SAVANTIC 2N5634

SavantIC Semiconductor
Product Specification
2N5632 2N5633 2N5634
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·Low collector saturation voltage
·High DC current gain
APPLICATIONS
·For general-purpose power amplifier
and switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
CONDITIONS
2N5632
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
2N5633
Open emitter
120
2N5634
140
2N5632
100
2N5633
Emitter-base voltage
UNIT
100
Open base
2N5634
VEBO
VALUE
120
V
V
140
Open collector
7
V
10
A
150
W
IC
Collector current
PD
Total Power Dissipation
Tj
Junction temperature
150
Tstg
Storage temperature
-65~200
TC=25
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance junction to case
VALUE
1.1
UNIT
/W
SavantIC Semiconductor
Product Specification
2N5632 2N5633 2N5634
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2N5632
VCEO(SUS)
Collector-emitter
sustaining voltage
2N5633
MIN
TYP.
MAX
UNIT
100
IC=0.2A ;IB=0
V
120
140
2N5634
VCEsat-1
Collector-emitter saturation voltage
IC=7A; IB=0.7A
1.0
V
VCEsat-2
Collector-emitter saturation voltage
IC=10A ;IB=2A
3.0
V
Base-emitter saturation voltage
IC=10A ;IB=2A
2.5
V
Base-emitter on voltage
IC=5A ; VCE=5V
1.5
V
1.0
mA
VBEsat
VBE
ICEO
Collector cut-off current
2N5632
VCE=50V; IB=0
2N5633
VCE=60V; IB=0
2N5634
VCE=70V; IB=0
ICEV
Collector cut-off current
VCE=ratedVCB; VBE(off)=1.5V
TC=150
1.0
5.0
mA
IEBO
Emitter cut-off current
VEB=7V; IC=0
1.0
mA
2N5632
hFE
DC current gain
2N5633
IC=5A ; VCE=5V
2N5634
fT
Transition frequency
IC=1A ; VCE=20V
2
25
100
20
80
15
60
1.0
MHz
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2N5632 2N5633 2N5634
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)
3