SAVANTIC 2SB760

SavantIC Semiconductor
Product Specification
2SB760
Silicon PNP Power Transistors
DESCRIPTION
·With TO-220 package
·Low collector saturation voltage
·Complement to type 2SD855
APPLICATIONS
·For audio frequency and radio frequency
power amplifier applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-60
V
VCEO
Collector-emitter voltage
Open base
-60
V
VEBO
Emitter-base voltage
Open collector
-5
V
-1
A
30
W
IC
Collector current
PC
Collector power dissipation
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
TC=25
SavantIC Semiconductor
Product Specification
2SB760
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter breakdown voltage
IC=-10mA IB=0
-60
V
V(BR)CBO
Collector-base breakdown voltage
IC=-1mA; IE=0
-60
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-1mA; IC=0
-5
V
VCEsat
Collector-emitter saturation voltage
IC=-1A; IB=-0.1A
-1.0
V
VBEsat
Base-emitter saturation voltage
IC=-1A; IB=-0.1A
-1.5
V
ICBO
Collector cut-off current
VCB=-60V; IE=0
-100
µA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-100
µA
hFE
DC current gain
IC=-0.2A ; VCE=-4V
2
MIN
40
TYP.
MAX
450
UNIT
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
2SB760