SAVANTIC 2SC2361

SavantIC Semiconductor
Product Specification
2SC2361
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220C package
·Complement to type 2SA1123
·Low collector saturation voltage
APPLICATIONS
·For power amplifier applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
100
V
VCEO
Collector-emitter voltage
Open base
70
V
VEBO
Emitter-base voltage
Open collector
6
V
IC
Collector current (DC)
4
A
PC
Collector dissipation
25
W
Tj
Junction temperature
150
Tstg
Storage temperature
-50~150
TC=25
SavantIC Semiconductor
Product Specification
2SC2361
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.1 A; IB=0
70
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1m A; IC=0
6
V
Collector-emitter saturation voltage
IC=4A; IB=0.4A
1.5
V
VBE
Base-emitter on voltage
IC=3A ; VCE=4V
2.0
V
ICBO
Collector cut-off current
VCB=100V; IE=0
10
µA
IEBO
Emitter cut-off current
VEB=6V; IC=0
10
µA
hFE
DC current gain
IC=2.5A ; VCE=3V
Transition frequency
IC=0.5A ; VCE=10V
VCEsat
fT
CONDITIONS
2
MIN
TYP.
50
MAX
UNIT
240
70
MHz
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)
3
2SC2361