SavantIC Semiconductor Product Specification MJ2955 Silicon PNP Power Transistors DESCRIPTION ·With TO-3 package ·Complement to type MJ2955 ·DC current gain -hFE = 20–70 @ IC = 4 Adc ·Excellent safe operating area APPLICATIONS ·Designed for general–purpose switching and amplifier applications. PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -100 V VCEO Collector-emitter voltage Open base -60 V VEBO Emitter-base voltage Open collector -7 V IC Collector current -15 A IB Base current -7 A PC Collector power dissipation 115 W Tj Junction temperature 150 Tstg Storage temperature -65~200 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.52 UNIT /W SavantIC Semiconductor Product Specification MJ2955 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=-0.2A ;IB=0 -60 V VCER(SUS) Collector-emitter sustaining voltage IC=-0.2A ;RBE=100Ohm -70 V VCE(sat)-1 Collector-emitter saturation voltage IC=-4A; IB=-0.4A -1.1 V VCE(sat)-2 Collector-emitter saturation voltage IC=-10A ;IB=-3.3A -3.0 V VBE Base-emitter on voltage IC=-4A ; VCE=-4V -1.5 V ICEO Collector cut-off current VCE=-30V; IB=0 -0.7 mA ICEX Collector cut-off current VCE=-100V; VBE(off)=-1.5V TC=150 -1.0 -5.0 mA IEBO Emitter cut-off current VEB=-7V; IC=0 -5.0 mA hFE-1 DC current gain IC=-4A ; VCE=-4V 20 hFE-2 DC current gain IC=-10A ; VCE=-4V 5.0 Second breakdown collector current With base forward biased VCE=-40Vdc,t=1.0s, Nonrepetitive -2.87 A Transition frequency IC=-0.5A ; VCE=-10V 2.5 MHz Is/b fT 2 70 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 MJ2955