SAVANTIC 2N3441

SavantIC Semiconductor
Product Specification
2N3441
Silicon NPN Power Transistors
DESCRIPTION
·With TO-66 package
·Continuous collector current-IC=3A
·Power dissipation -PD=25W @TC=25
APPLICATIONS
For use in general-purpose switching and
Linear amplifier applications such as:
·Driver for high power outputs
·Series and shunt regulators
·Audio and servo amplifiers
·Solenoid and relay drivers
·Power switching circuits
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-66) and symbol
ABSOLUTE MAXIMUM RATINGS(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
160
V
VCEO
Collector-emitter voltage
Open base
140
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current
3
A
IB
Base current
2
A
PD
Total power dissipation
25
W
Tj
Junction temperature
200
Tstg
Storage temperature
-65~200
TC=25
THERMAL CHARACTERISTICS
SYMBOL
R(th) jc
PARAMETER
Thermal resistance junction to case
MAX
7.0
UNIT
/W
SavantIC Semiconductor
Product Specification
2N3441
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter sustaining voltage
IC=100mA ; IB=0
VCE(sat)
Collector-emitter saturation voltage
IC=2.7A; IB=0.9A
6.0
V
VBE(on)
Base -emitter on voltage
IC=2.7A ; VCE=4V
6.7
V
ICEX
Collector cut-off current
VCE=140V;VBE(off)=1.5V
VCE=140V;VBE(off)=1.5V TC=150
5.0
6.0
mA
ICEO
Collector cut-off current
VCE=140V; IB=0
10
mA
IEBO
Emitter cut-off current
VEB=7V; IC=0
1.0
mA
hFE-1
DC current gain
IC=0.5A ; VCE=4V
25
hFE-2
DC current gain
IC=2.7A ; VCE=4V
5
2
MIN
TYP.
MAX
140
UNIT
V
100
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
2N3441