SAVANTIC 2N3235

SavantIC Semiconductor
Product Specification
2N3235
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·Excellent safe operating area
·Low collector saturation voltage
APPLICATIONS
·Designed for general–purpose switching
and amplifier applications.
PINNING
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
ABSOLUTE MAXIMUM RATINGS(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
65
V
VCEO
Collector-emitter voltage
Open base
55
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current
15
A
IB
Base current
7
A
PC
Collector power dissipation
115
W
Tj
Junction temperature
150
Tstg
Storage temperature
-65~200
TC=25
THERMAL CHARACTERISTICS
SYMBOL
R(th) jc
PARAMETER
Thermal resistance junction to case
VALUE
1.52
UNIT
/W
SavantIC Semiconductor
Product Specification
2N3235
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.2A ;IB=0
VCE(sat)-1
Collector-emitter saturation voltage
IC=4A ;IB=0.4A
1.1
V
VCE(sat)-2
Collector-emitter saturation voltage
IC=10A ;IB=3.3A
3.0
V
VBE(on)
Base-emitter on voltage
IC=5A ; VCE=5V
1.5
V
ICEO
Collector cut-off current
VCE=30V; IB=0
0.7
mA
ICBO
Collector cut-off current
VCB=65V; IE=0
0.1
mA
IEBO
Emitter cut-off current
VEB=7V; IC=0
0.1
mA
hFE-1
DC current gain
IC=5A ; VCE=5V
20
hFE-2
DC current gain
IC=10A ; VCE=5V
5
2
55
UNIT
V
70
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
2N3235