
1
–
50
mA
1
–
75
mA
–
–
2.5
V
0.2
–
–
V
VD = 12V, IT = 1A, Gate Open, Note 2
–
30
80
mA
ITM = 60A, tp = 10ms, Note 2
–
–
1.6
V
VD = 600V, ITM = 40A, IG = 1A,
diG/dt = 10A/µs, Note 1
–
2.5
–
µs
VD = 600V, Gate Open, TJ = +110°C, Note 2
50
150
–
V/µs
–
5
–
V/µs
Gate Trigger Current
Quadrant I, II, III
IGT
Quadrant IV
Gate Trigger Voltage
VGT
VD = 12V, RL = 33Ω, Pulse Duration > 20µs,
Note 1
Gate Non–Trigger Voltage
VGD
VD = 600V, TJ = +110°C, RL = 3k,
Pulse Duration > 20µs, Note 1
Holding Current
IH
Peak On–State Voltage
VTM
Gate Controlled Turn–On Time
tgt
Critical Rate of Rise of
Off–State Voltage
dv/dt
Critical Rate of Rise of
Commutation Voltage
dv/dt(c) VD = 600V, ITM = 40A, TC = +60°C
Commutating di/dt = 18A/ms, Note 2
Note 1. For either polarity of gate voltage with reference to MT1.
Note 2. For either polarity of MT2 voltage with reference to MT1.
.600 (15.24)
.060 (1.52)
.173 (4.4)
MT2
.156
(3.96)
Dia.
MT1
MT2
.550
(13.97)
.430
(10.92)
Gate
.500
(12.7)
Min
.055 (1.4)
.015 (0.39)
.215 (5.45)
NOTE: Dotted line indicates that case may have square corners.