RU7570L N-Channel Advanced Power MOSFET MOSFET Features Pin Description • 75V/70A, RDS (ON) =9mΩ(tpy.)@VGS=10V • Super High Dense Cell Design • Fast Switching and Fully Avalanche Rated • Reliable and Rugged TO252 • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant) Applications • High Speed Power Switching N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 75 VGSS Gate-Source Voltage ±25 Maximum Junction Temperature 175 °C -55 to 175 °C TC=25°C 70 A TC=25°C 280 TC=25°C 70 TC=100°C 51 TC=25°C 103 TC=100°C 52 TJ TSTG IS Storage Temperature Range Diode Continuous Forward Current V Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=10V) PD RθJC Maximum Power Dissipation Thermal Resistance-Junction to Case ① A ② A W 1.45 °C/W 169 mJ Drain-Source Avalanche Ratings EAS ③ Avalanche Energy, Single Pulsed Copyright Ruichips Semiconductor Co., Ltd Rev. A– NOV., 2011 www.ruichips.com RU7570L Electrical Characteristics Symbol (TC=25°C Unless Otherwise Noted) Parameter Test Condition RU7570L Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) IGSS RDS(ON) ④ VGS=0V, IDS=250µA V 75 VDS= 100V, VGS=0V 1 TJ=85°C Gate Threshold Voltage VDS=VGS, IDS=250µA Gate Leakage Current VGS=±25V, VDS=0V Drain-Source On-state Resistance VGS= 10V, IDS=35A 30 2 3 9 µA 4 V ±100 nA 12 mΩ 1.2 V Diode Characteristics VSD ④ Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD=35A, VGS=0V ISD=35A, dlSD/dt=100A/µs 38 ns 45 nC 2.0 Ω ⑤ Dynamic Characteristics RG Gate Resistance VGS=0V,VDS=0V,F=1MHz Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf VGS=0V, VDS=40V, Frequency=1.0MHz 2850 320 pF 150 27 VDD=40V, RL=1.2Ω, IDS=35A, VGEN= 10V, RG=4.7Ω Turn-off Fall Time 32 ns 93 68 ⑤ Gate Charge Characteristics Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Notes: 68 VDS=60V, VGS= 10V, IDS=35A 12 nC 23 Pulse width limited by safe operating area. Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 60A. Limited by TJmax, IAS =26A, VDD = 48V, RG = 50Ω , Starting TJ = 25°C. Pulse test ; Pulse width≤300µs, duty cycle≤2%. Guaranteed by design, not subject to production testing. Copyright Ruichips Semiconductor Co., Ltd Rev. A– NOV., 2011 2 www.ruichips.com RU7570L Typical Characteristics Drain Current Ptot - Power (W) ID - Drain Current (A) Power Dissipation Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Safe Operation Area ID - Drain Current (A) Normalized Effective Transient Thermal Transient Impedance VDS - Drain-Source Voltage (V) Copyright Ruichips Semiconductor Co., Ltd Rev. A– NOV., 2011 Square Wave Pulse Duration (sec) 3 www.ruichips.com RU7570L Typical Characteristics Drain-Source On Resistance ID - Drain Current (A) RDS(ON) - On Resistance (mΩ) Output Characteristics VDS - Drain-Source Voltage (V) ID - Drain Current (A) Gate Threshold Voltage RDS(ON) - On - Resistance (m) Normalized Threshold Voltage Drain-Source On Resistance VGS - Gate-Source Voltage (V) Copyright Ruichips Semiconductor Co., Ltd Rev. A– NOV., 2011 Tj - Junction Temperature (°C) 4 www.ruichips.com RU7570L Typical Characteristics Source-Drain Diode Forward IS - Source Current (A) Normalized On Resistance Drain-Source On Resistance Tj - Junction Temperature (°C) VSD - Source-Drain Voltage (V) Gate Charge C - Capacitance (pF) VGS - Gate-Source Voltage (V) Capacitance VDS - Drain-Source Voltage (V) Copyright Ruichips Semiconductor Co., Ltd Rev. A– NOV., 2011 QG - Gate Charge (nC) 5 www.ruichips.com RU7570L Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Copyright Ruichips Semiconductor Co., Ltd Rev. A– NOV., 2011 6 www.ruichips.com RU7570L Ordering and Marking Information Device Marking Package Packaging Quantity Reel Size Tape width RU7570L RU7570L TO-252 Tape&Reel 2500 13’’ 16mm Copyright Ruichips Semiconductor Co., Ltd Rev. A– NOV., 2011 7 www.ruichips.com RU7570L Package Information TO252-2L SYMBOL MM INCH MM SYMBOL INCH MIN MAX MIN MAX A 2.200 2.400 0.087 0.094 L A1 0.000 0.127 0.000 0.005 L1 b 0.660 0.860 0.026 0.034 L2 C 0.460 0.580 0.018 0.023 L3 D 6.500 6.700 0.256 0.264 L4 0.600 1.000 0.024 0.039 D1 5.100 5.460 0.201 0.215 Φ 1.100 1.300 0.043 0.051 θ 0° 8° 0° 8° 0.000 0.300 0.000 0.012 D2 4.830 REF. 0.190 REF. E 6.000 6.200 0.236 0.244 h e 2.186 2.386 0.086 0.094 V MIN MAX MIN MAX 9.800 10.400 0.386 0.409 2.900 REF. 1.400 1.700 1.600 REF. 5.350 REF. 0.114 REF. 0.055 0.067 0.063REF. 0.211 REF. ALL DIMENSIONS REFER TO JEDEC STANDARD DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS Copyright Ruichips Semiconductor Co., Ltd Rev. A– NOV., 2011 8 www.ruichips.com RU7570L Customer Service Worldwide Sales and Service: [email protected] Technical Support: [email protected] Investor Relations Contacts: [email protected] Marcom Contact: [email protected] Editorial Contact: [email protected] HR Contact: [email protected] Legal Contact: [email protected] Shen Zhen RUICHIPS Semiconductor CO., LTD Room 501, the 5floor An Tong Industrial Building, NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA TEL: (86-755) 8311-5334 FAX: (86-755) 8311-4278 E-mail: [email protected] Copyright Ruichips Semiconductor Co., Ltd Rev. A– NOV., 2011 9 www.ruichips.com